HMAT14JXSLB126N Hynix 256GB PC4-25600 DDR4 3200MHz Memory Module 2S4RX4 RDIMM ECC

Hynix HMAT14JXSLB126N 256GB Module Module

The Hynix HMAT14JXSLB126N represents the pinnacle of server-grade memory technology, engineered specifically for enterprise environments where reliability, performance, and data integrity are non-negotiable. This 256GB LRDIMM module incorporates advanced memory architecture to support mission-critical applications in data centers, cloud computing infrastructure, and high-performance computing clusters.

Enterprise-Grade Memory Architecture

Built upon Hynix's proven semiconductor expertise, this memory module utilizes cutting-edge DRAM technology optimized for 24/7 operation under demanding server workloads. The integration of ECC (Error Correcting Code) and Registered technology ensures maximum data protection while maintaining signal integrity across large-scale memory configurations.

Key Specifications

The HMAT14JXSLB126N operates at 3200MHz with PC4-25600 data transfer rates, providing substantial bandwidth for memory-intensive applications. The CL22 timing configuration balances performance with stability, while the 1.2V operating voltage aligns with modern power efficiency requirements for green data center initiatives.

256GB Memory Capacity

As a single 256GB module, the HMAT14JXSLB126N enables massive memory configurations in modern server platforms. This high-density design allows system administrators to maximize memory capacity while minimizing slot usage, ultimately reducing overall system power consumption and simplifying memory hierarchy management.

High-Density Memory Advantages

The 256GB capacity per module represents significant advancements in DRAM density technology. This high-density approach enables servers to address larger datasets in-memory, reducing reliance on slower storage subsystems and accelerating data processing for analytics, virtualization, and database applications.

Single Module

The 1x256GB configuration provides flexibility in server memory population, allowing incremental memory expansion without requiring matched pairs for initial deployment. This single-module approach simplifies upgrades and provides cost-effective scaling paths for growing enterprise needs.

3200MHz Performance Characteristics

Operating at 3200MHz, the HMAT14JXSLB126N delivers PC4-25600 data transfer rates, translating to 25.6 GB/s of theoretical bandwidth per module. This high-frequency operation enables rapid data access for CPU-intensive workloads and reduces memory bottlenecks in multi-processor server environments.

PC4-25600 Data Transfer Technology

The PC4-25600 designation indicates the module's peak transfer capability of 25,600 MB/s. This bandwidth is crucial for modern server applications where multiple processors and cores simultaneously access memory resources, ensuring smooth operation under heavy concurrent load conditions.

CAS Latency 22 Timing Parameters

With CL22 timing, this module optimizes the balance between speed and stability. The CAS Latency of 22 clock cycles represents the number of cycles between a read command and data availability, carefully tuned for server reliability while maintaining competitive performance characteristics.

Real-World Performance Impact

In enterprise environments, the 3200MHz frequency combined with CL22 timing delivers responsive performance for virtualized environments, large database transactions, and in-memory computing applications. The bandwidth supports high I/O operations and rapid data processing across multiple virtual machines.

ECC and Registered DIMM Technology

The HMAT14JXSLB126N incorporates both ECC (Error Correcting Code) and Registered (buffered) technologies, representing the gold standard for server memory reliability. These features work in concert to prevent data corruption, correct memory errors, and maintain system stability in mission-critical applications.

Error Correcting Code Implementation

ECC technology detects and corrects single-bit memory errors automatically, while detecting multi-bit errors to prevent data corruption. This capability is essential for servers running financial transactions, scientific computations, database operations, and any application where data integrity is paramount.

Registered DIMM Architecture

The Registered (buffered) design incorporates address and command buffers between the memory controller and DRAM chips. This buffering reduces electrical load on the memory controller, enabling support for higher memory capacities and more DIMMs per channel while maintaining signal integrity.

Error Prevention Mechanisms

Beyond basic ECC correction, the module includes advanced error prevention features that monitor memory health, track error rates, and provide early warning of potential memory failures. This proactive approach to memory management helps prevent system crashes and data loss.

Load Reduced DIMM (LRDIMM) Technology

As an LRDIMM (Load Reduced Dual In-line Memory Module), the HMAT14JXSLB126N represents the highest tier of server memory technology. LRDIMMs utilize memory buffers to reduce electrical loading on both the data bus and address/command buses, enabling higher memory speeds and capacities compared to RDIMMs.

LRDIMM vs RDIMM Comparison

While RDIMMs buffer only address and command signals, LRDIMMs buffer data signals as well. This comprehensive buffering allows LRDIMMs to support higher memory densities and faster operating speeds, making them ideal for maximum memory configuration scenarios in enterprise servers.

Memory Buffer Advantages

The integrated memory buffer (iMB) technology in LRDIMMs presents a single electrical load to the memory controller regardless of the number of DRAM devices on the module. This architecture enables the high 256GB density while maintaining compatibility with server memory controllers designed for lower electrical loads.

Performance Scaling Benefits

In multi-DIMM configurations, LRDIMMs maintain higher operating speeds compared to RDIMMs when populating all available memory channels. This performance preservation under full population makes LRDIMMs the preferred choice for memory-intensive applications requiring maximum capacity.

Octal Rank X4 Memory Organization

The Octal Rank X4 design represents an advanced memory organization where eight independent ranks of DRAM chips operate in parallel using x4 data interfaces. This architecture optimizes memory access patterns and enables the high 256GB capacity while maintaining efficient memory controller utilization.

Rank Architecture Explained

Each rank operates as an independent memory area that can be accessed separately, allowing the memory controller to interleave operations across ranks for improved performance. The eight-rank organization provides substantial parallelism for memory operations, hiding latency and increasing effective bandwidth.

X4 DRAM Chip Configuration

The x4 designation refers to the 4-bit wide data interface of individual DRAM chips. This organization, combined with Error Correcting Code, creates a 72-bit wide data path (64 data bits + 8 ECC bits) across multiple DRAM devices, providing both high capacity and robust error correction.

Memory Access Optimization

The Octal Rank design enables sophisticated memory access patterns where the memory controller can redirect operations to available ranks while others are refreshing or busy. This rank-level parallelism is particularly beneficial for applications with random access patterns and high memory utilization.

Data Center Efficiency Impact

In large-scale deployments, the power efficiency of 1.2V operation translates to substantial reductions in electricity costs and cooling requirements. This efficiency supports corporate sustainability initiatives while maintaining the performance required for business-critical applications.

288-Pin DIMM Physical Specifications

The HMAT14JXSLB126N utilizes the standard 288-pin DDR4 DIMM form factor with specific mechanical adaptations for server environments. The physical design ensures compatibility with server memory slots while providing robust mechanical retention and proper thermal characteristics for continuous operation.

DIMM Form Factor Compatibility

The 288-pin arrangement follows JEDEC standards for DDR4 memory, ensuring broad compatibility with server platforms from major manufacturers. The physical dimensions and keying prevent installation in incompatible systems, protecting against damage from incorrect installation.

Server-Grade Construction

Built to withstand the mechanical demands of data center environments, the module features reinforced PCB construction, secure component mounting, and durable contact pins. This robust physical design ensures reliable operation through thermal cycling, vibration, and repeated installation cycles.

Enterprise Application Scenarios

The HMAT14JXSLB126N is engineered for demanding enterprise workloads where high memory capacity, reliability, and performance are critical. Its specifications make it suitable for a wide range of server applications across multiple industries and use cases.

Data Center and Cloud Deployment

In cloud infrastructure and large-scale data centers, this memory module supports high-density virtualization, container orchestration platforms, and multi-tenant environments. The high capacity per module enables greater virtual machine density and improved resource utilization.

Database and Analytics Workloads

For in-memory databases, data analytics platforms, and business intelligence applications, the 256GB capacity and 3200MHz speed provide the necessary performance for rapid query processing and real-time analytics. ECC protection ensures data integrity for critical business data.

High-Performance Computing

In scientific computing, engineering simulation, and financial modeling applications, the module's bandwidth and capacity support complex computations and large datasets. The reliability features ensure extended computations complete without memory-related errors.