M393AAG40M32-CAECO Samsung 128GB DDR4 SDRAM 3200MHz Pc4-25600 Ecc Rdimm

Samsung M393AAG40M32-CAECO 128GB Memory Kit

The Samsung M393AAG40M32-CAECO represents the pinnacle of high-capacity, high-reliability memory engineering for enterprise server environments. As a 128GB DDR4 Registered ECC RDIMM, this module is engineered to deliver exceptional data integrity, stability, and performance in mission-critical applications such as in-memory databases, virtualization, high-performance computing (HPC), and large-scale cloud infrastructure. Its design prioritizes flawless operation under continuous load, making it an essential component for IT administrators and system builders who demand uncompromising reliability from their server hardware.

Key Specifications

At its core, the Samsung M393AAG40M32-CAECO is defined by a precise set of technical parameters that dictate its compatibility and performance profile. This module is not a standard consumer-grade component; every specification is tailored for server deployment.

Primary Product Attributes

The module's identity is captured in its full part number and key attributes. The "M393AAG40M32-CAECO" code follows Samsung's detailed naming convention, indicating its server-grade (M393) nature, its 128GB capacity, and its performance characteristics. It is a single, monolithic 128GB module, allowing for immense memory configurations in multi-channel server platforms. The form factor is a standard 288-pin RDIMM (Registered Dual In-line Memory Module), which is the physical and electrical interface for server motherboards. It operates at a JEDEC-standard voltage of 1.2 volts, balancing performance with power efficiency, a critical consideration in dense server racks where thermal output and energy consumption are directly tied to operational costs.

Detailed M393AAG40M32-CAECO Memory Module

Decoding the part number reveals its lineage: 'M393' signifies a DDR4 server DRAM module. 'AAG40M32' details the specific density, organization, and component configuration. The suffix '-CAECO' is a critical revision and specification code, where 'C' indicates a CAS Latency of 22, 'AE' denotes the 3200MHz speed grade, and 'CO' specifies the quad-rank, x4 device architecture with ECC. This precise coding ensures accurate matching for compatible systems and upgrade paths.

Performance Parameters: Speed and Latency

Performance in server memory is a balance of raw bandwidth and consistent responsiveness. This module operates at a data rate of 3200 Megatransfers per second (MT/s), which is marketed as PC4-25600. The "PC4" denotes DDR4, and the "25600" refers to the peak theoretical bandwidth in megabytes per second (MB/s) for the module (3200 MHz * 8 bytes = 25,600 MB/s). The CAS Latency (CL) is 22 cycles, a typical latency for high-capacity, high-speed server modules where stability and capacity are often prioritized over ultra-tight timings. This 3200MHz CL22 combination provides an optimal blend of high throughput for data-intensive tasks and reliable command execution.

Advanced Memory Architecture for Server Stability

The true value of the Samsung M393AAG40M32-CAECO lies in its advanced architectural features, which are non-negotiable for enterprise stability. These features work in concert to prevent data corruption, manage electrical load, and ensure seamless communication with the server's memory controller.

ECC (Error-Correcting Code) Functionality

ECC is a fundamental requirement for any server handling valuable or computational data. Unlike non-ECC memory, which can only detect errors, this module's ECC circuitry can both detect and correct single-bit errors on the fly. It can also detect (but not correct) multi-bit errors, alerting the system to a serious fault. This "self-healing" capability is crucial for preventing silent data corruption, system crashes, and computational errors in applications like financial transactions, scientific modeling, and database management, where data integrity is paramount.

Registered (Buffered) Design

The "Registered" or "Buffered" aspect of this RDIMM is what enables its high capacity and stability in multi-module configurations. A register (or buffer) is placed on the module to buffer the address and command signals from the server's memory controller. This reduces the electrical load on the controller, allowing it to support more memory modules per channel—often four or more RDIMMs compared to just one or two unbuffered DIMMs. This buffering introduces a slight latency penalty (typically one clock cycle) but is essential for achieving large total system memory capacities, such as 1TB, 2TB, or more in a single server.

Quad Rank and x4 Device Organization

The terms "Quad Rank" and "x4" refer to the internal organization of the DRAM chips on the module. A "rank" is a set of DRAM chips that work together to provide a full data width (72 bits for an ECC RDIMM, including 64 data bits and 8 ECC bits). A Quad Rank module has four such sets of chips, which are accessed independently. This organization allows for a very high 128GB capacity on a single module. The "x4" refers to the data width of the individual DRAM chips (4 bits). x4 chips are essential for advanced ECC schemes like SDDC (Single Device Data Correction), which can correct errors even if an entire DRAM chip fails, providing chipkill-level protection. This architecture offers superior reliability compared to modules built with x8 chips.

Compatibility and Deployment Scenarios

Deploying high-capacity server memory requires meticulous attention to compatibility. The Samsung M393AAG40M32-CAECO is not a universal fit; it is designed for specific server platforms that support its combination of features.

Target Server Platforms

This module is engineered for modern enterprise servers based on Intel Xeon Scalable processors (Cascade Lake, Cooper Lake, Ice Lake, and newer generations) and AMD EPYC 7002 (Rome), 7003 (Milan), and 7004 (Genoa) series processors. These platforms officially support 3200MHz DDR4 memory with Registered ECC and the large capacities per module. It is critical to consult the server manufacturer's (Dell, HPE, Lenovo, Supermicro, etc.) memory qualified vendors list (QVL) to confirm this specific part number or its direct equivalent is validated for a given motherboard or system model. Using non-qualified memory can lead to boot failure, reduced performance, or instability.

Memory Channel

Server memory configuration follows strict rules outlined in the system manual. Key considerations include: populating channels symmetrically (e.g., same number and type of modules per channel), following the recommended slot population order (often starting with slots furthest from the CPU), and being aware of speed limitations when all slots are populated. For example, a system running eight 128GB Quad Rank modules per CPU may clock the memory down from 3200MHz to 2933MHz or 2666MHz to maintain signal integrity. Understanding these trade-offs between total capacity and operating speed is essential for optimal system tuning.

Applications and Benefits in Enterprise Workloads

The substantial investment in memory like the Samsung M393AAG40M32-CAECO is justified by its transformative impact on specific high-value server workloads.

In-Memory Databases and Real-Time Analytics

Platforms like SAP HANA, Oracle Database In-Memory, and Microsoft SQL Server Hekaton thrive on massive, fast memory pools. Storing entire databases in RAM eliminates storage I/O bottlenecks, enabling real-time transaction processing and analytics at unprecedented speeds. The 128GB capacity per module allows for building multi-terabyte in-memory systems efficiently, while ECC ensures the data remains uncorrupted.

High-Density Virtualization and Cloud Infrastructure

Server virtualization hypervisors (VMware vSphere, Microsoft Hyper-V, KVM) are fundamentally memory-bound. The more RAM available, the more virtual machines (VMs) a single physical host can run concurrently. A single 128GB module dramatically increases VM density, improving consolidation ratios and reducing hardware, power, and cooling costs in data centers and private clouds. The reliability features minimize the risk of host failure due to memory errors.

High-Performance Computing (HPC)

Computational workloads in fields like computational fluid dynamics, genomic sequencing, and financial modeling often work with enormous datasets that must be held in memory during computation. The high bandwidth (PC4-25600) of these modules accelerates data access for CPUs, reducing compute time. ECC is particularly critical here, as a single flipped bit in a multi-day simulation could render the results invalid without any warning.

On-Die ECC and Advanced PMIC

Many modern Samsung server DRAM chips, like those likely used in this module, incorporate On-Die ECC. This is an additional layer of error correction within each individual DRAM chip, correcting internal errors before they are seen by the module-level ECC. This multi-tiered protection greatly enhances reliability. Furthermore, the module includes an advanced Power Management Integrated Circuit (PMIC), which provides precise, stable voltage regulation to the DRAM chips, improving power efficiency and signal integrity compared to older designs that relied on motherboard voltage regulation.