HMCGM4MHBRB263N Hynix 96GB DDR5 6400MHz PC5-51200 288-Pin ECC Ram

Highlights of Hynix HMCGM4MHBRB263N 96GB 6400MHz Memory

The Hynix HMCGM4MHBRB263N is a high-density 96GB DDR5 server memory module engineered for enterprise systems that require extreme bandwidth, dependable stability, and energy-efficient performance. Designed with advanced DDR5 SDRAM technology, this registered ECC module supports modern data center and high-performance computing workloads.

General Information

• Manufacturer: SK Hynix
• Part Number: HMCGM4MHBRB263N
• Product Type: Server Memory Module
• Interface: DDR5 6400MHz / PC5-51200

Technical Specifications

• Total Capacity: 96GB
• Module Quantity: 1 x 96GB
• Rank Design: Dual Rank
• Form Factor: 288-Pin DIMM
• Memory Speed: 6400MHz
• Memory Standard: DDR5-6400 / PC5-51200
• Operating Voltage: 1.1V
• CAS Latency: CL52

Reliability & Data Protection

• Error Checking: ECC (Error-Correcting Code)
• Signal Processing: Registered
• Minimizes memory errors and improves system uptime

Physical Characteristics

• Form Factor: 288-Pin DIMM
• Length: 8 inches
• Width: 2 inches
• Thickness: 500 mil
• Shipping Weight: 0.20 lb

Key Features & Highlights

• 96GB high-capacity DDR5 server memory
• DDR5-6400MHz speed with PC5-51200 bandwidth
• Dual-rank architecture for balanced performance
• ECC support for enhanced data integrity
• Registered RDIMM for enterprise reliability
• Low-voltage 1.1V operation for energy efficiency

Overview of Hynix HMCGM4MHBRB263N DDR5 6400MHz Memory

The Hynix HMCGM4MHBRB263N 96GB DDR5 6400MHz PC5-51200 ECC Reg CL52 Dual Rank 1.1V 288-Pin Memory Module is positioned within the highest tier of enterprise DDR5 registered memory solutions. This category is purpose-built for modern server platforms that demand extreme bandwidth, high memory density, and uncompromising data integrity. It represents a convergence of next-generation DDR5 technology, enterprise-grade reliability mechanisms, and advanced electrical design required for sustained high-frequency operation in mission-critical environments.

Role of Registered DDR5 Memory in Modern Servers

Registered DIMM memory plays a critical role in maintaining signal integrity and stability as memory capacities and operating frequencies increase. The HMCGM4MHBRB263N category leverages registered buffering to isolate the memory controller from the electrical load of multiple DRAM devices. This buffering enables servers to populate all memory slots with high-capacity modules while preserving reliable operation at 6400MHz data rates. As processors continue to scale core counts and memory channels, registered DDR5 memory becomes essential for achieving balanced performance across the entire system. This category ensures that memory subsystems can scale alongside CPU advancements without introducing instability or performance degradation.

Positioning Within the PC5-51200 Performance Segment

PC5-51200 defines a high-bandwidth DDR5 memory class capable of delivering up to 51.2GB/s of theoretical bandwidth per module. The Hynix HMCGM4MHBRB263N category is engineered to operate reliably within this performance envelope, providing sustained throughput rather than transient peak speeds. This makes it suitable for enterprise workloads that require predictable, long-duration performance.

DDR5 SDRAM Architecture and Evolution

DDR5 SDRAM introduces substantial architectural enhancements over DDR4, all of which are integral to the HMCGM4MHBRB263N category. These enhancements include increased bank counts, improved bank group organization, longer burst lengths, and more efficient command scheduling. Together, these features enable greater parallelism and higher effective bandwidth utilization. The DDR5 architecture also incorporates enhanced error management, refined refresh mechanisms, and improved signaling techniques that support higher frequencies while maintaining stability. These advancements are critical for enterprise servers that operate continuously under heavy memory loads.

Dual 32-Bit Sub-Channel Design

Each DDR5 RDIMM module is divided into two independent 32-bit sub-channels, allowing multiple memory transactions to be processed concurrently. The HMCGM4MHBRB263N category benefits from this design by reducing access contention and improving efficiency in multi-threaded and multi-tenant environments. This sub-channel architecture is particularly advantageous for virtualization, containerized workloads, and microservices-based applications where memory access patterns are highly concurrent.

High-Frequency Operation

Operating at 6400MHz requires precise electrical engineering to maintain timing accuracy and signal clarity. The HMCGM4MHBRB263N category incorporates optimized PCB layouts, controlled impedance routing, and advanced materials to minimize signal degradation and crosstalk. These design choices are essential for ensuring long-term stability and consistent performance in enterprise servers deployed in dense data center environments.

DDR5-6400MHz Bandwidth and Performance Characteristics

The 6400MHz operating speed of the Hynix HMCGM4MHBRB263N corresponds to a PC5-51200 bandwidth rating, providing exceptional data transfer capability. This level of bandwidth is crucial for feeding modern multi-core processors with sufficient data to avoid bottlenecks and underutilization. High-bandwidth memory supports workloads such as real-time analytics, artificial intelligence inference, large-scale simulations, and high-throughput transaction processing, where memory access speed directly influences application performance.

Scalable Throughput Across Multiple Memory Channels

Enterprise processors feature multiple memory channels per socket, enabling aggregate system bandwidth to scale as channels are populated. The HMCGM4MHBRB263N category is designed for balanced channel population, ensuring uniform throughput and minimizing latency disparities across channels. This scalability is essential for dual-socket and multi-socket server configurations commonly used in enterprise and cloud environments.

CL52 Timing Profile and Latency

The CL52 timing specification reflects the balance required to achieve extremely high operating frequencies while maintaining manageable access latency. Although higher frequencies naturally introduce increased cycle counts, the HMCGM4MHBRB263N category mitigates latency impact through DDR5 architectural efficiencies and optimized internal timing. This balance ensures responsive performance for workloads that are sensitive to both bandwidth and latency.

96GB High-Density Capacity and Dual Rank Architecture

The 96GB capacity of the Hynix HMCGM4MHBRB263N category enables servers to achieve very large memory footprints using fewer DIMM slots. High-density modules simplify system design, improve airflow, and reduce the complexity associated with managing numerous lower-capacity modules. The dual rank architecture further enhances performance by enabling rank-level interleaving, which improves memory access efficiency and sustained throughput under heavy load.

Benefits for Consolidation

Virtualized environments demand large memory capacities to support multiple virtual machines simultaneously. The HMCGM4MHBRB263N category allows higher VM density per host while maintaining predictable performance, making it ideal for private cloud, hybrid cloud, and enterprise virtualization deployments. Higher memory density also reduces the number of physical servers required, lowering operational costs and power consumption.

In-Memory Databases and Analytics

In-memory databases and analytics platforms rely on large RAM capacities to store datasets entirely in memory. The 96GB capacity of this category minimizes reliance on slower storage tiers, enabling faster query execution and real-time data processing. This capability is particularly valuable in finance, telecommunications, healthcare, and e-commerce sectors.

ECC and Data Integrity

Error-correcting code functionality is a defining feature of enterprise memory. The Hynix HMCGM4MHBRB263N category incorporates full ECC support, enabling automatic detection and correction of single-bit memory errors and detection of multi-bit errors. ECC protection is essential for preventing silent data corruption, ensuring application accuracy, and maintaining system stability in long-running server environments.

Reliability in Continuous Operation Scenarios

Enterprise servers often operate continuously under high load, increasing exposure to transient memory errors caused by electrical noise, temperature fluctuations, or cosmic radiation. ECC functionality mitigates these risks, preserving data integrity and system uptime. This reliability is critical for applications where downtime or corrupted data can have severe financial or operational consequences.

Registered Signal Buffering Advantages

The registered DIMM design buffers command and address signals, reducing electrical stress on the memory controller. This enables stable operation with high-capacity modules installed across all slots, even at high frequencies. The HMCGM4MHBRB263N category leverages this architecture to support scalable and reliable memory configurations.

1.1V DDR5 Operation

DDR5 memory is designed to deliver higher performance with improved power efficiency. The HMCGM4MHBRB263N category operates at 1.1V, reducing overall power consumption compared to previous generations while delivering significantly higher bandwidth. Improved power efficiency contributes to lower operational costs and reduced thermal output in data center environments.

On-Module Integration

DDR5 RDIMM modules integrate on-module power management circuitry that provides precise voltage regulation and reduces electrical noise. The HMCGM4MHBRB263N category benefits from this integration by maintaining stable operation at high frequencies and improving overall system reliability. This design also simplifies motherboard power delivery requirements.

Thermal Stability Under Sustained Workloads

High-capacity, high-speed memory modules generate heat during prolonged operation. The HMCGM4MHBRB263N category is engineered to operate within enterprise thermal limits, ensuring consistent performance without throttling. This thermal stability supports deployment in high-density server racks and constrained data center environments.

Platform and Enterprise Validation

Enterprise memory must be compatible with a wide range of server platforms to ensure predictable deployment. The Hynix HMCGM4MHBRB263N category adheres to industry standards and is validated for use with modern server processors and chipsets that support DDR5 ECC RDIMM memory. This compatibility simplifies system integration and reduces deployment risk.

Multi-Socket Server Architectures

Many enterprise servers utilize dual-socket or multi-socket designs to scale processing power. The HMCGM4MHBRB263N category supports these architectures by enabling balanced memory population and efficient data access across processors. This ensures scalable performance for compute-intensive enterprise workloads.

Consistency and Enterprise Supply Assurance

Enterprise deployments often require consistent hardware configurations over extended lifecycles. The HMCGM4MHBRB263N category benefits from controlled manufacturing processes and long-term availability commitments, allowing organizations to maintain uniform server configurations.

Hynix Manufacturing Expertise and Quality Standards

Hynix is a global leader in DRAM manufacturing, supplying memory solutions for enterprise, cloud, and high-performance computing markets. The HMCGM4MHBRB263N category reflects this expertise through rigorous design, testing, and validation processes. Each module undergoes extensive quality assurance to ensure compliance with enterprise reliability and performance standards.

Comprehensive Testing and Validation Processes

Memory modules in this category are subjected to thermal cycling, voltage margin analysis, and prolonged workload testing. These processes ensure that the HMCGM4MHBRB263N category delivers consistent performance throughout its operational lifespan.

Memory Foundation for Data-Centric Growth

The combination of extreme bandwidth, high density, ECC protection, registered architecture, optimized latency, and power efficiency makes the Hynix HMCGM4MHBRB263N category a future-ready memory foundation. It supports enterprise growth as organizations adopt advanced analytics, artificial intelligence, and next-generation computing platforms.