HPE P11444-191 32GB DDR4 SDRAM 3200MHz ECC Registered Memory

Capacity: 32GB

The HPE P11444-191 DDR4 SDRAM offers an impressive capacity of 32GB. This high capacity makes it an ideal choice for users who require a significant amount of memory for their computing needs. Whether you are a professional working with resource-intensive applications or a gamer who wants to ensure smooth gameplay, this 32GB capacity will provide you with the necessary power to handle demanding tasks.

Enhanced Performance

With a capacity of 32GB, this DDR4 SDRAM module allows for enhanced performance and multitasking capabilities. It enables you to run multiple applications simultaneously without experiencing any lag or slowdown in performance. You can effortlessly switch between tasks, open large files, and work with data-intensive software without worrying about memory constraints.

Seamless Multitasking

The 32GB capacity ensures that you can run memory-hungry applications and perform intensive tasks without the need to compromise on performance. Whether you are editing high-resolution videos, working on complex design projects, or running virtual machines, this DDR4 SDRAM module has the capacity to handle it all. You can seamlessly multitask and maintain productivity without any noticeable impact on speed or responsiveness.

Future-Proofing

Investing in a DDR4 SDRAM module with a capacity of 32GB is a smart decision for future-proofing your system. As software and applications become more advanced, they tend to require larger amounts of memory. By opting for this high-capacity module, you can ensure that your system remains compatible with upcoming software updates and can handle the demands of future technologies.

Speed: 3200MHz

The HPE P11444-191 DDR4 SDRAM boasts an impressive speed of 3200MHz. This high-speed performance enhances the overall responsiveness and efficiency of your system, allowing you to experience smoother operations and faster data transfers.

Fast and Efficient Data Processing

The 3200MHz speed of this DDR4 SDRAM module ensures that data is processed quickly and efficiently. It enables your system to retrieve and transfer data at a rapid pace, resulting in reduced load times for applications, faster file transfers, and improved overall system performance. Whether you are loading large files, running memory-intensive software, or engaging in online gaming, the high speed of this module ensures a seamless user experience.

Improved System Responsiveness

A higher speed translates to improved system responsiveness. With the 3200MHz speed of this DDR4 SDRAM module, you can experience snappy and lag-free operations. Your system will be more responsive to your commands, allowing you to navigate through applications, browse the web, and perform tasks with minimal delay. This enhanced responsiveness enhances your productivity and overall user experience.

Optimized Gaming Performance

Gamers can benefit greatly from the 3200MHz speed of this DDR4 SDRAM module. The high speed ensures that data is quickly accessed by the CPU and GPU, resulting in reduced input lag and smoother gameplay. Whether you are playing fast-paced action games or immersive role-playing adventures, the high-speed performance of this module will provide you with a competitive edge and an immersive gaming experience.

Cas Latency: CL22

The HPE P11444-191 DDR4 SDRAM features a Cas Latency (CL) rating of CL22. The Cas Latency refers to the time delay between the moment a memory controller requests data from memory and when it receives a response. A lower Cas Latency indicates faster response times and improved overall system performance.

Enhanced System Responsiveness

The CL22 rating of this DDR4 SDRAM module ensures enhanced system responsiveness. The lower Cas Latency allows for quicker data retrieval and response times, resulting in reduced delays and improved overall system performance. Whether you are launching applications, accessing files, or performing memory-intensive tasks, the lower Cas Latency ensures a seamless and snappy user experience.

Optimized Gaming Experience

Gamers can benefit greatly from the CL22 rating of this DDR4 SDRAM module. The lower Cas Latency ensures faster data access and retrieval, resulting in reduced input lag and improved gaming performance. Gamers can enjoy smoother gameplay, quicker response times, and a more immersive gaming experience with this module installed in their system.

Efficient Multitasking

The CL22 rating of this module plays a crucial role in efficient multitasking. It allows your system to quickly switch between tasks and access the required data without significant delays. Whether you are running multiple applications simultaneously or working with memory-intensive software, the lower Cas Latency ensures that your system can handle multitasking efficiently without compromising on performance.

Ecc: 1

The HPE P11444-191 DDR4 SDRAM module features Error Correcting Code (ECC) functionality with a value of 1. ECC is a technology that detects and corrects errors in data stored in memory. This feature is particularly important for users who require high levels of data integrity and reliability.

Data Integrity and Reliability

The ECC functionality provided by this module ensures high levels of data integrity and reliability. It detects and corrects errors that may occur during data storage and retrieval processes, minimizing the risk of data corruption or loss. This feature is critical for users who work with sensitive data, such as financial information, scientific research, or critical business data, as it provides an additional layer of protection against data errors.

Improved System Stability

The ECC functionality helps maintain system stability by identifying and correcting memory errors. By ensuring the accuracy of data stored in memory, this feature helps prevent system crashes, freezes, and other stability issues that may arise due to memory errors. Users can rely on the stability and reliability provided by this DDR4 SDRAM module, even when working with memory-intensive applications or running complex tasks.

Peace of Mind

For users who value peace of mind, the ECC functionality of this module offers reassurance that their data is protected. The ability to detect and correct errors provides an additional layer of security and ensures that critical information remains accurate and intact. Whether you are working on important projects, storing valuable data, or running mission-critical applications, the ECC functionality offers peace of mind by safeguarding your data against potential errors.

Pin Number: 288

The HPE P11444-191 DDR4 SDRAM module features 288 pins. The pin count is an important specification that determines the compatibility of the module with your system's memory slots. The higher pin count allows for more data transfer channels and greater overall memory bandwidth.

Compatibility with Modern Systems

The 288-pin configuration of this DDR4 SDRAM module ensures compatibility with modern systems that support DDR4 memory. Many current motherboards are designed to accommodate modules with a 288-pin configuration, making this module a suitable choice for upgrading your system or building a new one. You can easily install this module in your compatible system without any compatibility issues.

Increased Memory Bandwidth

The higher pin count of 288 allows for increased memory bandwidth. Memory bandwidth refers to the rate at which data can be transferred between the memory module and other components of the system, such as the CPU. With a higher memory bandwidth, your system can handle data transfers more efficiently, resulting in improved overall performance. This is particularly beneficial for memory-intensive tasks, such as video editing, 3D rendering, or scientific simulations.

Future-Proofing

Opting for a DDR4 SDRAM module with a 288-pin configuration offers future-proofing benefits. As DDR4 becomes the standard for memory modules, more and more systems will support the 288-pin configuration. By choosing a module with this pin count, you can ensure that your system remains compatible with future upgrades and advancements in memory technology.