HMCGM4MHBRB265N Hynix 96GB DDR5 6400MT/s PC5-51200 ECC SDRAM Ram

Highlights of Hynix HMCGM4MHBRB265N 96GB DDR5 SDRAM Ram

The Hynix HMCGM4MHBRB265N is a high-performance 96GB DDR5 server memory module built for enterprise environments that demand speed, reliability, and scalability. Featuring DDR5 SDRAM technology with ECC and registered signaling, this RDIMM is ideal for modern data centers and next-generation server platforms.

General Information

• Manufacturer: SK Hynix
• Part Number: HMCGM4MHBRB265N
• Product Type: Server Memory Module
• Sub Type: DDR5 6400MT/s / PC5-51200

Technical Specifications

• Total Storage Capacity: 96GB
• Module Configuration: 1 x 96GB
• Rank Structure: Dual Rank (2Rx4)
• Form Factor: 288-Pin RDIMM
• Bus Speed: 6400MT/s DDR5
• Memory Standard: PC5-51200
• CAS Latency: CL46

Reliability & Data Integrity

• Error Checking: ECC (Error-Correcting Code)
• Signal Processing: Registered
• Improved stability for large-capacity memory configurations

Physical Characteristics

• Form Factor: 288-Pin RDIMM
• Shipping Dimensions: 1.00 in (H) x 6.75 in (D)
• Shipping Weight: 0.20 lb

Server Compatibility

• PowerEdge R770
• PowerEdge R670

Key Features & Highlights

• 96GB high-capacity DDR5 server memory
• DDR5-6400MT/s speed with PC5-51200 bandwidth
• Dual-rank 2Rx4 design for balanced performance
• ECC support for enhanced data protection
• Registered RDIMM for enterprise reliability
• Optimized for modern Dell PowerEdge platforms

Overview of Hynix HMCGM4MHBRB265N DDR5 PC5-51200 Ram

The Hynix HMCGM4MHBRB265N 96GB DDR5 6400MT/s PC5-51200 2Rx4 ECC SDRAM 288-Pin RDIMM Memory Module is part of a high-performance enterprise memory category engineered to support the most demanding server and data center workloads. This category represents a convergence of ultra-high bandwidth DDR5 technology, large-capacity module density, registered signal buffering, and enterprise-grade error correction. It is designed for organizations that require consistent, predictable, and scalable memory performance across mission-critical computing environments. Enterprise DDR5 ECC RDIMM memory modules in this category are optimized for continuous operation, heavy multitasking, and large memory footprints.

Registered DIMM Architecture and Server-Class Stability

Registered DIMM memory introduces a register between the memory controller and the DRAM chips, buffering command and address signals. The HMCGM4MHBRB265N category leverages this architecture to significantly improve signal integrity, especially at very high operating frequencies such as 6400MT/s. This buffering allows servers to populate all memory slots with high-capacity modules without overwhelming the memory controller. In enterprise systems where memory channels are fully populated, registered memory is essential for maintaining stability, reducing electrical noise, and ensuring consistent timing behavior. This category is therefore well suited for large-scale server deployments that require maximum memory scalability.

Placement Within the PC5-51200 Performance Tier

The PC5-51200 classification identifies memory modules capable of delivering up to 51.2GB/s of theoretical bandwidth per module. The Hynix HMCGM4MHBRB265N category is engineered to operate reliably within this high-performance tier, delivering sustained throughput rather than short-lived peak performance. This positioning makes it ideal for enterprise workloads that require long-duration, high-intensity memory usage.

DDR5 SDRAM Architectural Enhancements

DDR5 SDRAM represents a major evolution in memory technology, introducing architectural enhancements that directly benefit enterprise workloads. The HMCGM4MHBRB265N category incorporates these advancements to deliver higher effective bandwidth, improved concurrency, and enhanced efficiency compared to previous generations. Key DDR5 improvements include increased bank counts, more flexible bank group organization, longer burst lengths, and refined refresh operations. These changes allow the memory subsystem to process more simultaneous requests, reducing contention and improving overall system responsiveness.

Dual 32-Bit Sub-Channel Design for Improved Parallelism

Each DDR5 RDIMM module is divided into two independent 32-bit sub-channels, enabling parallel processing of memory commands. The HMCGM4MHBRB265N category benefits from this design by allowing multiple memory transactions to occur concurrently, improving utilization of available bandwidth. This parallelism is particularly valuable in multi-threaded environments such as virtualization platforms, containerized applications, and distributed computing systems where numerous processes access memory simultaneously.

Signal Integrity Engineering at Extreme Data Rates

Operating reliably at 6400MT/s requires meticulous electrical engineering. The HMCGM4MHBRB265N category utilizes advanced PCB materials, optimized trace routing, and controlled impedance designs to minimize signal loss, crosstalk, and timing skew. These engineering considerations ensure that the memory module maintains stable operation over extended periods, even under sustained heavy workloads typical of enterprise servers.

DDR5-6400MT/s Bandwidth and Performance

The 6400MT/s operating speed of the Hynix HMCGM4MHBRB265N translates into a PC5-51200 bandwidth rating, offering exceptional data transfer rates. This high bandwidth enables processors to access data more quickly, reducing stalls and improving overall application performance. High-bandwidth memory is critical for workloads that process large volumes of data in real time, such as artificial intelligence inference, scientific simulations, financial modeling, and high-throughput transaction processing.

Memory Channel Scaling in Multi-Socket Systems

Modern enterprise processors feature multiple memory channels per socket, allowing total system bandwidth to scale with channel population. The HMCGM4MHBRB265N category is designed to deliver balanced performance across all channels, ensuring uniform throughput and minimizing latency inconsistencies. This scalability is essential for dual-socket and multi-socket servers used in data centers, where aggregate memory bandwidth directly impacts application scalability.

Latency Considerations and Timing

While extremely high frequencies can introduce additional latency in terms of clock cycles, the HMCGM4MHBRB265N category mitigates this through optimized timing parameters and DDR5 architectural efficiencies. The result is a balanced performance profile that delivers both high bandwidth and responsive memory access. This balance is important for workloads that are sensitive to latency as well as throughput.

96GB Module Density and 2Rx4 Dual Rank Configuration

The 96GB capacity of the Hynix HMCGM4MHBRB265N category enables servers to achieve very large memory capacities using fewer DIMM slots. High-density modules simplify system design, improve airflow, and reduce the number of components required to reach target memory capacities. The 2Rx4 dual rank configuration further enhances performance by enabling rank interleaving, which allows the memory controller to alternate access between ranks, improving effective throughput under load.

Advantages for Cloud Environments

Virtualized environments place significant demands on memory capacity and performance. The HMCGM4MHBRB265N category allows higher virtual machine density per host, enabling organizations to consolidate workloads without sacrificing performance. This capability is especially beneficial for private cloud infrastructures, hybrid cloud deployments, and enterprise virtualization platforms where efficient resource utilization is critical.

In-Memory Databases and Large Datasets

In-memory databases and analytics engines benefit greatly from large RAM capacities, as they can store entire datasets in memory for rapid access. The 96GB capacity of this category reduces reliance on slower storage tiers, enabling faster query execution and real-time data processing. This makes the HMCGM4MHBRB265N category suitable for data-intensive industries such as finance, healthcare, telecommunications, and e-commerce.

ECC Enterprise Data Integrity

Error-correcting code functionality is a defining feature of enterprise memory. The Hynix HMCGM4MHBRB265N category includes full ECC support, allowing it to detect and correct single-bit memory errors and detect multi-bit errors before they impact system operation. ECC protection is essential for preventing silent data corruption, which can compromise application accuracy and system stability in long-running server environments.

Reliability in Continuous Operation Scenarios

Enterprise servers often operate continuously under high load, increasing the likelihood of transient memory errors caused by electrical noise, temperature variations, or environmental factors. ECC functionality mitigates these risks, preserving data integrity and ensuring consistent system behavior. This reliability is critical for applications where downtime or corrupted data can have severe operational or financial consequences.

Registered Signal Buffering and Error Mitigation

The registered DIMM design buffers command and address signals, reducing electrical stress on the memory controller and improving timing accuracy. This buffering complements ECC functionality by reducing the likelihood of signal-related errors. The HMCGM4MHBRB265N category combines these features to deliver a robust and reliable memory solution.

DDR5 Voltage Innovations

DDR5 memory introduces significant improvements in power efficiency compared to previous generations. The HMCGM4MHBRB265N category operates at optimized voltage levels, delivering higher performance while consuming less power. Improved power efficiency reduces operational costs and helps data centers meet energy efficiency and sustainability goals.

On-Module Architecture

DDR5 RDIMM modules integrate on-module power management components that provide precise voltage regulation and reduce electrical noise. The HMCGM4MHBRB265N category benefits from this architecture by maintaining stable operation at high frequencies and improving overall system reliability. This integration also simplifies motherboard design and enhances compatibility across platforms.

Thermal Stability Under Sustained Workloads

High-capacity, high-speed memory modules generate heat during prolonged operation. The HMCGM4MHBRB265N category is engineered to operate within enterprise thermal specifications, ensuring consistent performance without throttling. This thermal stability supports deployment in high-density server racks and demanding data center environments.

Platform Industry Standards

Enterprise memory must be compatible with a wide range of server platforms to ensure predictable deployment. The Hynix HMCGM4MHBRB265N category adheres to industry standards and is validated for use with modern server processors and chipsets that support DDR5 ECC RDIMM memory. This standards-based design simplifies integration and reduces deployment risk.

Multi-Socket and Scale-Up Architectures

Many enterprise servers utilize dual-socket or multi-socket architectures to scale processing power. The HMCGM4MHBRB265N category supports these configurations by enabling balanced memory population and efficient data access across processors. This ensures scalable performance for compute-intensive enterprise workloads.

Stability and Enterprise Supply Assurance

Enterprise deployments often require consistent hardware configurations over extended lifecycles. The HMCGM4MHBRB265N category benefits from controlled manufacturing processes and long-term availability commitments, allowing organizations to maintain uniform server environments.

Hynix Manufacturing Expertise and Quality Assurance

Hynix is a globally recognized leader in DRAM manufacturing, supplying memory solutions for enterprise, cloud, and high-performance computing markets. The HMCGM4MHBRB265N category reflects this expertise through meticulous design, rigorous testing, and comprehensive validation. Each module is produced under strict quality control standards to ensure reliability, performance consistency, and long operational lifespan.

Enterprise-Grade Validation and Stress Testing

Memory modules in this category undergo extensive validation, including thermal cycling, voltage margin analysis, and prolonged workload testing. These processes ensure that the HMCGM4MHBRB265N category delivers consistent performance throughout its service life.

Memory Foundation for Data-Centric Growth

The combination of extreme bandwidth, high-density capacity, ECC protection, registered architecture, power efficiency, and thermal stability makes the Hynix HMCGM4MHBRB265N category a future-ready memory foundation. It supports enterprise growth as organizations adopt advanced analytics, artificial intelligence, and next-generation computing platforms.