MTA18ASF4G72AZ-3G2F1R Micron 32GB DDR4 SDRAM Ecc Reg Ram

Overview of Micron MTA18ASF4G72AZ-3G2F1R 32GB Memory

This advanced 32GB DDR4 SDRAM memory module is designed to deliver stable performance, consistent speed, and enterprise-level reliability. Built with premium-grade components, it is suitable for servers, workstations, and data-intensive computing environments that require dependable memory operations.This memory solution offers ample capacity and scalability for professional systems. It supports efficient multitasking and optimized data handling across demanding applications.

General Information

• Brand: Micron
• Manufacturer Part Number: MTA18ASF4G72AZ-3G2F1R
• Product Type: Memory Module

Technical Specifications

• Total Memory Size: 32GB
• Rank Structure: Dual Rank (2Rx8)
• Memory Speed: 3200MHz
• Bus Rating: DDR4-25600 / PC4-3200
• CAS Latency: CL22
• Signal Type: Registered (RDIMM)

Form Factor Details

• Memory Form Factor: 288-Pin RDIMM
• Build Quality: Durable PCB with precision engineering

Shipping and Packaging Specifications

• Shipping Height: 1.00 inch
• Shipping Depth: 6.75 inches
• Shipping Weight: 0.20 lb

The Micron 32GB 3200Mhz PC4-25600 DDR4 Memory Module

The Micron MTA18ASF4G72AZ-3G2F1R 32GB DDR4 ECC Registered memory module belongs to a high-performance enterprise memory category engineered specifically for mission-critical computing environments. This category focuses on reliability, scalability, and consistent throughput for servers, data centers, and professional workstations that demand uninterrupted uptime and deterministic performance. Built on advanced DDR4 SDRAM technology, ECC Registered modules are designed to reduce system-level instability while supporting higher memory densities per channel.

Error Correcting Code (ECC)

ECC memory technology is central to this category, offering automatic detection and correction of single-bit memory errors while identifying multi-bit errors. In enterprise environments where data integrity is paramount, ECC memory helps prevent silent data corruption that could otherwise compromise system operations, application accuracy, or stored datasets. This feature is especially vital in workloads involving financial transactions, scientific simulations, healthcare systems, and large-scale analytics.The ECC mechanism operates transparently at the hardware level, ensuring that corrected errors do not impact system performance or require software intervention. By minimizing the risk of memory-related crashes and corrupted outputs, ECC Registered DDR4 modules enhance system stability and long-term operational reliability, making them the preferred choice for professional-grade computing systems.

Registered DIMM Memory

Registered memory modules include an onboard register that buffers command and address signals before they reach the DRAM chips. This design significantly improves signal timing and reduces electrical stress on the CPU’s memory controller. As a result, systems can support larger memory footprints with improved consistency across all populated DIMM slots.For platforms that rely on multi-socket CPUs and high DIMM densities, registered memory ensures predictable behavior under sustained workloads. This category is commonly deployed in rack-mounted servers, blade servers, and enterprise workstations where scalability and fault tolerance are non-negotiable requirements.

High-Capacity 32GB Module Advantages

A 32GB DDR4 ECC Registered memory module offers a balance between capacity and performance, enabling system architects to design memory configurations that scale efficiently without excessive DIMM counts. Higher-capacity modules reduce the total number of installed DIMMs, improving airflow, lowering power consumption, and simplifying maintenance while maintaining optimal memory bandwidth.In virtualization environments, 32GB modules allow administrators to allocate sufficient memory resources to multiple virtual machines without contention. This capacity also supports in-memory databases, large caching layers, and advanced analytics workloads that benefit from fast, low-latency access to substantial memory pools.

Dual Rank Configuration Benefits

Dual-rank memory configurations improve overall memory throughput by allowing the memory controller to interleave access across multiple ranks. This design can enhance performance in multi-threaded workloads and memory-intensive applications. The dual-rank layout contributes to better utilization of the memory bus, especially in systems designed to maximize parallel processing efficiency.In enterprise-class systems, dual-rank RDIMMs provide a performance advantage without sacrificing reliability, making them a popular choice for balanced system configurations.

DDR4 3200MHz Performance

Operating at 3200MHz with a PC4-25600 bandwidth rating, this DDR4 memory category delivers high data transfer rates suitable for modern CPU architectures. The increased frequency compared to earlier DDR generations enables faster access to critical data structures, reducing bottlenecks in memory-intensive workloads.DDR4 technology also introduces improvements in bank grouping and burst length efficiency, allowing more effective handling of concurrent memory requests. These enhancements translate into measurable gains in application responsiveness and system throughput, particularly under heavy multitasking conditions.

CAS Latency 22 Timing Memory

CAS latency (CL22) represents a balanced timing configuration optimized for stability and compatibility in enterprise systems. While lower latency is often associated with consumer performance tuning, server environments prioritize predictable behavior, compatibility, and thermal efficiency. CL22 timings ensure reliable operation at 3200MHz across a wide range of supported platforms.This timing profile supports sustained workloads without introducing excessive power draw or thermal stress, contributing to long-term system reliability and reduced operational costs.

Memory Bandwidth Optimization

The PC4-25600 specification indicates a theoretical maximum bandwidth of 25.6GB/s per module. When deployed in multi-channel configurations, systems can achieve substantial aggregate memory bandwidth, supporting data-intensive workloads such as real-time analytics, machine learning inference, and large-scale transactional processing.Efficient memory bandwidth utilization ensures that CPUs remain fed with data, minimizing idle cycles and maximizing overall system efficiency.

Thermal Efficiency and Power Management

Operating at a nominal voltage of 1.2V, DDR4 memory delivers improved power efficiency compared to earlier DDR generations. Lower operating voltage reduces overall system power consumption and heat generation, contributing to more efficient cooling strategies in dense server environments.Thermal efficiency is a key consideration in data centers where power usage effectiveness (PUE) directly impacts operational costs. DDR4 ECC Registered memory supports these efficiency goals while maintaining high performance levels.

Compatibility with Modern Servers

This category of ECC Registered DDR4 memory is compatible with a wide range of contemporary server and workstation platforms that support RDIMM configurations. It is commonly deployed in systems utilizing multi-core, multi-socket CPUs where memory scalability and reliability are essential.Support for large memory capacities per system enables advanced configurations for virtualization, containerization, and distributed computing environments.

Scalability and Future-Proofing

Investing in high-capacity DDR4 ECC Registered memory supports scalable system designs that can adapt to growing workload demands. By enabling higher memory densities per channel, organizations can extend the usable lifespan of existing hardware platforms.Scalability is essential for evolving enterprise environments where data growth and application complexity continue to increase.