HMCGM4MHBRB258N Hynix 96GB DDR5 6400MHz PC5-51200 ECC 288-Pin Ram

Highlights of Hynix HMCGM4MHBRB258N 96GB 6400MHz Memory

The Hynix HMCGM4MHBRB258N 96GB DDR5 memory module is designed for high-performance servers and data centers that require ultra-fast memory, large capacity, and enterprise-grade reliability. With advanced DDR5 SDRAM technology, this RDIMM delivers optimized performance for mission-critical workloads and virtualization environments.

General Information

• Manufacturer: SK Hynix
• Part Number: HMCGM4MHBRB258N
• Product Type: Server Memory Module
• Sub Type: DDR5 6400MHz / PC5-51200

Technical Specifications

• Total Capacity: 96GB
• Module Quantity: 1 Module
• Rank: Dual Rank (2Rx4)
• Form Factor: 288-Pin DIMM
• Memory Speed: 6400MHz
• Memory Standard: DDR5-6400 / PC5-51200
• Operating Voltage: 1.1V
• CAS Latency: CL52

Reliability and Data Integrity

• Error Checking: ECC (Error-Correcting Code)
• Signal Processing: Registered (RDIMM)
• Minimizes data corruption and system downtime

Physical Characteristics

• Form Factor: 288-Pin DIMM
• Length: 8 inches
• Width: 2 inches
• Thickness: 500 mil
• Shipping Weight: 0.20 lb

Key Features and Benefits

• 96GB high-capacity DDR5 memory module for servers
• DDR5-6400MHz speed with PC5-51200 bandwidth
• ECC support for superior data accuracy
• Registered RDIMM for enterprise reliability
• Dual-rank 2Rx4 design for balanced performance
• Low-voltage 1.1V operation for energy efficiency

Overview of Hynix HMCGM4MHBRB258N DDR5 PC5-51200 Ram

The Hynix HMCGM4MHBRB258N 96GB DDR5 6400MHz PC5-51200 ECC Registered CL52 Dual Rank 1.1V 288-Pin Memory Module is part of the high-performance enterprise DDR5 ECC RDIMM memory category designed for modern server and data center environments. This category addresses the growing demands for memory bandwidth, high capacity, energy efficiency, and data integrity in mission-critical systems such as cloud infrastructure, virtualization clusters, AI workloads, in-memory databases, and analytics platforms. DDR5 ECC Registered memory modules like the HMCGM4MHBRB258N combine very high transfer rates with large module capacity, enabling enterprise servers to scale memory effectively while maintaining reliability and system stability.

Role of DDR5 ECC Registered Memory in Server Architectures

Modern server architectures emphasize balanced compute-to-memory ratios to maximize overall system performance. The HMCGM4MHBRB258N category provides large memory capacity per DIMM, allowing servers to populate fewer slots while achieving substantial memory footprints. Registered DIMM architecture ensures signal buffering, which reduces electrical load on the memory controller and maintains stability when multiple modules are deployed per memory channel. This combination of capacity and stability is crucial for enterprise servers that operate continuously under sustained load, supporting virtualized workloads, large databases, real-time analytics, and high-performance computing tasks without degradation in memory performance.

Category Positioning Within DDR5 PC5-51200 Memory Segments

Within the DDR5 ecosystem, PC5-51200 memory represents one of the highest standardized bandwidth tiers available for enterprise systems. The HMCGM4MHBRB258N category occupies this segment, providing fully validated ECC Registered performance that differentiates it from consumer-oriented or unbuffered DDR5 memory. Its positioning makes it ideal for high-demand enterprise environments where reliability, bandwidth, and density are equally important. Organizations deploying servers with PC5-51200 DDR5 memory can expect consistent performance and scalability for complex workloads that involve large-scale virtualization, in-memory databases, AI inference, and large-scale analytics.

DDR5 SDRAM Architectural and Enterprise Benefits

DDR5 introduces several architectural enhancements over previous memory generations, including increased bank groups, larger internal burst lengths, improved refresh management, and dual independent 32-bit sub-channels. The Hynix HMCGM4MHBRB258N leverages these improvements to deliver higher memory throughput, reduced latency under concurrent memory accesses, and enhanced overall efficiency. These enhancements improve parallelism, allowing multiple memory transactions to occur simultaneously without significant contention. As multi-core processors continue to grow in core count, this capability becomes critical to ensure that memory does not become a performance bottleneck.

Dual Independent 32-Bit Sub-Channel Design

Each DDR5 DIMM is split into two independent 32-bit sub-channels, allowing concurrent memory operations within a single module. The HMCGM4MHBRB258N takes advantage of this architecture, increasing effective bandwidth utilization and reducing wait times during simultaneous multi-threaded workloads. This sub-channel architecture is particularly advantageous in cloud computing and virtualized environments where multiple workloads share memory resources concurrently, ensuring high responsiveness and throughput for all applications running on the platform.

Signal Integrity at 6400MHz

Operating at 6400MHz requires precise engineering to maintain signal integrity and ensure reliable data transfer. The HMCGM4MHBRB258N category uses high-quality PCB materials, carefully optimized trace layouts, and strict impedance control to deliver consistent performance even at very high frequencies. These design features ensure that enterprise servers can operate continuously under heavy workloads without experiencing data errors or signal degradation, which is essential for mission-critical applications.

DDR5-6400 Performance Characteristics Bandwidth

The 6400MHz operating speed of the Hynix HMCGM4MHBRB258N corresponds to a PC5-51200 bandwidth rating, providing up to 51.2GB/s of theoretical peak bandwidth per module. This high throughput enables faster memory access for processors, reducing idle cycles and improving overall system efficiency for bandwidth-intensive workloads such as real-time analytics, large-scale virtualization, and in-memory databases.

Scalable Bandwidth Across Multi-Channel Server Architectures

Enterprise processors support multiple memory channels per socket, allowing total system bandwidth to scale as additional DIMMs are installed. The HMCGM4MHBRB258N is optimized for balanced channel population, ensuring even bandwidth distribution and predictable performance across all channels. This capability is essential for dual-socket and multi-socket servers used in data centers, AI clusters, and high-performance computing systems where memory throughput directly affects application performance.

Latency Characteristics and CL52 Timing

The CL52 timing specification reflects the balance required to achieve high frequencies while maintaining consistent latency characteristics. Although higher frequencies can slightly increase absolute latency, the HMCGM4MHBRB258N’s overall performance is improved due to higher data transfer rates, resulting in net gains for workloads that rely on memory throughput. Predictable latency is critical in enterprise applications that require deterministic performance, such as transactional databases, ERP systems, and cloud infrastructure services.

High-Density 96GB Memory Capacity Advantages

The 96GB module capacity of the Hynix HMCGM4MHBRB258N allows servers to reach very large memory footprints with fewer physical DIMMs. This reduces system complexity, improves airflow within chassis, and lowers per-gigabyte power consumption, which is especially beneficial in high-density rack deployments.

Cloud Computing

In virtualized environments, memory is often the limiting factor for the number of virtual machines or containers that can run concurrently. The HMCGM4MHBRB258N provides sufficient memory per DIMM to maximize consolidation ratios while maintaining performance isolation between workloads. This enables cloud service providers and enterprises running private cloud infrastructure to achieve high efficiency and utilization.

In-Memory Databases and Analytics Workloads

In-memory databases and analytics engines rely heavily on memory capacity to store large datasets directly in RAM, minimizing access to slower storage. The 96GB capacity of this category reduces dependency on disk I/O, resulting in faster query response times and improved real-time analytics performance. These modules are particularly suited for high-frequency trading, recommendation engines, financial analytics, and real-time monitoring systems.

ECC Protection and Registered DIMM Reliability

Error-correcting code (ECC) memory is essential for enterprise-grade reliability. The Hynix HMCGM4MHBRB258N supports ECC, allowing detection and correction of single-bit memory errors and detection of multi-bit faults. This functionality protects critical data and ensures that server systems maintain high availability and operational continuity.

Importance of ECC in Continuous Enterprise Operations

Enterprise servers typically operate continuously for extended periods. ECC functionality mitigates the risk of transient memory errors caused by electrical noise, environmental factors, or component aging, preserving data accuracy and preventing unplanned downtime.

Registered DIMM Signal Buffering and Stability

The registered DIMM design buffers command and address signals, reducing the electrical load on the memory controller. This allows servers to deploy high-density memory configurations without signal degradation, maintaining stability and predictability even under heavy workloads.

1.1V DDR5 Operation

The HMCGM4MHBRB258N operates at a nominal voltage of 1.1V, reflecting DDR5’s improved power efficiency compared to previous generations. Lower operating voltage reduces overall power consumption and heat generation, critical for dense server deployments where thermal management and energy costs are significant considerations.

On-Module Features

DDR5 incorporates on-module power management to improve voltage regulation and reduce electrical noise. The HMCGM4MHBRB258N benefits from this design by delivering stable operation at high frequencies while optimizing energy efficiency across workloads.

Thermal Stability in High-Density Deployments

High-capacity, high-frequency memory modules can generate significant heat. The HMCGM4MHBRB258N is engineered to operate reliably under sustained load while remaining within enterprise thermal specifications, supporting continuous operation in data center environments.

Platform Enterprise Validation

Enterprise memory must be validated across multiple server platforms to ensure predictable performance. The Hynix HMCGM4MHBRB258N is fully qualified for use with contemporary server CPUs and chipsets that support DDR5 ECC RDIMM memory, simplifying deployment and minimizing integration risk.

Multi-Processor Server Configurations

High-performance servers often utilize dual-socket or multi-socket configurations. The HMCGM4MHBRB258N’s dual-rank ECC Registered design ensures optimal performance and memory channel balance in these environments, allowing processors to access data efficiently across all channels.

Consistency and Supply Reliability

Enterprise deployments require predictable hardware availability over extended periods. Hynix provides controlled manufacturing and long-term supply for the HMCGM4MHBRB258N category, allowing organizations to maintain consistent server configurations, simplify spare parts management, and plan capacity expansions.

Hynix Quality Assurance and Enterprise Standards

Hynix is a leading manufacturer of DRAM for enterprise, cloud, and high-performance computing markets. The HMCGM4MHBRB258N category reflects the company’s commitment to quality, reliability, and consistency, with modules subjected to extensive validation, stress testing, and platform compatibility verification to meet rigorous enterprise requirements.

Stress Testing and Reliability Verification

Each module undergoes rigorous thermal, electrical, and functional testing to ensure stable operation under extreme conditions. The HMCGM4MHBRB258N category delivers consistent performance over extended periods, reducing operational risk and ensuring uptime for mission-critical applications.

Memory Foundation

The high bandwidth, large capacity, energy efficiency, ECC protection, and dual-rank design of the HMCGM4MHBRB258N category provide a scalable and future-ready memory foundation. Organizations can deploy this memory to support growing data workloads, expanded virtualization footprints, AI/ML inference, and advanced analytics without compromising system reliability or performance.