HMCGM4MHBRB261N Hynix DDR5 6400MT/s 96GB PC5-51200 SDRAM ECC Ram
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Highlights of Hynix HMCGM4MHBRB261N 96GB DDR5 SDRAM Ram
The Hynix HMCGM4MHBRB261N 96GB DDR5 RDIMM memory module is designed for high-performance enterprise servers that require maximum bandwidth, reliability, and scalability. Built with next-generation DDR5 SDRAM technology, this module delivers exceptional speed and stability for mission-critical workloads.
General Information
- Manufacturer: SK Hynix
- Part Number: HMCGM4MHBRB261N
- Product Type: Server Memory Module
- Sub Type: DDR5 6400MT/s / PC5-51200
Technical Specifications
- Total Capacity: 96GB
- Module Configuration: 1 x 96GB
- Rank Structure: Dual Rank (2Rx4)
- Form Factor: 288-Pin RDIMM
- Bus Speed: 6400MT/s DDR5
- Memory Standard: PC5-51200
- CAS Latency: CL46
Reliability & Data Integrity
- Error Checking: ECC (Error-Correcting Code)
- Signal Processing: Registered
- Enhanced protection against memory errors
Physical Characteristics
- Form Factor: 288-Pin RDIMM
- Shipping Dimensions: 1.00 in (H) x 6.75 in (D)
- Shipping Weight: 0.20 lb
Server Compatibility
- PowerEdge R770
- PowerEdge R670
Key Features & Highlights
- 96GB high-density DDR5 server memory
- DDR5-6400MT/s speed with PC5-51200 bandwidth
- Dual-rank 2Rx4 architecture for balanced performance
- ECC support for superior data integrity
- Registered RDIMM for enterprise-grade stability
- Optimized for next-generation Dell PowerEdge platforms
Overview of Hynix HMCGM4MHBRB261N DDR5 PC5-51200 Ram
The Hynix HMCGM4MHBRB261N 96GB DDR5 6400MT/s PC5-51200 CL46 SDRAM 288-Pin RDIMM ECC Memory Module belongs to the premium enterprise DDR5 registered memory category engineered for next-generation server platforms. This category focuses on delivering extremely high memory bandwidth, large module density, and uncompromising data integrity for mission-critical computing environments. It is specifically designed to support modern multi-core processors that rely on wide memory channels and high-speed data access to maximize performance efficiency. Enterprise DDR5 ECC RDIMM modules in this category are optimized for workloads that demand consistent throughput, low latency under concurrency, and long-term operational stability.
Role of Registered DDR5 Memory in Server Infrastructure
Registered DIMM memory plays a critical role in large-scale server deployments by buffering command and address signals between the memory controller and the DRAM devices. The HMCGM4MHBRB261N category benefits from this architecture by enabling stable operation with high-capacity modules installed across all memory channels. This allows enterprise systems to scale memory capacity without compromising signal integrity or system reliability. As server architectures evolve toward higher core counts and greater parallelism, the need for reliable, high-speed registered memory becomes increasingly important. This category ensures that memory subsystems can keep pace with processor advancements.
Positioning Within PC5-51200 Performance Tier
The PC5-51200 designation represents one of the highest standardized bandwidth tiers for DDR5 server memory. The Hynix HMCGM4MHBRB261N category is positioned within this tier to provide sustained, real-world performance rather than short-duration peak speeds. Its design prioritizes consistent throughput, predictable latency, and compatibility with enterprise-grade platforms.
DDR5 SDRAM Architecture and Technical Advancements
DDR5 SDRAM introduces a wide array of architectural enhancements over previous memory generations, all of which are integral to the HMCGM4MHBRB261N category. These enhancements include increased bank counts, expanded bank group structures, longer burst lengths, improved command efficiency, and more sophisticated refresh algorithms. Together, these features significantly improve memory concurrency and effective bandwidth utilization. The DDR5 architecture is designed to support higher operating frequencies while maintaining stability and energy efficiency. This makes it particularly suitable for enterprise environments where systems operate continuously under heavy memory workloads.
Dual 32-Bit Sub-Channel Design and Parallelism
Each DDR5 RDIMM module is divided into two independent 32-bit sub-channels, allowing multiple memory transactions to occur simultaneously. The HMCGM4MHBRB261N category leverages this design to reduce access contention and improve overall memory efficiency in multi-threaded environments. This sub-channel architecture is especially beneficial for virtualization platforms, database servers, and microservices architectures where numerous processes access memory concurrently.
Signal Integrity at Extreme Frequencies
Operating at 6400MT/s requires precise electrical engineering to maintain signal clarity and timing accuracy. The HMCGM4MHBRB261N category incorporates advanced PCB materials, optimized trace layouts, and stringent impedance control to ensure reliable data transmission at high speeds. These design elements are essential for enterprise servers that demand long-term stability under sustained memory load.
DDR5-6400MT/s Performance and Bandwidth Characteristics
The 6400MT/s data rate of the Hynix HMCGM4MHBRB261N corresponds to a PC5-51200 bandwidth rating, delivering up to 51.2GB/s of theoretical peak bandwidth per module. This high bandwidth reduces memory access bottlenecks and allows processors to operate closer to their maximum computational capacity. High-bandwidth memory is critical for data-intensive workloads such as real-time analytics, large-scale simulations, AI inference, and high-frequency transaction processing.
Scaling Memory Throughput Across Multiple Channels
Modern server processors feature multiple memory channels per socket, enabling total system bandwidth to scale as channels are populated. The HMCGM4MHBRB261N category is optimized for balanced channel configurations, ensuring uniform throughput and consistent performance across all channels. This scalability supports enterprise servers deployed in dual-socket and multi-socket configurations.
CL46 Timing Profile and Latency Balance
The CL46 timing specification represents a carefully engineered balance between very high operating frequency and effective access latency. While higher frequencies typically introduce additional latency, the HMCGM4MHBRB261N category minimizes this impact through optimized timing parameters and internal architecture improvements. This balance is essential for workloads that are sensitive to both bandwidth and latency.
96GB High-Density Module Capacity and 2Rx4 Architecture
The 96GB capacity of the Hynix HMCGM4MHBRB261N category enables servers to achieve very large memory footprints using fewer DIMM slots. High-density modules reduce system complexity, improve airflow, and simplify memory expansion planning. The 2Rx4 dual-rank architecture enhances memory interleaving, allowing more efficient utilization of memory channels and improving sustained throughput under load.
Cloud Computing
Virtualized environments place heavy demands on memory capacity and performance. The HMCGM4MHBRB261N category supports higher virtual machine density by providing ample memory per slot, reducing contention and ensuring predictable performance for each workload. This makes it well suited for private clouds, hybrid cloud infrastructures, and enterprise virtualization platforms.
In-Memory Database and Analytics
In-memory databases and analytics engines rely on large RAM capacities to store datasets entirely in memory. The 96GB capacity of this category minimizes reliance on slower storage tiers, enabling faster query execution and real-time data processing. This capability benefits industries such as finance, telecommunications, healthcare, and e-commerce.
ECC Protection and Data Integrity Assurance
Error-correcting code functionality is a defining feature of enterprise-grade memory. The Hynix HMCGM4MHBRB261N category includes full ECC support, enabling detection and correction of single-bit errors and detection of multi-bit errors before they affect system operation. ECC protection is essential for preventing silent data corruption and maintaining data accuracy in long-running server applications.
Reliability in Continuous Operation Environments
Enterprise servers often operate continuously for extended periods, increasing exposure to transient memory errors caused by electrical noise or environmental factors. ECC functionality mitigates these risks, preserving system stability and data integrity. This reliability is critical for applications where downtime or data corruption can have severe consequences.
Registered DIMM Signal Buffering Benefits
The registered DIMM design buffers command and address signals, reducing electrical stress on the memory controller. This allows systems to populate all memory slots with high-capacity modules while maintaining stable operation. The HMCGM4MHBRB261N category leverages this architecture to support scalable memory configurations.
DDR5 Voltage Management
DDR5 memory introduces improved power efficiency compared to previous generations, and the HMCGM4MHBRB261N category is designed to take full advantage of these improvements. Operating at optimized voltage levels, this category delivers high performance while reducing overall power consumption. Lower power consumption contributes to reduced operational costs and improved thermal management in dense data center environments.
On-Module Integration
DDR5 RDIMM modules integrate on-module power management components that provide precise voltage regulation and reduce electrical noise. The HMCGM4MHBRB261N category benefits from this integration, ensuring stable operation at high frequencies and improving overall system reliability. This design also simplifies motherboard power delivery requirements.
Thermal Stability Under Sustained Load
High-capacity, high-speed memory modules generate heat during sustained operation. The HMCGM4MHBRB261N category is engineered to operate within enterprise thermal specifications, ensuring consistent performance without throttling. This thermal stability supports deployment in high-density server racks.
Enterprise Validation
Enterprise memory must be validated across a wide range of server platforms to ensure predictable behavior. The Hynix HMCGM4MHBRB261N category adheres to industry standards and is qualified for use with modern server processors and chipsets that support DDR5 ECC RDIMM memory. This compatibility simplifies deployment and reduces integration risk.
Multi-Socket Server Designs
Many enterprise servers utilize dual-socket or multi-socket architectures to scale processing power. The HMCGM4MHBRB261N category supports these designs by enabling balanced memory population and efficient data access across processors. This ensures scalable performance for demanding enterprise workloads.
Availability Consistency
Enterprise deployments often require consistent hardware configurations over extended lifecycles. The HMCGM4MHBRB261N category benefits from controlled manufacturing processes and long-term supply commitments, allowing organizations to maintain homogeneous server environments.
Hynix Engineering Expertise and Quality Assurance
Hynix is a globally recognized leader in DRAM manufacturing, supplying memory solutions to enterprise, cloud, and high-performance computing markets. The HMCGM4MHBRB261N category reflects this expertise through rigorous design, testing, and validation processes. Each module undergoes extensive quality assurance to ensure compliance with enterprise reliability and performance standards.
Enterprise-Grade Stress Testing and Validation
Memory modules in this category are subjected to thermal cycling, voltage margin testing, and prolonged workload validation. These tests ensure that the HMCGM4MHBRB261N category delivers consistent performance throughout its operational lifespan.
Memory Foundation for Data-Driven Growth
The combination of extreme bandwidth, large capacity, ECC protection, registered architecture, optimized latency, and power efficiency makes the Hynix HMCGM4MHBRB261N category a future-ready memory foundation. It supports enterprise growth as organizations adopt advanced analytics, artificial intelligence, and next-generation computing platforms.
