HMCT04MEERA138N Hynix 128GB DDR5 RDIMM 1.1V Quad Rank Memory Module
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HYNIX HMCT04MEERA138N 128GB DDR5 SDRAM Memory Module
Overview
- Manufacturer: SK HYNIX
- Part Number: HMCT04MEERA138N
- Product Designation: 128GB DDR5 SDRAM Module
Technical Specifications
- Storage Capacity: 128GB
- Memory Type: DDR5 SDRAM
- Module Configuration: 1 x 128GB
- Bus Speed: 4800MT/s (DDR5-38400 / PC5-38400)
- Error Checking: ECC (Error-Correcting Code)
- Signal Processing: Registered
- CAS Latency: CL40
- Rank Features: 4Rx4
Physical Characteristics
- Form Factor: 288-pin RDIMM
- Shipping Dimensions: 1.00 inch (Height) x 6.75 inches (Depth)
- Weight: 0.20 lb
Performance Features
- Offers an impressive speed of 4800MT/s, optimizing data transfer rates for high-performance applications.
- The ECC technology enhances data reliability by detecting and correcting errors, essential for mission-critical environments.
- Registered memory design allows for increased capacity and stability, making it suitable for extensive server setups.
- Low operating voltage of 1.2V ensures energy efficiency, contributing to reduced operational costs while maintaining performance.
Compatibility
- Designed to be compatible with various server models, including:
- PowerEdge R660
- PowerEdge R760
- PowerEdge R960
- PowerEdge R760xd
Benefits of the HMCT04MEERA138N Memory Module
- The substantial 128GB capacity facilitates efficient multitasking and enhances overall system performance.
- Reliable registered memory architecture minimizes system bottlenecks, ensuring optimal processing speeds.
- Advanced ECC technology reduces the risk of data corruption, promoting greater data integrity across applications.
A Future-Proof Solution
- Engineered to meet the demands of modern computing environments, ensuring readiness for future advancements.
- Supports the latest DDR5 technology, providing improved bandwidth and faster data handling capabilities.
- Low power consumption of 1.2V helps in lowering electricity costs, making it an eco-friendly choice for enterprises.
Capacity
The Hynix HMCT04MEERA138N DDR5 RDIMM is a high-performance memory module that offers a massive capacity of 128GB. This substantial amount of memory is ideal for users who require a significant amount of RAM for their computing needs.
Benefits of 128GB Capacity
Having a memory module with a capacity of 128GB provides several benefits to users:
1. Enhanced Multitasking
The large capacity allows users to run multiple resource-intensive applications simultaneously without experiencing any slowdowns. Whether you are a professional video editor, a data analyst working with large datasets, or a gamer running demanding games, the 128GB capacity ensures that your system can handle the workload without any performance bottlenecks.
2. Future-Proofing
As technology advances and software becomes more demanding, having ample memory becomes crucial. With 128GB, you can future-proof your system and ensure that it remains capable of handling upcoming applications and operating systems efficiently.
3. Virtualization and Server Applications
The 128GB capacity is particularly valuable for users running virtualization environments or server applications. These types of workloads require significant amounts of memory to host multiple virtual machines or handle large-scale data processing. With this DDR5 RDIMM, you can ensure smooth performance and avoid any potential memory constraints.
4. High-Performance Computing
If you are involved in fields like scientific research, engineering, or artificial intelligence, where high-performance computing is essential, the 128GB capacity offers the necessary resources to handle complex computations efficiently. Memory-intensive tasks such as simulations, modeling, and data analysis can greatly benefit from the increased capacity.
Importance of 128GB Capacity
The importance of the 128GB capacity lies in its ability to provide users with the necessary resources to tackle demanding tasks without compromising performance. With an ample amount of memory, users can experience seamless multitasking, future-proof their systems, and ensure smooth operation in resource-intensive applications, virtualization environments, and high-performance computing scenarios.
Voltage
The Hynix HMCT04MEERA138N DDR5 RDIMM operates at a low voltage of 1.1V. This feature offers several benefits to users in terms of power efficiency, performance, and compatibility.
Benefits of 1.1V Voltage
Operating at a voltage of 1.1V provides various advantages:
1. Power Efficiency
A lower voltage translates to reduced power consumption. By consuming less power, the DDR5 RDIMM not only contributes to environmental sustainability but also helps to lower electricity bills. This efficiency is particularly important for users who run energy-intensive systems or have a large number of memory modules installed.
2. Overclocking Potential
The lower voltage requirement allows for better overclocking potential. Overclocking refers to pushing the memory module beyond its default clock speed to achieve higher performance. With the 1.1V voltage, users can potentially achieve stable overclocks without significantly increasing power consumption or risking system stability.
3. Compatibility
The 1.1V voltage is compatible with most modern motherboards, ensuring seamless integration with a wide range of systems. Users can easily install the DDR5 RDIMM without worrying about compatibility issues or needing to upgrade their motherboard or other components.
4. Heat Management
A lower voltage also contributes to better heat management. By consuming less power, the memory module generates less heat, reducing the strain on your system's cooling solution. This feature is particularly valuable for users who operate in high-temperature environments or have systems with limited cooling capabilities.
Importance of 1.1V Voltage
The importance of the 1.1V voltage lies in its ability to provide users with power efficiency, overclocking potential, compatibility, and improved heat management. By operating at a lower voltage, the DDR5 RDIMM ensures optimal performance, reduces energy consumption, and offers compatibility with a wide range of systems.
Rank
The Hynix HMCT04MEERA138N DDR5 RDIMM features Quad Rank, which is an essential feature for users who require high memory density and improved performance in their systems.
Benefits of Quad Rank
The Quad Rank feature offers several benefits:
1. Higher Memory Density
Quad Rank memory modules provide higher memory density compared to lower rank modules. This allows users to populate their systems with more memory without sacrificing performance. With the Quad Rank feature, you can maximize the memory capacity of your system and handle memory-intensive tasks more efficiently.
2. Improved Performance
The Quad Rank design enhances the overall performance of the memory module. With more ranks, the system can access data from different memory banks simultaneously, resulting in faster data retrieval and improved overall system responsiveness. This is particularly beneficial for applications that heavily rely on random access memory operations.
3. Memory Channel Utilization
Quad Rank modules allow for better utilization of memory channels in dual- or quad-channel memory configurations. By populating each memory channel with Quad Rank modules, users can achieve optimal memory bandwidth and performance. This is especially important for users who require high-speed memory access or run memory-intensive applications.
4. Reduced Power Consumption
Quad Rank modules tend to consume less power compared to their lower rank counterparts. This is advantageous for users who prioritize power efficiency or operate systems with limited power budgets. With reduced power consumption, the overall energy consumption of the system can be optimized without compromising performance.
Importance of Quad Rank
The importance of the Quad Rank feature lies in its ability to provide higher memory density, improved performance, optimal memory channel utilization, and reduced power consumption. By incorporating Quad Rank memory modules, users can maximize their system's memory capacity, enhance overall performance, and achieve a balance between power efficiency and performance.