Samsung M386B4G70BM0-YH9 32GB 1333mhz PC3-10600 Quad Rank ECC CL9 Registered Low Voltage DDR3 SDRAM LR-DIMM
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M386B4G70BM0-YH9 | Six-Month (180 Days) | $28.00 | New (System) Pull | You save: $16.55 (37%) |
M386B4G70BM0-YH9 | Six-Month (180 Days) | $32.00 | Factory-Sealed New in Original Box (FSB) | You save: $46.30 (59%) |
Product Specifications
Samsung M386B4G70BM0-YH9 Overview
The Samsung M386B4G70BM0-YH9 is a high-performance 32GB DDR3 SDRAM memory module designed to elevate your computing experience. With its exceptional specifications and reliability, this memory module is ideal for demanding applications and multi-tasking environments.
Key Features
- Memory Type: DDR3 SDRAM
- Capacity: 32GB (1 x 32GB)
- Bus Speed: 1333 MT/s (DDR3-1333 / PC3-10600)
- Data Integrity: ECC (Error-Correcting Code)
- Signal Processing: Registered
- CAS Latency: CL19
- Rank: 4Rx4
Compatibility and Use Cases
Optimal Applications
This memory module is ideal for a variety of applications, including:
- High-performance computing tasks
- Virtualization and server environments
- Intensive gaming setups
- Data analysis and processing workloads
Capacity
The Samsung M386B4G70BM0-YH9 Memory Module is equipped with a massive capacity of 32GB. This high capacity allows users to store and access large amounts of data, ensuring smooth and efficient performance for various computing tasks. Whether you are a professional who needs to handle complex data analysis or a gamer looking for a seamless gaming experience, the 32GB capacity of this memory module is ideal.
Enhanced Multitasking
With 32GB of capacity, this memory module enables seamless multitasking. You can run multiple applications simultaneously without experiencing any lag or slowdown. The ample storage space allows you to switch between programs effortlessly, enhancing your productivity and efficiency.
Optimal Performance for Complex Applications
The 32GB capacity is particularly beneficial for professionals who work with resource-intensive applications such as video editing software, 3D modeling tools, or virtualization environments. These applications require a significant amount of memory to run smoothly, and the Samsung M386B4G70BM0-YH9 Memory Module provides the necessary capacity to ensure optimal performance.
Improved Gaming Experience
Gamers will also appreciate the 32GB capacity of this memory module. It allows for smooth gameplay and faster loading times, ensuring an immersive gaming experience. You can run graphics-intensive games without worrying about performance issues or crashes.
Speed
The Samsung M386B4G70BM0-YH9 Memory Module features a speed of 1333MHz. This high-speed capability enables faster data transfer rates, resulting in improved overall system performance.
Faster Data Processing
The 1333MHz speed ensures that data is processed quickly and efficiently. This is particularly important for tasks that involve large data sets or complex calculations. With faster data processing, you can save valuable time and accomplish tasks more efficiently.
Reduced Latency
A higher speed helps reduce latency, which is the delay between a command being issued and its execution. The reduced latency enhances system responsiveness, allowing for seamless multitasking and smoother operation of applications.
Enhanced Gaming Performance
Gamers will benefit from the 1333MHz speed as it allows for faster loading times and smoother gameplay. The high-speed capability ensures that games run smoothly, without any noticeable lag or stuttering.
Form Factor
The Samsung M386B4G70BM0-YH9 Memory Module has a form factor of 240-Pin. This form factor is widely used in desktop computers and provides several benefits in terms of compatibility and ease of installation.
Broad Compatibility
The 240-Pin form factor is compatible with a wide range of desktop motherboards, making it easy to integrate this memory module into your existing system. Whether you have a gaming rig or a professional workstation, you can be confident that this memory module will fit seamlessly into your setup.
Easy Installation
The 240-Pin form factor ensures simple and hassle-free installation. You can easily plug the memory module into the corresponding memory slot on your motherboard, without the need for any additional tools or complicated procedures.
Expandability
The 240-Pin form factor allows for easy expansion of your system's memory capacity. You can add additional memory modules to increase the overall RAM capacity, providing more headroom for demanding applications or future upgrades.
Rank
The Samsung M386B4G70BM0-YH9 Memory Module has a rank of Quad. The rank refers to the organization of memory modules within a single memory channel and plays a crucial role in optimizing memory performance.
Improved Memory Performance
The Quad rank configuration enhances memory performance by allowing for increased data transfer rates and improved stability. It enables better utilization of the memory channels, resulting in faster and more efficient data access.
Enhanced System Responsiveness
A Quad rank configuration helps reduce memory latency, resulting in improved system responsiveness. This is particularly important for tasks that require quick data retrieval or frequent access to large datasets.
Optimal Performance for Resource-Intensive Applications
The Quad rank configuration is especially beneficial for professionals who work with resource-intensive applications such as virtualization software or complex data analysis tools. It ensures that these applications can utilize the maximum memory bandwidth, resulting in optimal performance.
ECC
The Samsung M386B4G70BM0-YH9 Memory Module has an ECC (Error Correcting Code) feature with a value of 1. ECC is a vital technology that helps detect and correct errors in data stored in memory, ensuring data integrity and system stability.
Data Integrity
ECC technology detects and corrects both single-bit and multi-bit errors that may occur during data storage or transmission. By ensuring data integrity, ECC helps prevent data corruption or loss, which is crucial for critical applications that require accurate and reliable results.
System Stability
Errors in memory can lead to system crashes, freezes, or unpredictable behavior. The ECC feature of this memory module helps maintain system stability by preventing such errors from causing system failures. This is particularly important for servers, workstations, or any mission-critical systems.
Enhanced Reliability
The ECC feature enhances the overall reliability of your system by providing an extra layer of protection against memory-related errors. It helps reduce the risk of data corruption and ensures that your system operates smoothly and consistently.
Registered
The Samsung M386B4G70BM0-YH9 Memory Module has a registered feature with a value of 1. Registered memory, also known as buffered memory, offers several advantages in terms of stability, scalability, and performance.
Improved System Stability
Registered memory includes a register that acts as a buffer between the memory module and the memory controller. This buffer helps reduce electrical load and signal noise, resulting in improved system stability and reliability.
Scalability
The registered feature allows for better scalability by enabling the use of larger memory configurations. It helps overcome limitations in memory bus capacity, allowing for the installation of more memory modules without compromising system performance.
Enhanced Memory Performance
Registered memory improves memory performance by reducing electrical loading on the memory bus. This allows for higher clock speeds and faster data transfer rates, resulting in improved overall system performance.
Voltage
The Samsung M386B4G70BM0-YH9 Memory Module operates at a Low Voltage. This low voltage requirement offers several benefits in terms of energy efficiency, heat generation, and compatibility.
Energy Efficiency
A low voltage requirement translates into lower power consumption. This not only reduces energy costs but also contributes to environmental sustainability by minimizing your carbon footprint. The energy-efficient operation is particularly important for systems that run continuously or have high power demands.
Reduced Heat Generation
Low voltage operation helps reduce heat generation, resulting in cooler system temperatures. This is particularly beneficial for maintaining optimal performance and prolonging the lifespan of your system components.
Compatibility
The low voltage requirement of this memory module ensures compatibility with a wide range of systems, including those with strict power limitations. It allows for seamless integration into various computing environments without the need for additional power supply upgrades.
Technology
The Samsung M386B4G70BM0-YH9 Memory Module utilizes DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) technology. DDR3 SDRAM offers several advantages in terms of speed, bandwidth, and power efficiency.
High-Speed Data Transfer
DDR3 SDRAM provides faster data transfer rates compared to its predecessors. This enables quicker access to data stored in memory, resulting in improved overall system performance and responsiveness.
Increased Bandwidth
DDR3 SDRAM offers increased memory bandwidth, which allows for more data to be transferred simultaneously. This enhances multitasking capabilities and improves the performance of memory-intensive applications such as video editing or 3D rendering.
Power Efficiency
DDR3 SDRAM is designed to operate at lower voltages, reducing power consumption and heat generation. This results in improved energy efficiency and longer battery life for mobile devices.
Module Type
The Samsung M386B4G70BM0-YH9 Memory Module belongs to the LRDIMM (Load-Reduced Dual In-Line Memory Module) module type. LRDIMM offers several advantages in terms of memory capacity, data reliability, and overall system performance.
Increased Memory Capacity
LRDIMM modules have a higher memory capacity compared to their counterparts, allowing for larger memory configurations. This is particularly beneficial for high-performance computing applications or systems that require extensive memory resources.
Improved Data Reliability
LRDIMM technology reduces the electrical load on the memory bus, resulting in improved signal integrity and reduced data errors. This enhances data reliability and reduces the risk of data corruption or loss.
Enhanced System Performance
The load-reduced design of LRDIMM modules reduces electrical loading on the memory bus, allowing for higher clock speeds and faster data transfer rates. This translates into improved overall system performance and responsiveness.