Samsung 128GB M386AAG40MMB-CVFBQ 2933MHz DDR4 ECC Lrdimm Memory Module

Samsung M386AAG40MMB-CVFBQ 128GB DDR4 SDRAM Memory Module

Memory Module Specifications

• Brand: Samsung
• Part Number: M386AAG40MMB-CVFBQ
• Type: DDR4 SDRAM Memory
• Storage Capacity: 128GB
• Form Factor: 288-pin LRDIMM
• Voltage: 1.2V

Performance and Efficiency

• Memory Speed: 2933 Mbps (PC4-23400)
• CAS Latency: CL21 for responsive multitasking
• Data Integrity: ECC (Error-Correcting Code) ensures reliable performance
• Signal Processing: Registered memory for improved data handling
• Memory Ranks: Quad Rank (4Rx4) for better memory density and efficiency

Advanced DDR4 Technology

• DDR4 Memory Technology: Latest generation DDR4 for faster data access
• Higher Bandwidth: Supports high-frequency data transfer at 2933 Mbps
• Power Efficiency: Operates at a low 1.2V for energy savings

ECC Registered Features

• Error Correction: ECC ensures minimal data corruption
• Registered Signal Processing: Enhances signal integrity and stability

Physical Characteristics

• Module Form Factor: 288-pin LRDIMM
• Dimensions: 1.00 inches (H) x 6.75 inches (D)
• Shipping Weight: 0.20 lbs

Key Benefits

• High Capacity: 128GB of storage for demanding workloads
• Optimized for Servers: Suitable for data centers and enterprise-level applications
• Improved Performance: Quad Rank design boosts overall system efficiency

Capacity: 128GB

The Benefits of a High Capacity Memory Module

The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM is a powerful memory module that offers an impressive capacity of 128GB. This high capacity makes it ideal for users who require a large amount of memory to handle demanding tasks and applications.

One of the main benefits of a high capacity memory module is the ability to run multiple applications simultaneously without experiencing any lag or slowdown. With 128GB of memory, you can easily run resource-intensive software such as virtual machines, video editing software, or complex simulations without any performance issues. This capability is particularly important for professionals in fields like graphic design, engineering, and data analysis, who often need to handle large datasets and perform complex calculations.

Improved Multitasking and Productivity

In addition to handling resource-intensive tasks, a high capacity memory module like the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM also enables smooth multitasking. With 128GB of memory, you can have multiple applications open at the same time and switch between them effortlessly. This is especially beneficial for professionals who need to work with several software tools concurrently or for gamers who want to have multiple games running simultaneously.

Moreover, a high capacity memory module contributes to increased productivity by reducing the time spent waiting for applications to load or data to be processed. With 128GB of memory, you can store large files and datasets directly in the RAM, allowing for faster access and retrieval. This means that tasks that involve working with large files or databases can be completed more quickly, saving valuable time and enabling you to focus on other important tasks.

Speed: 2933MHz

The Importance of High Speed Memory

The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM is not only impressive in terms of capacity but also in terms of speed, boasting a clock speed of 2933MHz. This high speed is crucial for achieving optimal system performance and responsiveness.

Faster Data Processing and Application Performance

High-speed memory enables faster data processing, allowing your computer to handle data more efficiently and reducing the time it takes to execute commands. With a clock speed of 2933MHz, the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM ensures that data transfer between the memory module and the CPU is lightning-fast, resulting in improved overall system performance.

In addition to faster data processing, high-speed memory also enhances application performance. With 2933MHz memory, applications load more quickly, respond faster to user input, and run smoother overall. This is especially important for gamers who want to achieve a seamless gaming experience with minimal lag or delay.

Optimized for Multithreaded Workloads

Another advantage of high-speed memory is its ability to handle multithreaded workloads more efficiently. Multithreaded applications make use of multiple threads or processes simultaneously, and high-speed memory ensures that each thread receives the necessary data and instructions in a timely manner. This results in improved performance and responsiveness when running applications that make use of multiple cores or threads.

Overall, the high speed of the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM contributes to improved system performance, faster data processing, enhanced application performance, and optimized handling of multithreaded workloads.

Rank: Quad Rank

The Significance of Quad Rank Memory

The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM is a quad rank memory module, which offers several benefits in terms of system performance and scalability.

Improved Memory Performance

Quad rank memory provides improved memory performance compared to single or dual rank modules. With four ranks, the memory module can handle more simultaneous data accesses, resulting in faster data retrieval and overall improved system performance. This is particularly advantageous for applications that require high data transfer rates, such as virtualization, big data analytics, and database management systems.

Enhanced Scalability

Quad rank memory also offers enhanced scalability, allowing for greater memory capacity in systems that support multiple memory channels. By utilizing quad rank modules, you can achieve higher total memory capacity without sacrificing performance. This is especially beneficial for servers and workstations that require large amounts of memory to handle demanding workloads.

Compatibility Considerations

It's important to note that quad rank memory modules may have compatibility limitations with certain motherboards or processors. Before purchasing the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM or any quad rank memory module, it's advisable to check your system specifications and ensure compatibility with your existing hardware.

Voltage: 1.2v

The Advantages of Low Voltage Memory

The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM operates at a low voltage of 1.2v, offering several advantages in terms of energy efficiency, heat generation, and system stability.

Energy Efficiency

Low voltage memory modules consume less power compared to higher voltage alternatives. This results in reduced energy consumption and lower operating costs, making it an environmentally friendly choice. Additionally, low voltage memory contributes to longer battery life in laptops and other portable devices.

Heat Generation and System Stability

Low voltage memory generates less heat during operation, which helps maintain system stability and prevents overheating issues. Excessive heat can lead to system slowdowns, crashes, or even hardware damage. By utilizing low voltage memory like the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM, you can ensure that your system runs cool and stable even during demanding tasks.

Compatibility with DDR4 Standards

The 1.2v voltage of the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM is compliant with DDR4 memory standards. This ensures compatibility with a wide range of DDR4-enabled systems, including desktop computers, servers, and workstations.

Form Factor: 288-pin Lrdimm

The Importance of the 288-pin Lrdimm Form Factor

The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM features a 288-pin Lrdimm form factor, which offers several benefits in terms of compatibility, performance, and expandability.

Compatibility with DDR4 Systems

The 288-pin Lrdimm form factor is designed specifically for DDR4 memory modules. This ensures compatibility with DDR4-enabled systems, allowing for easy installation and integration into a wide range of desktop computers, servers, and workstations.

Performance Advantages

Compared to other form factors, such as UDIMM (Unbuffered DIMM) or SODIMM (Small Outline DIMM), the 288-pin Lrdimm form factor provides better performance. The presence of a register on the module helps reduce electrical load on the memory controller, resulting in improved signal integrity and overall system performance.

Expandability and Future Upgrades

The 288-pin Lrdimm form factor allows for greater memory capacity and expandability compared to other form factors. By utilizing this form factor, you can easily add more memory modules to your system, increasing its overall capacity and performance. This is particularly important for servers and workstations that require large amounts of memory to handle intensive workloads.

ECC: ECC Registered

The Significance of ECC Registered Memory

The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM features ECC (Error Correction Code) registered memory, offering several advantages in terms of data integrity, system stability, and error detection.

Data Integrity and Error Detection

ECC registered memory uses advanced error correction techniques to detect and correct single-bit errors in real-time. This ensures that data stored in the memory remains accurate and reliable, even in the presence of occasional errors. By utilizing ECC registered memory like the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM, you can significantly reduce the risk of data corruption or loss, which is especially important for critical applications that handle sensitive or valuable data.

System Stability and Reliability

ECC registered memory also contributes to system stability and reliability. By detecting and correcting errors before they can cause system crashes or data corruption, ECC memory helps prevent unexpected downtime and ensures that your system remains operational even under heavy workloads.

Performance Considerations

It's worth noting that ECC registered memory may have a slight impact on performance compared to non-ECC memory due to the additional processing required for error detection and correction. However, the benefits of data integrity and system stability provided by ECC registered memory outweigh the minimal performance impact, making it a preferred choice for mission-critical systems.

Cas Latency: CL21

The Significance of Cas Latency

The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM features a CAS (Column Address Strobe) latency of CL21, which is an important parameter that affects memory performance and responsiveness.

Memory Access Speed

CAS latency measures the number of clock cycles required for the memory module to respond to a command and provide the requested data. A lower CAS latency results in faster memory access speed, which contributes to improved overall system performance and responsiveness. With a CL21 CAS latency, the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM offers quick response times and efficient data retrieval.

Compatibility Considerations

It's important to consider compatibility when selecting memory modules with specific CAS latency values. Some motherboards or processors may have limitations or requirements regarding CAS latency. Before purchasing the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM or any memory module, it's advisable to check your system specifications and ensure compatibility with your existing hardware.

Usage: Server

The Importance of Server Memory

The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM is specifically designed for server usage, offering several advantages in terms of performance, reliability, and scalability.

Enhanced Performance for Server Workloads

Server memory modules are optimized to handle demanding workloads and applications that are commonly found in server environments. The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM, with its high capacity, high speed, and low latency, is capable of delivering the performance required to support critical server operations such as virtualization, database management, and cloud computing.

Reliability and Data Integrity

Server memory modules, including the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM, undergo rigorous testing and validation processes to ensure their reliability and data integrity. They are built to withstand the demanding conditions of server environments, where uninterrupted operation is crucial. ECC (Error Correction Code) registered memory further enhances data integrity by detecting and correcting errors in real-time.

Scalability and Expandability

Server memory needs to be highly scalable to accommodate the growing demands of expanding server infrastructures. The Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM, with its quad rank design and compatibility with multiple memory channels, allows for easy expansion and increased memory capacity. This enables servers to handle larger workloads and support more users without sacrificing performance.

Overall, the Samsung M386AAG40MMB-CVFBQ DDR4 SDRAM is an ideal choice for server usage, offering exceptional performance, reliability, scalability, and data integrity necessary for critical server operations.