AB806062 Dell 32GB DDR4-3200MHz SDRAM ECC UDIMM Memory Kit
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Key Features of Dell AB806062 32GB Memory Module
This Dell 32GB DDR4 SDRAM memory module, with a bus speed of 3200MT/s, is designed to offer high performance and reliability for your server and workstation needs. Offering an ideal blend of power efficiency and speed, it ensures seamless multitasking and optimal performance in compatible systems.
General Information
- Brand Name: Dell
- Part Number: AB806062
- Product Type: 32GB DDR4 Memory Module
Technical Information
- Capacity: 32 Gigabytes
- Technology Type: DDR4 SDRAM
- Module Count: Single 32GB Stick
- Transfer Rate: 3200 MT/s (PC4-25600)
- Error Correction: ECC Enabled
- Buffering: Unbuffered Signal Flow
- Rank Configuration: 2Rx8 Layout
- Latency Timing: CL22
Physical Design & Dimensions
- Interface Type: 288-Pin UDIMM
- Size Metrics: 0.5 x 2 x 8 Inches
System Compatibility Matrix
Supported Dell Server Platforms
- PowerEdge R250 Rack Server
- PowerEdge R350 Rack Server
- PowerEdge T150 Tower Server
- PowerEdge T350 Tower Server
Precision Workstation Integration
- Precision 3640 Tower Workstation
- Precision 3640XE Tower Workstation
Ideal Use Cases
- Enterprise-grade memory upgrades
- High-speed data processing environments
- ECC-reliant server workloads
- Precision computing and CAD applications
Dell AB806062 32GB DDR4 Memory Module
Key Specifications
The Dell AB806062 features a substantial 32GB memory capacity on a single module, configured as 1x32GB. This high-density design allows for maximum memory expansion potential while minimizing slot usage. The module utilizes a 2Rx8 (2 Rank x8) organization, which provides optimal performance characteristics for server and workstation applications. This configuration balances memory access efficiency with power consumption, making it suitable for systems requiring reliable, high-capacity memory solutions.
Performance Specifications
Operating at 3200MT/s (MegaTransfers per second), this memory module delivers PC4-25600 data transfer rates, ensuring high-speed data processing capabilities. The module maintains a CAS Latency of CL22, which represents the number of clock cycles between a read command and data availability. While this latency is optimized for stability and reliability in enterprise environments, it provides excellent performance for memory-intensive applications when combined with the high transfer rate.
Voltage and Power Management
This DDR4 module operates at a standard 1.1V, which represents a significant power efficiency improvement over previous DDR3 generations. The reduced voltage not only decreases overall system power consumption but also minimizes heat generation, contributing to better system stability and longevity. The module incorporates advanced power management features that automatically adjust power states based on system demands, providing optimal energy efficiency during both idle and active states.
ECC Functionality
The Error Correcting Code (ECC) capability is a critical feature of this memory module, designed to detect and correct single-bit memory errors automatically. This hardware-level error correction significantly enhances system reliability by preventing data corruption and system crashes caused by memory errors. The ECC implementation works transparently to the operating system and applications, providing an additional layer of data integrity protection essential for critical computing tasks and server environments.
Physical Design
Module Form Factor
As an Unbuffered DIMM (UDIMM), this memory module provides direct electrical connection between the memory controller and DRAM chips without intermediate buffering. This architecture offers lower latency compared to registered (RDIMM) or load-reduced (LRDIMM) modules, making it ideal for workstations and entry-level servers where performance latency is crucial. The unbuffered design ensures compatibility with a wide range of systems that support standard DDR4 UDIMM configurations.
288-Pin Configuration
The module features the standard 288-pin layout specified for DDR4 UDIMMs, with a carefully engineered pin arrangement that ensures proper signal integrity and reliable connectivity. The pin configuration includes separate address and command buses, data lines, and power delivery pins, all designed to maintain signal quality at high operating frequencies. The physical notch position prevents incorrect installation in incompatible memory slots, serving as a keying mechanism for proper orientation.
Dell System Integration
Specifically engineered for Dell systems, the AB806062 module undergoes rigorous compatibility testing to ensure seamless operation in supported Dell platforms. The module contains optimized SPD (Serial Presence Detect) programming that provides the system BIOS with exact timing parameters and configuration data specific to DELL's hardware architecture. This ensures that the memory operates at its rated specifications while maintaining system stability and reliability.
Performance Characteristics
Speed and Bandwidth Capabilities
With a peak theoretical bandwidth of 25,600 MB/s (PC4-25600), this memory module can handle substantial data throughput requirements. The 3200MT/s operating frequency, combined with the 64-bit data bus width, enables efficient processing of large datasets and memory-intensive applications. The module's performance characteristics make it well-suited for virtualization, database applications, scientific computing, and other memory-demanding workloads.
Memory Timing Parameters
The module operates with JEDEC-standard timing parameters of CL22-22-22 at its rated speed of 3200MT/s. These timings represent the primary latency characteristics: CAS Latency (CL), Row Address to Column Address Delay (tRCD), and Row Precharge Time (tRP). While these timings are slightly relaxed compared to gaming-oriented memory, they are optimized for stability and reliability in professional and enterprise environments where continuous operation is paramount.
Reliability Features
Error Correction Implementation
The ECC functionality implements single-error correction and double-error detection (SEC-DED) using additional DRAM chips that store parity information. This architecture can automatically correct single-bit errors that occur during memory operations and detect double-bit errors, preventing silent data corruption. The error correction occurs in real-time without performance penalties, ensuring data integrity while maintaining full memory bandwidth.
Application Scenarios
Professional Workstation Use
For computer-aided design and manufacturing applications, the Dell AB806062 provides the necessary memory capacity and reliability for handling complex 3D models and simulations. The ECC protection ensures calculation accuracy in finite element analysis and computational fluid dynamics, while the 32GB capacity per module allows for working with large assemblies without frequent data swapping to storage drives.
Server and Data Center Applications
In virtualized environments, this memory module supports running multiple virtual machines simultaneously by providing substantial memory resources. The ECC functionality is particularly valuable in virtualization scenarios where memory errors could affect multiple guest operating systems. The module's reliability characteristics make it suitable for hypervisors that require continuous uptime and data integrity.
Database Servers
Database applications benefit from the combination of high capacity and ECC protection, as in-memory databases and large buffer pools require both substantial memory resources and data integrity. The 3200MT/s speed helps reduce query response times, while the error correction ensures database consistency and prevents corruption of critical business data.
DDR4 SDRAM Technology
This module utilizes Double Data Rate 4 Synchronous Dynamic Random Access Memory (DDR4 SDRAM) technology, which represents the fourth generation of DDR memory. Key advancements include higher data rates, improved power efficiency, and enhanced signal integrity compared to previous generations. The DDR4 architecture features bank groups that allow for improved efficiency in memory access patterns, contributing to overall system performance.
Signal Integrity Features
The module incorporates several DDR4-specific features to maintain signal integrity at high speeds, including Data Bus Inversion (DBI) which reduces power consumption and simultaneous switching noise, and programmable write-leveling and CA training to compensate for signal timing variations. These features ensure reliable operation at the 3200MT/s data rate while maintaining compatibility with the memory controller's requirements.
