M393A8G40BB4-CWE Samsung 64GB DDR4 SDRAM 3200mhz Reg 288-Pin Ram
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Product Overview
The Samsung M393A8G40BB4-CWE is a high-performance memory module designed to enhance computing efficiency and reliability. This Memory module is ideal for both enterprise and high-demand computing environments.
General Information
- Manufacturer: Samsung
- Part Number: M393A8G40BB4-CWE
- Product Type: 64GB DDR4 SDRAM Memory Module
Technical Specifications
- Total Capacity: 64GB single‑module configuration
- Technology Standard: DDR4 SDRAM architecture
- Module Count: 1 × 64GB RDIMM
- Transfer Rate: 3200MT/s supporting DDR4‑3200 / PC4‑25600 bandwidth
- Error Correction: ECC functionality for enhanced data reliability
- Module Type: Registered DIMM for optimized signal stability
- Latency Rating: CL24 timing for balanced speed and responsiveness
- Rank Structure: Dual‑Rank x4 layout for improved multi‑threaded performance
Electrical & Operational Efficiency
- Operating Voltage: 1.2V for reduced power consumption
- Optimized for continuous server uptime and heavy workloads
Physical & Structural Design
- Built with a robust form factor, this module fits seamlessly into modern server platforms requiring RDIMM architecture.
Form Factor Details
- Interface Type: 288‑pin RDIMM
- Designed for enterprise‑grade server motherboards
- Precision‑engineered layout for consistent thermal and electrical performance
Ideal Use Cases
- High‑performance computing clusters
- Enterprise virtualization environments
- Database servers and analytics platforms
- Cloud infrastructure and scalable data centers
Memory Module Stands Out
- Reliable Samsung manufacturing quality
- High‑capacity module suitable for memory‑intensive operations
- ECC + Registered design ensures superior stability
- Fast 3200MT/s bandwidth for accelerated data processing
Samsung M393A8G40BB4-CWE 64GB Memory Module
At the heart of enterprise-level computing lies the critical component of system memory, where performance, reliability, and data integrity are non-negotiable. The Samsung M393A8G40BB4-CWE represents a pinnacle of server-grade memory technology. This 64GB module is engineered specifically for server and data center environments that demand unwavering stability under continuous, high-load operations. It is a Registered ECC Dual Rank DDR4 RDIMM, operating at a swift 3200 MT/s, designed to enhance the capabilities of modern multi-processor servers, high-performance computing (HPC) clusters, and mission-critical database applications.
Key Specifications
This section details the fundamental technical attributes that define the module's performance envelope and physical compatibility.
Capacity
The M393A8G40BB4-CWE provides a substantial 64 gigabytes (GB) of memory in a single module. This high-density design allows for maximum memory capacity per system slot, enabling servers to achieve terabytes of total RAM with fewer modules. The configuration is listed as 1x64GB, indicating it is sold as a single module. This high density is crucial for memory-intensive applications such as virtualization, in-memory databases (like SAP HANA), and large-scale data analytics, where maximizing capacity within physical slot constraints is paramount.
Speed & Bandwidth: PC4-25600 at 3200 Mbps
The module is rated at a data transfer rate of 3200 million transfers per second (MT/s), often expressed as 3200 Mbps. This speed correlates to a peak theoretical bandwidth of 25.6 GB/s per module, calculated as (3200 MT/s * 64-bit data bus) / 8 bits per byte. The industry-standard designation for this bandwidth is PC4-25600. Higher speed modules like this reduce bottlenecks in data movement between the CPU and memory, directly improving the performance of CPU-bound and memory-intensive workloads. It allows for faster caching of database queries, quicker rendering of complex models in engineering simulations, and smoother handling of concurrent virtual machines.
DDR4 Generation and Data Rate
This module belongs to the Double Data Rate 4 (DDR4) SDRAM generation. It operates at a data transfer rate of 3200 megatransfers per second (MT/s), often marketed as 3200MHz. This speed is specified as PC4-25600, where "PC4" denotes DDR4 and "25600" represents the peak bandwidth in megabytes per second (MB/s) for the module (64-bit data bus * 3200 MT/s / 8 ≈ 25600 MB/s). The 3200 MT/s rate offers a significant performance uplift over previous standard server speeds like 2666 MT/s or 2400 MT/s, resulting in faster data access for the CPU and reduced latency for memory-bound workloads.
CAS Latency and Timing: CL24
The specified CAS Latency (CL) is 24 at the 3200 Mbps speed. CAS Latency is the number of clock cycles between the memory controller issuing a read command and the first piece of data being available. In the context of a high-speed, high-density registered ECC module, a CL24 timing is standard and optimized for stability. While lower CL numbers indicate lower latency, in server environments, the emphasis is on a balance of high bandwidth, high capacity, and rock-solid reliability. The module's timings are programmed into its SPD (Serial Presence Detect) chip, allowing the server BIOS to automatically configure it correctly.
Dual Rank & x4 Organization
The module is specified as "Dual Rank" with a "x4" DRAM organization. A "rank" is an independent set of DRAM chips that the memory controller can access at one time. A dual-rank module has two such sets, which the controller can alternate between, allowing for modest latency-hiding and efficiency gains. The "x4" refers to the internal organization of the individual DRAM chips; they have a 4-bit data width. x4-based modules are essential for supporting advanced reliability features like **SDDC (Single Device Data Correction)**, also known as Chipkill, which can survive the complete failure of an entire DRAM chip. This makes them the preferred choice for mission-critical servers from OEMs like Dell, HPE, and Lenovo.
Module Type and Form Factor: 288-Pin RDIMM
The module utilizes a 288-pin Printed Circuit Board (PCB) layout, the standard physical interface for DDR4 memory. It is specifically an RDIMM (Registered Dual In-Line Memory Module). The "Registered" component indicates the presence of a register, or buffer, on the module that buffers the address and command signals between the memory controller and the DRAM chips. This reduces the electrical load on the controller, enabling more stable operation and supporting higher capacities per module and more modules per memory channel, which is essential for scalable server architectures.
Advanced Memory Technologies for Enterprise Stability
Beyond raw speed and capacity, this module incorporates specialized technologies that are the hallmark of true server-grade memory, distinguishing it from consumer-grade products.
Error Correction Code (ECC) Functionality
The M393A8G40BB4-CWE features ECC (Error-Correcting Code). ECC is a critical reliability feature that detects and corrects the most common types of internal data corruption. Single-bit errors are corrected on-the-fly, and multi-bit errors are detected. This hardware-level data integrity is indispensable for preventing silent data corruption, system crashes, and computational errors in financial modeling, scientific research, and long-term data storage servers. ECC ensures data accuracy and system uptime.
Dual Rank and x4 Organization
The module is designated as Dual Rank. A "rank" is a set of DRAM chips that work together to fill the module's 64-bit data width. A dual-rank module has two such sets, which the memory controller can access alternately, improving performance through bank interleaving. The "x4" organization refers to the data width of the individual DRAM chips used (4 bits). x4 chips, combined with a feature called Chipkill (a more advanced form of ECC supported by this architecture), allow the memory subsystem to survive a complete failure of a single DRAM chip, providing a level of resilience comparable to a hardware RAID for memory.
Power Efficiency
This DDR4 module operates at a nominal voltage of 1.2 volts (V), which is standard for DDR4 and represents a significant power efficiency improvement over DDR3's 1.5V. Lower voltage reduces overall power consumption and heat generation in the server chassis. The timing latency is specified as CL24 (CAS Latency 24). This number represents the number of clock cycles between a read command and data availability. While higher than some consumer modules, this timing is optimized for the stability and high-capacity demands of server environments at the 3200 MT/s speed, balancing latency with monumental throughput and reliability.
Target Applications and System Compatibility
This memory module is not designed for desktop PCs or workstations. Its purpose is to serve as the high-performance, reliable backbone in specific enterprise-grade hardware.
Server Platform Compatibility
The Samsung M393A8G40BB4-CWE is engineered for compatibility with modern server platforms from leading OEMs such as Dell EMC (PowerEdge series), HPE (ProLiant, Apollo), Lenovo (ThinkSystem), Cisco (UCS), and Supermicro. It is designed to work with Intel Xeon Scalable processors (e.g., 2nd Gen Ice Lake, 3rd Gen Cooper Lake) and compatible platforms that support DDR4-3200 Registered ECC RDIMMs. It is crucial to verify compatibility with the specific server model's Qualified Vendor List (QVL) or memory compatibility tool before integration, as BIOS and platform memory topologies vary.
Ideal Use Case Scenarios
This high-density, high-speed ECC RDIMM is ideal for numerous demanding server applications. It excels in virtualization hosts, where large pools of reliable RAM allow for running numerous virtual machines simultaneously. It is perfect for in-memory database servers, which load entire datasets into RAM for ultra-fast query processing. Other key applications include high-performance computing (HPC) for complex simulations, enterprise resource planning (ERP) systems, large-scale cloud infrastructure, and big data analytics platforms where processing vast datasets in real-time is required.
Memory Channel
For optimal performance, servers should be populated with memory modules in multiples that match the number of memory channels per processor. Modern server CPUs typically have six or eight memory channels. To leverage the full bandwidth of 3200 MT/s, modules should be installed in a balanced configuration across all channels, often starting with one module per channel. Using identical modules (same part number, capacity, speed, and rank) across all slots is strongly recommended to ensure system stability and achieve advertised performance levels.
