HMCGM4MEBRB232N Hynix 96GB DDR5-4800MHz PC5-38400 RDIMM Ram

Highlights of Hynix HMCGM4MEBRB232N 96GB DDR5 ECC Ram

The Hynix HMCGM4MEBRB232N 96GB DDR5 memory module is engineered for enterprise-grade servers that demand high capacity, reliability, and consistent performance. Leveraging DDR5 SDRAM technology, this ECC registered RDIMM is ideal for virtualization, databases, and mission-critical workloads.

General Information

• Manufacturer: SK Hynix
• Part Number: HMCGM4MEBRB232N
• Product Type: Server Memory Module
• Sub Type: DDR5-4800MHz SDRAM

Technical Specifications

• Total Capacity: 96GB
• Module Configuration: 1 x 96GB
• Rank Structure: 2Rx4
• Bus Speed: 4800MHz
• Memory Standard: DDR5-4800 / PC5-38400
• CAS Latency: CL40

Reliability and Data Integrity

• Error Correction Code (ECC): Yes
• Signal Processing: Registered (RDIMM)
• Improved uptime and reduced risk of data corruption.

Physical Characteristics

• Form Factor: 288-Pin RDIMM
• Shipping Dimensions: 1.00 in (H) × 6.75 in (D)
• Shipping Weight: 0.20 lb

Key Features

• Massive 96GB capacity for memory-intensive applications
• DDR5-4800MHz speed for efficient data throughput
• PC5-38400 standard for consistent bandwidth
• ECC protection for enhanced data accuracy
• Registered RDIMM design for server-grade stability
• 2Rx4 architecture for balanced performance

Server Compatibility

• PowerEdge R660
• PowerEdge R760
• PowerEdge R960
• PowerEdge R760xd

Overview of Hynix HMCGM4MEBRB232N DDR5 PC5-38400 Ram

The Hynix HMCGM4MEBRB232N 96GB DDR5-4800MHz PC5-38400 2Rx4 CL40 288-Pin RDIMM ECC Memory Module is positioned within the enterprise-class DDR5 registered memory category that focuses on high-capacity, reliability-driven, and scalable memory solutions for modern server platforms. This category is engineered to support data center environments, virtualization clusters, enterprise databases, and mission-critical workloads where memory density, stability, and long-term operational consistency are essential. DDR5 RDIMM ECC memory modules represent a generational advancement in system memory technology, responding to the rapid evolution of processor architectures that feature increased core counts, wider memory channels, and higher parallelism.

Role of High-Capacity DDR5 Memory in Modern Servers

As enterprise workloads become increasingly data-centric, system memory has become a primary determinant of overall performance and scalability. The Hynix HMCGM4MEBRB232N category is designed for environments that require large memory footprints per socket to support virtualization, in-memory processing, and consolidation strategies. High-capacity DDR5 RDIMM modules enable organizations to deploy fewer physical DIMMs while achieving higher total memory capacity. This approach simplifies system configuration, improves airflow, and reduces power consumption per gigabyte, contributing to operational efficiency in dense data center environments.

Alignment With Enterprise and Cloud Computing Architectures

Enterprise and cloud platforms prioritize predictable performance, platform stability, and long-term availability. The memory category represented by the HMCGM4MEBRB232N module is aligned with these priorities, offering standardized DDR5 RDIMM form factors, ECC protection, and compatibility with leading server processors. This alignment ensures that memory upgrades can be deployed seamlessly within existing infrastructures while supporting future expansion and evolving workload requirements.

DDR5 Memory Technology and Architectural Improvements

DDR5 memory introduces fundamental architectural changes that differentiate it from previous generations. The Hynix HMCGM4MEBRB232N category leverages these improvements to deliver enhanced efficiency, greater scalability, and improved reliability for enterprise systems. Key advancements include increased memory banks, higher burst lengths, and improved command efficiency, all of which contribute to better utilization of available bandwidth. DDR5 also introduces on-module power management, shifting voltage regulation closer to the memory devices for improved stability.

Dual Independent Sub-Channel Design

One of the defining features of DDR5 architecture is the division of each DIMM into two independent sub-channels. The Hynix HMCGM4MEBRB232N category benefits from this design by enabling parallel memory operations within a single module. This sub-channel architecture reduces access contention and improves effective throughput, particularly in multi-core processors where simultaneous memory requests are common.

Enhanced Signal Integrity and Frequency Stability

Operating at DDR5-4800MHz requires precise signal control and robust electrical design. The HMCGM4MEBRB232N category is engineered with advanced PCB layouts, optimized trace routing, and strict manufacturing tolerances to maintain signal integrity across all operating conditions. This focus on stability ensures reliable performance in enterprise environments where systems operate continuously under sustained load.

DDR5-4800MHz Data Rate and Bandwidth Characteristics

The DDR5-4800MHz operating speed of the Hynix HMCGM4MEBRB232N category delivers a PC5-38400 bandwidth rating, providing up to 38.4GB/s of theoretical peak bandwidth per module. This level of performance represents a significant improvement over DDR4 memory and supports the increasing data demands of modern processors. High memory bandwidth ensures that CPUs can maintain high utilization by minimizing stalls caused by memory access delays. This is particularly important in workloads that involve large datasets, frequent memory transactions, or parallel processing.

Bandwidth Scaling in Multi-Channel Server Configurations

Enterprise processors typically feature multiple memory channels per socket, allowing aggregate memory bandwidth to scale linearly as more modules are installed. The Hynix HMCGM4MEBRB232N category is optimized for such configurations, delivering consistent performance when deployed across all available channels. This scalability is essential for high-performance computing, analytics, virtualization, and large-scale transactional systems.

Balanced Performance for Mixed Workloads

While higher DDR5 speeds are available, DDR5-4800MHz offers a balanced approach that prioritizes stability, compatibility, and power efficiency. The HMCGM4MEBRB232N category is well suited for mixed enterprise workloads that require reliable performance across a wide range of applications rather than peak bandwidth alone. This balance makes the category attractive for general-purpose enterprise servers and cloud infrastructure.

96GB Capacity and High-Density Memory Advantages

The 96GB capacity of the Hynix HMCGM4MEBRB232N category represents a high-density memory solution designed to maximize system memory capacity with fewer DIMM slots. This capacity is particularly valuable in servers that support limited DIMM counts or in configurations where maximizing memory per processor socket is a priority. High-capacity memory modules reduce the total number of installed DIMMs required to reach target memory capacities, simplifying system design and improving airflow within server chassis.

Benefits for Workload Consolidation

Virtualized environments rely heavily on system memory to host multiple virtual machines efficiently. The HMCGM4MEBRB232N category enables higher consolidation ratios by providing ample memory resources for guest operating systems, applications, and hypervisors. This capability allows organizations to reduce physical server counts while maintaining performance isolation and resource availability.

In-Memory Databases and Large Datasets

In-memory databases, caching platforms, and real-time analytics engines benefit significantly from large memory capacities. The 96GB capacity of this DDR5 RDIMM ECC memory category allows substantial datasets to reside entirely in memory, reducing latency and improving application responsiveness. This is especially beneficial for financial systems, data analytics platforms, and scientific computing applications.

2Rx4 Memory Organization and Architectural

The 2Rx4 configuration of the Hynix HMCGM4MEBRB232N category indicates a dual-rank module built using x4 DRAM devices. This organization is widely used in enterprise memory because it balances performance, reliability, and compatibility with server memory controllers. Dual-rank designs enable rank interleaving, allowing the memory controller to alternate access between ranks and improve effective throughput.

Advantages of x4 DRAM Devices in ECC Implementations

x4 DRAM devices provide stronger error detection and correction capabilities compared to x8 devices, making them the preferred choice for enterprise ECC memory. The HMCGM4MEBRB232N category leverages x4 devices to enhance ECC effectiveness and maintain high data integrity. This design supports mission-critical applications where even minor data corruption can have significant consequences.

Enterprise Memory Controllers

Enterprise-grade processors from leading vendors are optimized for 2Rx4 RDIMM configurations. The Hynix HMCGM4MEBRB232N category aligns with these expectations, ensuring broad compatibility and stable operation across supported server platforms. This compatibility simplifies system qualification and reduces the risk of interoperability issues.

CAS Latency CL40 and Timing Characteristics

The CAS latency rating of CL40 reflects the timing characteristics of the Hynix HMCGM4MEBRB232N category at DDR5-4800MHz. CAS latency represents the delay between a read command and data availability, and it must be considered in conjunction with operating frequency to evaluate overall performance. At DDR5-4800MHz, CL40 provides a balanced timing profile that supports stable operation while delivering improved throughput compared to previous DDR generations.

Timing Stability Under Continuous Enterprise Load

Enterprise systems often operate under continuous load, placing sustained stress on memory timing margins. The HMCGM4MEBRB232N category is validated to maintain timing stability in such conditions, ensuring reliable operation in production environments. This stability contributes to predictable application performance and long-term system reliability.

Effective Performance in Real-World Applications

While raw latency values are important, real-world memory performance is influenced by a combination of frequency, architecture, and workload characteristics. The DDR5 enhancements incorporated into this category help mitigate latency impacts by improving parallelism and bandwidth efficiency. This results in strong effective performance across a wide range of enterprise workloads.

ECC Functionality and Data Integrity Protection

Error-correcting code functionality is a fundamental requirement for enterprise memory. The Hynix HMCGM4MEBRB232N category incorporates full ECC support, enabling detection and correction of single-bit memory errors and detection of multi-bit errors. ECC memory protects systems from silent data corruption caused by electrical interference, component aging, or environmental factors, ensuring data accuracy and system stability.

Importance of ECC in Always-On Systems

Enterprise servers and infrastructure platforms often run continuously for extended periods. Over time, memory errors can accumulate if not corrected. ECC functionality in the HMCGM4MEBRB232N category mitigates these risks, supporting uninterrupted operation. This reliability is critical for applications such as financial transactions, healthcare systems, and large-scale enterprise databases.

Integration With Platform Reliability and Monitoring Features

ECC memory works in conjunction with processor and platform reliability, availability, and serviceability features. The Hynix HMCGM4MEBRB232N category supports error reporting and health monitoring, enabling proactive maintenance and system management. This integration enhances overall infrastructure resilience and reduces the risk of unexpected failures.

On-Module Voltage Regulation Advantages

By integrating voltage regulation onto the memory module, DDR5 reduces power noise and improves stability at higher speeds. The HMCGM4MEBRB232N category benefits from this architecture, supporting reliable operation at DDR5-4800MHz. This design also simplifies motherboard power distribution and enhances overall system efficiency.

Thermal Stability in High-Density Deployments

High-capacity memory modules can contribute to increased thermal density within server chassis. The Hynix HMCGM4MEBRB232N category is designed to operate within enterprise thermal envelopes, maintaining performance without excessive heat generation. This thermal stability supports reliable operation in data centers with constrained cooling resources.

Hynix Manufacturing Expertise and Enterprise Validation

Hynix is a globally recognized leader in DRAM manufacturing, supplying memory solutions for enterprise, cloud, and high-performance computing markets. The HMCGM4MEBRB232N category reflects this expertise through rigorous design, testing, and quality assurance processes. Each module is manufactured to meet strict enterprise standards for performance, reliability, and compatibility.

Platform Qualification

Enterprise memory modules undergo extensive qualification on a wide range of server platforms. The Hynix HMCGM4MEBRB232N category is designed to meet these requirements, ensuring interoperability and consistent behavior across supported systems. Long-term availability and controlled lifecycle management make this category suitable for enterprise deployments that require configuration stability over multiple years.

Scalable Foundation for Future Enterprise Memory Needs

As enterprise workloads continue to grow in scale and complexity, memory subsystems must evolve to meet increasing demands. The high capacity, DDR5 architecture, and robust ECC features of the Hynix HMCGM4MEBRB232N category provide a scalable foundation for next-generation enterprise computing. This category supports organizations in building reliable, high-capacity, and future-ready platforms capable of adapting to evolving business and technology requirements.