HMAG84EXNRA086N Hynix 32GB PC4-25600 DDR4-288 Memory Kit
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Comprehensive Product Overview
The Hynix HMAG84EXNRA086N delivers advanced performance with a 32GB DDR4 SDRAM module, engineered for enterprise-grade servers and workstations requiring stability, speed, and reliability.
General Information
- Brand: Hynix
- Model Number: HMAG84EXNRA086N
- Product Type: 32GB DDR4 Memory Module
Technical Information
- Capacity: 32GB single module
- Technology: DDR4 SDRAM
- Speed Rating: 3200MT/s, PC4-25600
- Latency: CL22 timing
- Error Correction: ECC functionality for data integrity
- Processing Type: Registered DIMM for enhanced stability
- Rank Design: Dual Rank (2Rx4) configuration
Physical Characteristics
Form Factor
- 288-pin RDIMM layout
- Optimized for server-grade motherboards
Compatibility Matrix
PowerEdge Servers
- R640, R740, R940
- R740xd, R440, R540
- T640, T440
- C6420, C4140
- FC640, M640, M640 VRTX
Precision Workstations
- T7820, T7820 XL
- T5820, T5820 XL
- T7920, T7920 XL
- R7920, R7920 XL
Hynix HMAG84EXNRA086N 32GB Memory Module
The Hynix HMAG84EXNRA086N features a substantial 32GB memory capacity configured as a single module (1x32GB). This high-density memory configuration is engineered to maximize memory slot efficiency in server environments, allowing systems to achieve higher total memory capacities with fewer physical modules. The single module design simplifies initial deployment and future memory expansion while maintaining optimal performance characteristics.
Performance Speed and Data Transfer Rates
Operating at 3200MT/s (MegaTransfers per second), this memory module delivers exceptional data throughput capabilities. The PC4-25600 designation indicates a peak transfer rate of 25,600 MB/s, ensuring rapid data access and processing for memory-intensive server applications. This high-speed performance supports faster application loading, reduced latency, and improved overall system responsiveness in enterprise environments.
Advanced Memory Technology
ECC Registered Architecture
The HMAG84EXNRA086N ECC (Error Correcting Code) functionality represents a critical reliability feature for server environments. This advanced error correction capability automatically detects and corrects single-bit memory errors in real-time, while also detecting multi-bit errors. The Registered (buffered) design incorporates register chips that reduce electrical load on the memory controller, enabling support for higher memory capacities and improved signal integrity across large memory arrays. This combination ensures exceptional data integrity and system stability for mission-critical applications.
Dual Rank
Featuring a Dual Rank architecture, this module organizes memory chips into two separate logical banks that can be accessed independently. This configuration improves memory controller efficiency by allowing alternating access between ranks, effectively reducing latency and increasing overall memory bandwidth utilization. The dual rank design provides an optimal balance between performance, capacity, and compatibility across various server platforms.
288-Pin RDIMM Form Factor
The module utilizes the standard 288-pin RDIMM (Registered Dual In-Line Memory Module) form factor, ensuring broad compatibility with enterprise server systems. The precise pin configuration and module dimensions comply with JEDEC industry standards, guaranteeing proper physical integration and reliable electrical connections within compatible server memory slots. The robust physical construction withstands the rigorous demands of continuous server operation.
X4 DRAM Device Organization
The HMAG84EXNRA086N x4 DRAM organization (4-bit wide data interfaces per memory chip) provides enhanced reliability characteristics compared to alternative configurations. This architecture supports enhanced chipkill functionality and improves error correction capabilities, making it particularly suitable for high-availability systems where maximum uptime and data integrity are paramount requirements.
Power Efficiency
Operating at 1.2V, this DDR4 memory module delivers improved power efficiency compared to previous generation DDR3 memory. The reduced voltage requirement contributes to lower overall power consumption and heat generation within server systems, supporting better thermal management and reduced operating costs in data center environments. The power-efficient design aligns with modern energy-conscious computing initiatives.
Timing Parameters and Latency Characteristics
With CAS Latency (CL22) timing, this module provides optimized performance characteristics for server workloads. The latency specifications are carefully balanced to deliver reliable performance across diverse server applications while maintaining compatibility with a wide range of server platforms. The timing parameters ensure stable operation at the specified 3200MT/s data rate without compromising system reliability.
Server Application and Deployment
Enterprise Server Compatibility
This memory module is engineered for compatibility with major server platforms from leading manufacturers including Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Cisco UCS, and Supermicro systems. The module undergoes rigorous compatibility testing to ensure seamless integration and reliable performance across diverse server architectures and generations supporting DDR4 technology.
Virtualization and Cloud Infrastructure
Ideal for virtualized environments, the high-density 32GB capacity supports memory consolidation strategies by enabling higher virtual machine densities per physical host. The ECC protection ensures the integrity of multiple simultaneous workloads, while the high bandwidth supports demanding virtualization applications including VDI, server virtualization, and containerized environments.
Workload Optimization
Database and Transaction Processing
Optimized for database management systems and online transaction processing (OLTP) applications, this memory delivers the consistent performance and reliability required for critical database operations. The high capacity supports large in-memory databases, while the ECC functionality protects against data corruption in sensitive financial and transactional systems.
High-Performance Computing Applications
Suited for technical computing, scientific research, and engineering simulations that demand both high memory capacity and reliability. The combination of high bandwidth and error correction ensures accurate computational results and system stability during extended processing tasks common in research and development environments.
Enterprise-Grade Reliability
Engineered for continuous operation in controlled data center environments, this memory maintains stable performance across standard server operating temperature ranges. The thermal design incorporates considerations for proper airflow and heat dissipation, ensuring consistent operation in properly cooled server installations.
Signal Integrity Enhancements
Advanced signal integrity features including onboard parity checking for commands and addresses further enhance reliability. The registered buffer design improves signal quality in systems with large memory configurations, ensuring data accuracy and system stability even under heavy memory utilization conditions.
Performance Characteristics
DDR4 Architecture Benefits
Leveraging DDR4 technological improvements including higher data rates, improved bandwidth, and enhanced power efficiency compared to previous generations. The architectural enhancements include updated bank groups for improved efficiency, additional prefetch options, and refined command structure for better overall performance in server applications.
Data Integrity Features
Comprehensive data protection through ECC with SDDC (Single Device Data Correction) capability provides chipkill-like functionality for enhanced reliability. The error correction architecture can correct single symbol errors and detect double symbol errors within the same device, significantly improving system availability and reducing uncorrectable error rates.
