Hynix HMT41GR7BFR8A-PB 8GB DDR3 1600mhz PC3-12800 CL11 ECC 240-Pin DIMM

Capacity: 8GB

The Hynix Memory HMT41GR7BFR8A-PB DDR3 SDRAM Registered 240-Pin DIMM boasts a capacity of 8GB, making it an ideal choice for users who require a reliable and efficient memory solution. With 8GB of memory, users can expect improved performance and enhanced multitasking capabilities.

Improved Performance

One of the key benefits of having a larger memory capacity is improved performance. With 8GB of memory, users can run multiple applications simultaneously without experiencing any lag or slowdowns. This is especially beneficial for users who work with resource-intensive applications such as video editing software, graphic design tools, or virtual machines.

Having sufficient memory allows these applications to run smoothly, ensuring that tasks are completed quickly and efficiently. Users can expect faster rendering times, smoother playback, and seamless multitasking.

Enhanced Multitasking

Another advantage of the 8GB capacity is the ability to handle multiple tasks simultaneously. With more memory available, users can have several applications open at once without sacrificing performance. This is particularly useful for professionals who need to switch between different software tools or work on multiple projects simultaneously.

Users can seamlessly switch between applications without experiencing any delays or slowdowns. This improved multitasking capability enables users to work more efficiently and complete tasks in a shorter amount of time.

Future-Proofing

Investing in a memory module with an 8GB capacity also provides future-proofing benefits. As technology continues to advance, applications and operating systems may require more memory to perform optimally. By choosing a memory module with a larger capacity, users can ensure that their system will be able to handle future software updates and advancements.

Upgrading to a higher capacity memory module can be costly and time-consuming. By opting for 8GB of memory upfront, users can save both time and money in the long run.

Speed: 1600MHz

The Hynix Memory HMT41GR7BFR8A-PB DDR3 SDRAM Registered 240-Pin DIMM is designed with a speed of 1600MHz, providing users with a fast and responsive computing experience. This speed is crucial for users who require high-performance memory for demanding tasks.

Fast Data Transfer

With a speed of 1600MHz, this memory module enables fast data transfer between the CPU and the memory. This results in quick access to stored data, allowing for faster application loading times and smoother overall system performance.

Users can expect reduced waiting times when launching applications or accessing large files. This is especially important for professionals who work with large datasets or require real-time data processing.

Improved System Responsiveness

A higher memory speed also translates to improved system responsiveness. With a faster memory module, users can experience snappier performance when navigating through menus, opening files, or switching between applications.

The increased responsiveness enhances the overall user experience, making the system feel more fluid and efficient. Users can work more efficiently and complete tasks in a shorter amount of time.

Optimized Gaming Experience

Gamers can also benefit greatly from the 1600MHz speed of this memory module. The faster data transfer allows for quicker loading times in games, reducing lag and ensuring a smooth gaming experience.

In fast-paced multiplayer games, every millisecond counts. The 1600MHz speed ensures that gamers have a competitive edge by minimizing latency and maintaining a high framerate.

Cas Latency: CL11

The Hynix Memory HMT41GR7BFR8A-PB DDR3 SDRAM Registered 240-Pin DIMM features a Cas Latency of CL11, which plays a crucial role in memory performance. Cas Latency refers to the delay between the moment a memory controller requests data and when it becomes available for use.

Improved Memory Access Speed

A lower Cas Latency, such as CL11, results in improved memory access speed. With lower latency, the memory module can respond to requests from the CPU more quickly, reducing the time it takes to access stored data.

This improved access speed enhances overall system performance, allowing for faster application loading times and smoother multitasking.

Enhanced Gaming Performance

Gamers can benefit greatly from a lower Cas Latency. In gaming, microseconds can make a significant difference in performance. A lower latency ensures that data is retrieved from memory more quickly, reducing input lag and improving overall responsiveness.

With a Cas Latency of CL11, gamers can experience smoother gameplay with reduced stuttering and improved frame rates.

Ecc: 1

The Hynix Memory HMT41GR7BFR8A-PB DDR3 SDRAM Registered 240-Pin DIMM is equipped with Error Correcting Code (ECC) technology, providing users with enhanced reliability and stability. ECC memory is designed to detect and correct errors that may occur during data storage or transmission.

Data Integrity

ECC technology ensures data integrity by detecting and correcting errors that occur at the bit level. This is particularly important for critical applications that require accurate and reliable data storage, such as financial systems, scientific research, or server environments.

By using ECC memory, users can have confidence in the accuracy and consistency of their data, minimizing the risk of data corruption or loss.

Improved System Stability

ECC memory also contributes to improved system stability. By detecting and correcting errors automatically, the memory module can prevent crashes or system instability caused by faulty data. This is especially beneficial for server environments or mission-critical systems where system downtime is not an option.

Users can rely on ECC memory to provide a stable and reliable computing experience, even under heavy workloads or demanding conditions.

Rx: 2

The Hynix Memory HMT41GR7BFR8A-PB DDR3 SDRAM Registered 240-Pin DIMM features a dual-rank configuration, denoted by Rx: 2. The rank refers to the organization of memory chips on the module and can impact memory performance and compatibility.

Improved Memory Performance

A dual-rank configuration can provide improved memory performance compared to a single-rank module. With two ranks, the memory module can access data in parallel, allowing for faster data transfer rates.

This enhanced performance is particularly beneficial for users who require high-speed memory for resource-intensive applications or multitasking.

Increased Compatibility

Dual-rank modules are generally more compatible with a wider range of systems compared to quad-rank modules. They are less likely to encounter compatibility issues with older motherboards or systems that are not designed to support higher-ranked modules.

Users can benefit from the increased compatibility of dual-rank modules, ensuring that the memory module is compatible with their existing system without any issues.

Voltage: 1.35V

The Hynix Memory HMT41GR7BFR8A-PB DDR3 SDRAM Registered 240-Pin DIMM operates at a voltage of 1.35V. This low voltage provides several benefits for users, including reduced power consumption, lower heat generation, and increased compatibility.

Reduced Power Consumption

Operating at a voltage of 1.35V allows this memory module to consume less power compared to modules that operate at higher voltages. Reduced power consumption leads to energy savings, making it an environmentally friendly choice.

Lower power consumption also means that the memory module generates less heat, contributing to overall system cooling and potentially extending the lifespan of other system components.

Improved System Cooling

With lower voltage comes lower heat generation. By operating at 1.35V, this memory module produces less heat during operation, helping to keep the system temperature in check.

Improved system cooling ensures that other components, such as the CPU or GPU, can operate within their optimal temperature range. This can result in improved performance and longevity of these components.

Increased Compatibility

A memory module operating at 1.35V is more likely to be compatible with a wider range of systems compared to modules that require higher voltages. Many newer systems are designed to support low-voltage memory modules, making them an ideal choice for users looking to upgrade their existing system.

Users can enjoy the benefits of low-voltage memory without worrying about compatibility issues or system instability.