HMCGM4MHBRB259N Hynix 96GB DDR5-6400MHz PC5-51200 ECC 288-Pin Ram

Highlights of Hynix HMCGM4MHBRB259N 96GB DDR5 ECC Ram

The Hynix HMCGM4MHBRB259N 96GB DDR5 memory module is engineered for enterprise servers and data centers that demand exceptional speed, high density, and rock-solid reliability. Built on advanced DDR5 SDRAM architecture, this registered ECC RDIMM delivers consistent performance for modern workloads such as virtualization, cloud computing, and high-performance analytics.

General Information

• Manufacturer: SK Hynix
• Part Number: HMCGM4MHBRB259N
• Product Type: Server Memory Module
• Sub Type: DDR5 6400MHz / PC5-51200

Technical Specifications

• Total Memory Size: 96GB
• Module Quantity: 1 x 96GB
• Rank Configuration: Dual Rank (2Rx4)
• Form Factor: 288-Pin DIMM
• Memory Speed: 6400MHz
• Memory Standard: DDR5 6400MHz / PC5-51200
• Operating Voltage: 1.1V
• CAS Latency: CL52

Reliability & Data Protection

• Error Checking: ECC (Error-Correcting Code)
• Signal Processing: Registered (RDIMM)
• Enhanced stability and reduced risk of data corruption

Physical Characteristics

• Form Factor: 288-Pin DIMM
• Length: 8 inches
• Width: 2 inches
• Thickness: 500 mil
• Shipping Weight: 0.20 lb

Key Features & Highlights

• 96GB high-capacity DDR5 server memory
• DDR5-6400MHz speed with PC5-51200 bandwidth
• ECC support for maximum data integrity
• Registered RDIMM for enterprise reliability
• Dual-rank 2Rx4 architecture for balanced performance
• Low-voltage 1.1V operation for energy-efficient servers

Overview of Hynix HMCGM4MHBRB259N PC5-51200 ECC Ram

The Hynix HMCGM4MHBRB259N 96GB DDR5-6400MHz PC5-51200 ECC Registered CL52 Dual Rank 1.1V 288-Pin Memory Module belongs to the highest tier of enterprise DDR5 ECC RDIMM server memory solutions engineered for modern data centers, cloud infrastructures, and mission-critical enterprise computing environments. This category is defined by its ability to deliver extreme memory bandwidth, very high module density, robust data protection, and long-term operational stability under continuous workloads. DDR5 ECC Registered memory modules in this category are designed to meet the demands of next-generation server processors that feature increased core counts, higher thread concurrency, and wider memory interfaces.

Strategic Role of DDR5 ECC RDIMM Memory in Modern Servers

Memory performance and scalability have become as critical as CPU performance in modern servers. The HMCGM4MHBRB259N category enables enterprise platforms to deploy large memory capacities per socket while sustaining extremely high transfer rates. The registered DIMM architecture buffers command and address signals, significantly reducing electrical stress on the memory controller and enabling stable operation when all memory channels are fully populated. This design is essential for enterprise servers operating 24/7 under sustained load, supporting virtualization, large-scale databases, analytics engines, artificial intelligence inference, and high-performance computing workloads without performance degradation.

Positioning Within the DDR5 PC5-51200 Performance Segment

PC5-51200 DDR5 memory represents one of the fastest standardized memory classes available for enterprise platforms. The HMCGM4MHBRB259N category occupies this segment as a fully validated ECC Registered solution, setting it apart from consumer-grade or unbuffered DDR5 memory. This positioning ensures that organizations can deploy maximum bandwidth memory without sacrificing reliability, data integrity, or platform compatibility. This category is particularly well suited for enterprise environments where predictable performance, scalability, and uptime are critical business requirements.

DDR5 SDRAM Architectural Evolution and Enterprise Advantages

DDR5 SDRAM introduces substantial architectural improvements over DDR4, all of which are leveraged by the Hynix HMCGM4MHBRB259N category. These enhancements are designed to increase memory parallelism, improve bandwidth efficiency, and optimize power usage while supporting higher module capacities. Key DDR5 improvements include increased bank and bank group counts, longer burst lengths, enhanced command scheduling, and refined refresh operations. Together, these features allow servers to handle a higher volume of concurrent memory transactions, reducing contention and improving overall throughput in multi-core and multi-threaded environments.

Dual Independent 32-Bit Sub-Channel Architecture

Each DDR5 DIMM is divided into two independent 32-bit sub-channels, allowing multiple memory operations to occur simultaneously within a single module. The HMCGM4MHBRB259N category benefits from this architecture by improving concurrency and reducing memory access latency under parallel workloads. This capability is especially valuable in cloud and virtualized environments where numerous workloads access memory simultaneously, ensuring consistent responsiveness and efficient bandwidth utilization.

Signal Integrity at 6400MHz

Operating reliably at 6400MHz requires advanced signal integrity engineering. The HMCGM4MHBRB259N category employs premium PCB materials, optimized trace routing, and strict impedance control to ensure stable data transmission at very high speeds. These engineering practices ensure long-term reliability and error-free operation in enterprise servers that run continuously under heavy memory utilization.

DDR5-6400 Performance Profile and PC5-51200 Bandwidth

The DDR5-6400 operating speed of the Hynix HMCGM4MHBRB259N corresponds to a PC5-51200 bandwidth rating, delivering up to 51.2GB/s of theoretical peak bandwidth per module. This exceptional throughput allows processors to access data rapidly, reducing idle cycles and improving overall system efficiency. High memory bandwidth is essential for workloads that involve frequent data movement, such as real-time analytics, high-frequency trading, large-scale simulations, machine learning inference, and in-memory data processing.

Bandwidth Scaling Across Multi-Channel Server Architectures

Enterprise processors support multiple memory channels per socket, allowing total system bandwidth to scale as channels are populated. The HMCGM4MHBRB259N category is optimized for balanced memory channel configurations, ensuring uniform bandwidth distribution and predictable performance across all channels. This scalability is critical for dual-socket and multi-socket servers deployed in data centers, AI clusters, and high-performance computing environments.

Latency Behavior and CL52 Timing

The CL52 timing specification reflects the balance required to achieve extremely high frequencies while maintaining stable latency characteristics. While absolute latency values increase with frequency, the higher data transfer rate often results in net performance gains for bandwidth-sensitive enterprise workloads. The HMCGM4MHBRB259N category is tuned to align with server memory controller requirements, delivering consistent and deterministic performance across diverse applications.

96GB High-Density Dual Rank Memory Capacity

The 96GB capacity of the Hynix HMCGM4MHBRB259N category enables servers to achieve very large memory footprints using fewer DIMM slots. High-density modules simplify system design, reduce component count, and improve airflow within server enclosures. Dual rank architecture enhances memory interleaving, improving effective bandwidth utilization and access efficiency across multi-channel memory subsystems.

Cloud Infrastructure Enablement

Virtualized environments rely heavily on available memory to support multiple virtual machines and containers. The HMCGM4MHBRB259N category allows higher consolidation ratios by providing substantial memory capacity per slot, reducing contention and ensuring consistent performance for each workload. This capability is essential for cloud service providers and enterprises operating private or hybrid cloud platforms.

In-Memory Databases and Real-Time Analytics

In-memory databases and analytics engines benefit significantly from large memory capacities that allow datasets to remain resident in RAM. The 96GB capacity of this category reduces reliance on slower storage tiers, improving query performance and enabling real-time data analysis. This makes the HMCGM4MHBRB259N category suitable for financial analytics, recommendation systems, fraud detection, and enterprise reporting platforms.

ECC Data Integrity and Registered DIMM Reliability

Error-correcting code functionality is a defining characteristic of enterprise-grade memory. The Hynix HMCGM4MHBRB259N category includes full ECC support, enabling detection and correction of single-bit errors and detection of multi-bit faults before they affect system behavior. ECC protection ensures data integrity, system stability, and operational continuity in environments where even minor data corruption can have significant consequences.

ECC Importance in Continuous Operation Environments

Enterprise servers often operate continuously for years, increasing exposure to transient memory errors caused by electrical noise, environmental radiation, or component aging. ECC functionality mitigates these risks, preserving data accuracy and preventing system crashes or silent data corruption. This reliability is critical for industries such as finance, healthcare, telecommunications, and government infrastructure.

Registered DIMM Signal Buffering and Scalability

The registered DIMM architecture buffers command and address signals, reducing electrical load on the memory controller. This enables stable operation with high-capacity modules installed across all memory channels. The HMCGM4MHBRB259N category leverages this architecture to support scalable memory configurations without compromising signal integrity or performance.

1.1V DDR5 Operating Voltage

The Hynix HMCGM4MHBRB259N category operates at a nominal voltage of 1.1V, reflecting DDR5’s improved energy efficiency compared to earlier memory generations. Lower operating voltage reduces power consumption and heat generation, which is critical in dense data center deployments. Improved power efficiency contributes to lower operating costs and supports sustainable data center operations.

On-Module Integration

DDR5 memory incorporates on-module power management to deliver precise voltage regulation and reduce electrical noise. The HMCGM4MHBRB259N category benefits from this architecture by maintaining stable operation at very high frequencies while optimizing energy efficiency. This design also simplifies motherboard power delivery and enhances overall platform reliability.

Thermal Stability Under Sustained Enterprise Workloads

High-frequency, high-capacity memory modules must maintain thermal stability under sustained load. The HMCGM4MHBRB259N category is engineered to operate within enterprise thermal specifications, ensuring consistent performance without throttling. This thermal stability is essential for data centers with constrained cooling capacity.

Enterprise Ecosystem Integration

Enterprise memory modules must be validated across a wide range of server platforms to ensure predictable behavior. The Hynix HMCGM4MHBRB259N category is designed to comply with industry standards and is qualified for use with modern server processors and chipsets that support DDR5 ECC RDIMM memory. This compatibility reduces deployment risk and simplifies integration into existing infrastructures.

Multi-Socket Server Architectures

High-performance enterprise servers frequently utilize dual-socket or multi-socket configurations. The HMCGM4MHBRB259N category supports these architectures by ensuring balanced memory channel population and efficient data access across processors. This support enables scalable performance in enterprise, cloud, and high-performance computing environments.

Long-Term Supply Stability

Enterprise deployments often require consistent hardware configurations over extended periods. The HMCGM4MHBRB259N category benefits from controlled manufacturing processes and long-term availability, allowing organizations to maintain homogeneous server fleets and simplify maintenance planning.

Hynix Manufacturing Excellence and Quality Assurance

Hynix is a globally recognized leader in DRAM manufacturing, supplying memory solutions to enterprise, cloud, and high-performance computing markets. The HMCGM4MHBRB259N category reflects Hynix’s commitment to quality, reliability, and technological leadership. Each module undergoes rigorous validation, stress testing, and platform compatibility verification to ensure compliance with enterprise performance and reliability standards.

Enterprise Validation and Stress Testing Processes

Memory modules in this category are subjected to extensive thermal cycling, electrical margin testing, and long-duration workload validation. These processes ensure that the HMCGM4MHBRB259N category delivers consistent performance throughout its operational lifespan.

Memory Foundation for Enterprise Growth

The combination of extreme bandwidth, large capacity, ECC protection, dual rank architecture, and energy efficiency makes the Hynix HMCGM4MHBRB259N category a future-ready memory foundation. It supports organizations as they expand data-intensive workloads, adopt new computing paradigms, and prepare for next-generation server architectures.