HMCG78AHBRA472N Hynix 16GB PC5-51200 DDR5-6400MHz 1Rx8 ECC Memory

Hynix HMCG78AHBRA472N 16GB Memory Kit

The Hynix HMCG78AHBRA472N represents a significant advancement in server memory technology, delivering exceptional performance, reliability, and efficiency for modern data center environments. This 16GB DDR5 RDIMM module is engineered to meet the rigorous demands of enterprise servers, workstations, and high-performance computing systems requiring enhanced stability through ECC protection and registered design.

Key Specifications at a Glance

This memory module operates at a blazing-fast speed of 6400 MT/s (MegaTransfers per second), corresponding to a PC5-51200 designation. It requires a low operating voltage of just 1.1V, contributing to improved power efficiency in server environments where energy consumption is a critical operational consideration. The module features a CL46 latency timing and utilizes a 288-pin RDIMM form factor, ensuring compatibility with next-generation server platforms.

Memory Capacity

The Hynix HMCG78AHBRA472N provides a substantial 16GB memory capacity in a single module configuration (1x16GB). This single-rank design optimizes signal integrity and allows for higher frequency operation compared to multi-rank modules of similar capacity. The x8 DRAM device organization refers to the internal architecture where each memory chip has an 8-bit data interface, creating an optimal balance between performance, capacity, and reliability.

Single Rank Architecture Benefits

Single rank memory configuration enables the memory controller to access all memory chips on the module simultaneously without electrical load complications. This results in potentially higher achievable frequencies and reduced latency compared to dual-rank or quad-rank modules. For server applications requiring maximum memory bandwidth, populating multiple channels with single-rank modules can deliver optimal performance.

Rank Multiplication Considerations

While single-rank modules offer performance advantages at high frequencies, system architects must consider total memory capacity requirements. Servers requiring large memory capacities may benefit from mixing single-rank and dual-rank modules to balance performance objectives with maximum memory configuration capabilities supported by the platform.

Performance Characteristics

Data Transfer Speed: 6400 MT/s

Operating at 6400 MegaTransfers per second, this DDR5 module delivers substantially higher bandwidth compared to previous-generation DDR4 memory. The PC5-51200 classification indicates the module's peak transfer rate of 51200 MB/s in a single module configuration. This massive bandwidth enables faster data processing, reduced latency in memory-intensive applications, and improved overall system responsiveness.

Bandwidth

In a typical dual-channel memory configuration, two Hynix HMCG78AHBRA472N modules would provide approximately 102.4 GB/s of theoretical memory bandwidth. For platforms supporting quad-channel or octa-channel memory architectures, aggregate bandwidth scales proportionally, making this module ideal for memory-bandwidth-constrained applications such as database servers, virtualization hosts, and scientific computing systems.

CAS Latency and Timing Parameters

The CL46 CAS latency specification indicates the number of clock cycles between a read command and data availability. While higher than typical DDR4 latencies in terms of clock cycles, the significantly increased clock speed of DDR5 memory results in substantially lower absolute latency in nanoseconds. Advanced timing optimization in this module ensures balanced performance across various workload types.

Advanced DDR5 Technology Features

The Hynix HMCG78AHBRA472N incorporates several DDR5 power management advancements that distinguish it from previous memory generations. The module operates at a reduced voltage of 1.1V compared to DDR4's typical 1.2V, resulting in meaningful power savings when deployed at scale in data center environments.

On-Die ECC Implementation

DDR5 architecture introduces On-Die ECC (Error Correction Code), which corrects bit errors within the DRAM chips themselves before they can affect system operation. This additional layer of error protection works in conjunction with the module-level ECC to provide comprehensive data integrity throughout the memory subsystem.

Server-Specific Features

ECC Registered Design Benefits

The Hynix HMCG78AHBRA472N incorporates both Error Correcting Code (ECC) and Registered (Buffered) technologies, making it specifically suited for enterprise server environments where data integrity and stability are paramount.

Error Correction Code Implementation

ECC technology detects and corrects single-bit memory errors in real-time and detects multi-bit errors, preventing data corruption and potential system crashes. This capability is essential for servers running critical applications, financial transactions, scientific computations, and any workload where data accuracy cannot be compromised.

ECC Overhead and Implementation

The ECC implementation on this module uses additional DRAM chips to store error correction codes, providing single-error correction and double-error detection (SECDED) capabilities. This extra protection comes with a minimal impact on overall module capacity, with approximately 12.5% of the total memory bits dedicated to ECC functionality.

Registered Memory Architecture

The Registered (or Buffered) design incorporates a register between the memory controller and DRAM chips. This register buffers command and address signals, reducing electrical load on the memory controller and enabling support for higher memory capacities per channel. Registered modules are essential for servers that require large memory configurations with multiple modules per memory channel.

Comparison with Unbuffered Memory

Unlike unbuffered memory designed for desktop systems, registered memory like the Hynix HMCG78AHBRA472N introduces a slight additional latency (typically one clock cycle) due to the buffering process. However, this trade-off is necessary to achieve the memory capacity and stability requirements of enterprise server platforms, where maximum memory population is often more critical than minimal latency.

288-Pin RDIMM

The module utilizes a 288-pin RDIMM (Registered Dual In-Line Memory Module) form factor, which is physically similar to DDR4 modules but electrically incompatible. The key notch position differs from DDR4 to prevent accidental insertion into incompatible motherboards. The RDIMM designation specifically indicates the registered buffered architecture designed for servers.

Use Cases

Enterprise Server Deployment

The Hynix HMCG78AHBRA472N is ideally suited for deployment in various enterprise server environments, including rack servers, tower servers, and blade systems. Its combination of high bandwidth, ECC protection, and registered design makes it appropriate for business-critical applications where uptime and data integrity are essential.

Database Servers

Database management systems from Microsoft SQL Server to Oracle Database and MySQL benefit from the high bandwidth and low latency of the Hynix HMCG78AHBRA472N. The ECC functionality is particularly valuable for database applications where data corruption could have severe business consequences.

High-Performance Computing

In technical and scientific computing environments, the Hynix HMCG78AHBRA472N delivers the performance required for complex simulations, data analysis, and computational research. The module's bandwidth capabilities accelerate processing of large datasets and mathematical computations common in HPC workloads.

DDR5 Generation Advantages

The Hynix HMCG78AHBRA472N leverages multiple DDR5 architectural improvements over previous memory generations. These include higher data rates, improved power efficiency, enhanced reliability features, and greater memory densities. The transition to DDR5 represents a significant step forward in memory technology for server platforms.

Comparison with DDR4 Technology

Compared to DDR4 memory, DDR5 offers approximately 50% higher bandwidth at similar power consumption, improved channel efficiency, and more robust error detection and correction capabilities. The Hynix HMCG78AHBRA472N's 6400 MT/s operation substantially outperforms typical DDR4-3200 server memory, providing significant performance uplift for memory-sensitive applications.