Genuine Hynix 128GB DDR4 ECC Registered Quad Rank Lrdimm HMABAGL7MBR4N-XN

Capacity

The Hynix HMABAGL7MBR4N-XN DDR4 SDRAM is an exceptional memory module that offers a staggering capacity of 128GB. This remarkable feature sets it apart from other memory modules in the market and provides users with unparalleled benefits and advantages.

Unleash the Power of Multitasking

With a capacity of 128GB, this DDR4 SDRAM module allows users to effortlessly handle multiple tasks simultaneously without experiencing any lag or performance issues. Whether you are a professional video editor, a hardcore gamer, or someone who frequently works with resource-intensive applications, this memory module ensures smooth and efficient multitasking.

Seamless Gaming Experience

Gamers can rejoice with the Hynix HMABAGL7MBR4N-XN DDR4 SDRAM's impressive capacity. It allows you to run demanding games without worrying about memory limitations. Say goodbye to choppy frame rates and long loading times. This memory module ensures a seamless gaming experience, enabling you to fully immerse yourself in the virtual world.

Efficient Data Processing

For professionals working with large datasets or complex computational tasks, the 128GB capacity of this memory module is a game-changer. It enables faster data processing, reducing the time required for complex calculations and analysis. With enhanced efficiency, you can complete your work faster and improve productivity significantly.

Speed

Another standout feature of the Hynix HMABAGL7MBR4N-XN DDR4 SDRAM is its impressive speed of 3200MHz. This high-speed capability enhances overall system performance and ensures smooth operations even when dealing with demanding applications and processes.

Lightning-Fast Data Transfer

The 3200MHz speed of this memory module facilitates lightning-fast data transfer rates. It enables your system to quickly retrieve and store data, resulting in reduced loading times for applications and files. Whether you are accessing large media files or running memory-intensive software, the high speed ensures a seamless user experience.

Enhanced Responsiveness

The increased speed provided by this DDR4 SDRAM module translates to enhanced responsiveness. You can navigate through applications, switch between tasks, and open files with remarkable speed. This feature is particularly beneficial for professionals who work with multiple software simultaneously or individuals who require swift access to their data.

Improved Gaming Performance

Gamers will appreciate the 3200MHz speed of this memory module as it significantly improves gaming performance. The high-speed data transfer ensures quick loading of game assets, reduces input lag, and enhances overall gameplay fluidity. With this memory module, you can enjoy smoother graphics, faster frame rates, and a more immersive gaming experience.

Cas Latency

The Hynix HMABAGL7MBR4N-XN DDR4 SDRAM boasts a Cas Latency of CL22. This feature plays a crucial role in determining the response time of the memory module and contributes to the overall system performance.

Optimal Memory Access

Cas Latency refers to the time delay between a command being issued to the memory module and the beginning of a response from it. With a CL22 rating, this memory module ensures efficient memory access, minimizing delays and maximizing data throughput. This feature is especially important for tasks that require frequent read and write operations.

Seamless Operation with CPU

The CL22 Cas Latency of this DDR4 SDRAM module ensures harmonious operation with the CPU. It synchronizes the speed at which data is transferred between the CPU and memory module, eliminating any potential bottlenecks and optimizing overall system performance. This results in smoother operation, reduced latency, and improved productivity.

Stability and Reliability

A low Cas Latency is indicative of stable and reliable memory performance. By offering a CL22 rating, this memory module guarantees consistent and error-free data transmission. Whether you are working on critical projects, running resource-intensive software, or engaging in intense gaming sessions, you can rely on the stability and reliability provided by this memory module.

Ecc

The Hynix HMABAGL7MBR4N-XN DDR4 SDRAM features an Ecc (Error-Correcting Code) capability of 1. This important feature enhances the integrity and accuracy of data stored in the memory module.

Data Integrity Assurance

Ecc functionality is designed to detect and correct errors that may occur during data storage or transfer. By featuring an Ecc capability of 1, this memory module ensures the highest level of data integrity. It detects and corrects errors in real-time, preventing data corruption or loss. This is particularly vital for professionals who deal with sensitive data or critical operations that require utmost accuracy.

Reliable Performance

The Ecc capability of this DDR4 SDRAM module contributes to its overall reliability. It mitigates the risk of data corruption due to undetected errors and maintains consistent performance even under heavy workloads. Whether you are running complex calculations or handling mission-critical operations, you can trust that your data will remain intact and accurate.

Peace of Mind

Knowing that your data is protected by an Ecc-capable memory module provides peace of mind. The robust error detection and correction capabilities ensure that your valuable information remains secure and untainted. This feature is particularly important for businesses, professionals, and individuals who rely on their systems for critical tasks or store sensitive data.

Registered

The Hynix HMABAGL7MBR4N-XN DDR4 SDRAM is a registered memory module with a registered capability of 1. This feature enhances the stability and reliability of the memory module, making it ideal for demanding applications and systems.

Stability and Performance Optimization

Registered memory modules are equipped with an additional register between the memory controller and the memory chips. This register helps to improve signal integrity, reduce electrical load, and enhance overall stability. By featuring a registered capability of 1, this memory module ensures optimal performance and reliability even in high-demand environments.

Scalability for Expanding Systems

The registered capability of this DDR4 SDRAM module allows for greater scalability. It enables the system to accommodate additional memory modules without compromising stability or performance. This feature is particularly beneficial for professionals or businesses that anticipate future expansion or need to upgrade their systems to meet growing demands.

Enhanced Memory Management

Registered memory modules offer improved memory management capabilities. With a registered capability of 1, this memory module provides better control over data transmission, reducing the chances of data errors or corruption. It ensures that data is delivered accurately and reliably, enhancing overall system efficiency and minimizing potential disruptions.

Rank

The Hynix HMABAGL7MBR4N-XN DDR4 SDRAM boasts a Quad Rank configuration. This specific rank configuration offers several benefits that enhance system performance and ensure seamless operation.

Optimized Memory Organization

The Quad Rank configuration distributes the memory modules into four logical ranks, allowing for efficient data organization and access. This improves overall memory performance as it reduces contention and optimizes data retrieval. With this configuration, you can expect faster read and write speeds, resulting in enhanced system responsiveness.

Greater Memory Capacity

The Quad Rank configuration also enables greater memory capacity. It allows for the installation of more memory modules without sacrificing performance or stability. This feature is particularly advantageous for systems that require large amounts of memory, such as servers or workstations running resource-intensive applications.

Improved System Stability

The Quad Rank configuration enhances system stability by balancing the load across multiple ranks. This prevents any single rank from becoming overwhelmed, reducing the risk of memory-related issues such as crashes or system instability. With this memory module, you can rely on consistent and reliable system performance, even under heavy workloads.

Organization

The Hynix HMABAGL7MBR4N-XN DDR4 SDRAM features an X4 organization. This organizational structure provides several benefits that enhance memory performance and efficiency.

Optimized Data Layout

The X4 organization arranges data in a manner that maximizes memory efficiency. It allows for the storage of four bits of data per memory cell, resulting in higher memory density and improved performance. This organizational structure ensures that data is stored and retrieved with minimal latency, enhancing overall system responsiveness.

Increased Memory Capacity

The X4 organization enables greater memory capacity by allowing more data to be stored in each memory cell. This means that you can achieve higher memory capacities without requiring additional physical memory modules. Whether you are working with large datasets or running memory-intensive applications, this feature ensures that you have ample memory to meet your needs.

Cost-Effective Solution

The X4 organization offers a cost-effective solution for users who require high memory capacity without breaking the bank. By enabling increased memory density, this organizational structure reduces the need for additional memory modules, resulting in cost savings. This is particularly beneficial for businesses or individuals operating on a budget but still requiring substantial memory resources.

Voltage

The Hynix HMABAGL7MBR4N-XN DDR4 SDRAM operates at a voltage of 1.2v. This low voltage requirement provides several advantages that enhance system efficiency and reduce power consumption.

Energy Efficiency

Operating at a voltage of 1.2v, this memory module consumes less power compared to modules with higher voltage requirements. This translates into energy savings and reduced electricity costs, making it an environmentally-friendly option. Additionally, the low voltage requirement contributes to lower heat generation, resulting in improved system cooling and overall energy efficiency.

Compatibility with Modern Systems

The 1.2v voltage requirement of this DDR4 SDRAM module ensures compatibility with modern systems that adhere to industry standards. It allows for seamless integration into systems that are designed to operate at lower voltages, ensuring optimal performance and stability. This feature is particularly important for individuals or businesses upgrading their systems or building new ones.

Longer Lifespan

The low voltage requirement of this memory module contributes to its longevity. By operating at a lower voltage, it puts less strain on the components, reducing the risk of premature wear and failure. This translates into a longer lifespan for the memory module, allowing you to enjoy its benefits for an extended period without the need for frequent replacements.

Form Factor

The Hynix HMABAGL7MBR4N-XN DDR4 SDRAM features a 288-Pin Lrdimm form factor. This specific form factor offers several benefits that enhance compatibility, ease of installation, and overall system performance.

Universal Compatibility

The 288-Pin Lrdimm form factor is widely adopted and supported by various motherboard manufacturers, ensuring maximum compatibility with different systems. It allows for easy integration into existing setups and simplifies the process of upgrading or replacing memory modules. This form factor ensures that the memory module will fit securely and function optimally in various systems, providing peace of mind for users.

Easy Installation

The 288-Pin Lrdimm form factor simplifies the installation process. The standardized design and pin layout make it easy to align and insert the memory module into the motherboard's memory slots. This reduces the chances of installation errors or damage to the module. Whether you are a seasoned computer enthusiast or a first-time builder, this form factor ensures a hassle-free installation experience.

Optimal Signal Integrity

The 288-Pin Lrdimm form factor provides optimal signal integrity, ensuring reliable data transmission between the memory module and the motherboard. The design minimizes signal interference and ensures that data is delivered accurately, reducing the risk of errors or data corruption. With this form factor, you can expect stable and consistent system performance.

In summary, the Hynix HMABAGL7MBR4N-XN DDR4 SDRAM is a high-performance memory module that excels in capacity, speed, Cas Latency, Ecc capability, registered functionality, rank configuration, organization, voltage requirement, and form factor. Its 128GB capacity allows for seamless multitasking, improved gaming experiences, and efficient data processing. The 3200MHz speed enhances overall system performance, responsiveness, and gaming capabilities. The CL22 Cas Latency ensures optimal memory access and stability. The Ecc capability of 1 guarantees data integrity and reliability. The registered capability of 1 enhances stability, scalability, and memory management. The Quad Rank configuration optimizes memory organization, capacity, and system stability. The X4 organization maximizes memory efficiency and capacity while providing a cost-effective solution. The low 1.2v voltage requirement ensures energy efficiency, compatibility, and a longer lifespan. Finally, the 288-Pin Lrdimm form factor offers universal compatibility, easy installation, and optimal signal integrity. With these exceptional features and benefits, the Hynix HMABAGL7MBR4N-XN DDR4 SDRAM is an outstanding choice for users who demand high-performance memory for their systems.