M321R4GA3BB6-CQKET Samsung 32GB Memory Kits PC5-38400 DDR5 CL22 ECC RDIMM 2RX8

Samsung M321R4GA3BB6-CQKET 32GB Memory Kit

The Samsung M321R4GA3BB6-CQKET represents a significant leap forward in server memory technology, embodying the cutting-edge features of the DDR5 standard engineered specifically for enterprise-grade stability and performance. This 32GB module is not a standard desktop memory component; it is a precision-built, ECC Registered RDIMM designed to operate reliably in demanding server environments, from data analytics and virtualization to cloud computing and high-performance computing (HPC) clusters. Its specification—4800MT/s speed, CL40 latency, 2Rx8 configuration, and 1.2V operation—defines a new era of efficiency and throughput for modern server platforms. This category page delves into the intricate technical details and profound benefits of this advanced memory module, explaining why it is a cornerstone for building resilient and powerful server infrastructure.

Core Specifications

At its heart, the M321R4GA3BB6-CQKET is built to the stringent JEDEC standard for DDR5 server memory, ensuring broad compatibility and reliable operation. Let's dissect its core architecture and what each component of its naming convention means for system performance.

Decoding the Model: M321R4GA3BB6-CQKET

Samsung's model number is a detailed blueprint of the module's capabilities. 'M3' denotes a DDR5 module, while '21' indicates its 32GB density. The 'R' confirms its Registered (RDIMM) type, crucial for signal integrity in multi-channel setups. '4G' refers to the 4Gb memory die density used in its construction. 'A3' points to its component revision and organization. The 'BB6' segment identifies the specific PCB design and rank configuration. Finally, the suffix '-CQKET' is a speed/bin designation, unequivocally defining its 4800MT/s speed at CL40-40-40 timing at the standard 1.2V. This alphanumeric string guarantees a precise set of performance characteristics.

Performance Benchmarks: 4800MT/s and CAS Latency 40

The Need for Speed: 4800 Megatransfers per Second

Operating at a data rate of 4800 million transfers per second (4800MT/s), officially classified as PC5-4800, this module delivers a substantial bandwidth increase over previous-generation DDR4 modules. This elevated speed directly translates to faster data movement between the CPU and memory, reducing bottlenecks in memory-intensive applications. The resulting peak theoretical bandwidth per module is significantly higher, enabling servers to process larger datasets more rapidly, support more virtual machines, and accelerate in-memory database operations.

Understanding CAS Latency and Timing (CL40)

While speed measures how much data can move, latency measures how quickly the memory responds to initial requests. A CAS Latency (CL) of 40 cycles at 4800MT/s represents an optimized balance between raw speed and responsive access. In the context of DDR5's architectural improvements, such as the split 32-bit sub-channel architecture, the effective latency for real-world server workloads is highly efficient. This balanced timing ensures that high-speed data transfer is matched with reliable access times, maintaining smooth operation across diverse enterprise applications.

Advanced DDR5 Features for Server Reliability

DDR5 is not merely about faster speeds; it introduces foundational architectural changes that enhance reliability, serviceability, and power management—attributes paramount in 24/7 server operations.

On-Die ECC (Error Correction Code)

A pivotal innovation in DDR5 is the inclusion of On-Die ECC. This feature operates within each memory die to detect and correct bit errors *before* data is sent to the system-level ECC. This internal scrubbing dramatically reduces the raw bit error rate (RBER) seen by the server's memory controller, providing an additional layer of data integrity at the most fundamental level. It complements the module-level ECC for unparalleled data protection.

Power Management Integrated Circuit (PMIC)

Shifting from motherboard-controlled power to a module-integrated PMIC is a game-changer for server power integrity. The PMIC on this Samsung module localizes voltage regulation, providing cleaner, more stable power (1.2V VDD) to the DRAM chips. This reduces signal noise, improves stability during power state transitions, and enhances the module's ability to tolerate voltage fluctuations. It also enables more granular power monitoring and management, contributing to overall server energy efficiency.

Server-Specific Design: ECC and Registered Technology

This module is explicitly engineered for the server room, incorporating non-negotiable features for mission-critical stability.

ECC (Error Correcting Code) for Data Integrity

The module features a dedicated x8 ECC chip, providing single-bit error correction and multi-bit error detection on every 64-bit word transmitted. In a server environment where data corruption is unacceptable, ECC works silently in the background to ensure that soft errors caused by cosmic rays, electrical interference, or other factors do not lead to system crashes, corrupted calculations, or silent data corruption. This is a fundamental requirement for financial, scientific, and database servers.

Registered (Buffered) Design for Signal Stability

As a Registered RDIMM, this module includes a register (or buffer) on the module itself. This register sits between the server's memory controller and the DRAM chips, buffering the command and address signals. This reduces the electrical load on the controller, enabling the system to support a higher number of memory modules per channel (commonly 2DPC - 2 DIMMs Per Channel) without degrading signal integrity. This allows for higher total memory capacities in a system, which is essential for memory-hungry enterprise applications.

Physical and Operational Characteristics

The physical build of the module is tailored for compatibility and long-term operation in server chassis.

288-Pin RDIMM Form Factor

The module utilizes a 288-pin edge connector layout, which is physically and electrically incompatible with DDR4's 288-pin design due to a different key notch position. It is designed to fit into standard server-grade RDIMM slots. The printed circuit board (PCB) is built to server-grade thickness and layer count, ensuring robust physical durability and optimal signal pathways for high-frequency operation.

Power Efficiency

Operating at a nominal 1.2V, down from DDR4's typical 1.2V for comparable modules (with many DDR4 modules at 1.35V), this DDR5 module achieves higher performance with improved power efficiency. The lower voltage directly reduces the power consumption of the memory subsystem, contributing to lower total cost of ownership (TCO) through reduced energy bills and heat output, which in turn lowers cooling requirements in the data center.

2Rx8 Dual Rank Organization

The "2Rx8" designation means the module is organized as Dual Rank with an x8 DRAM device width. A dual-rank module effectively interleaves access between two internal "ranks" of memory, improving performance by allowing the memory controller to hide access latency by switching between ranks. The x8 device width is a standard and optimal configuration for ECC-enabled server memory, providing the ideal balance of capacity, performance, and manufacturability.

Target Applications and Use Cases

The Samsung M321R4GA3BB6-CQKET is not a general-purpose component; it is deployed in scenarios where reliability, capacity, and throughput are critical.

Enterprise Servers and Data Centers

This module is a prime candidate for mainstream dual-socket and single-socket enterprise servers from major OEMs like Dell, HPE, Lenovo, and Supermicro, supporting the latest Intel Xeon Scalable (Sapphire Rapids, Emerald Rapids) and AMD EPYC (Genoa, Bergamo) platforms. It is used to populate servers for general business applications, file serving, email hosting, and mid-tier databases.

Virtualization and Cloud Infrastructure

In hypervisor environments like VMware vSphere, Microsoft Hyper-V, or KVM, high memory capacity and reliability are key. These modules allow IT administrators to pack more virtual machines (VMs) onto a single physical host with confidence, thanks to ECC protection. Their performance also ensures that VMs experience minimal latency from the underlying hardware.

High-Performance Computing and Analytics

For technical computing, financial modeling, genomic sequencing, and AI/ML data preprocessing, workloads are often memory-bandwidth or capacity-bound. The high 4800MT/s bandwidth of these modules helps accelerate simulations and analytics by keeping CPU cores fed with data more efficiently, reducing computation time.

In-Memory Databases

Platforms such as SAP HANA, Oracle Database In-Memory, and various real-time analytics engines rely on massive, fast, and utterly reliable RAM. The combination of high density (32GB per module), ECC protection, and DDR5 bandwidth makes this Samsung module a critical building block for such systems, where nanoseconds of latency and data integrity directly impact business outcomes.

Wide Compatibility

Deploying this memory requires careful attention to platform compatibility and configuration guidelines.

Supported Platforms

This module is designed for servers using Intel Xeon Scalable Processors (code-named Sapphire Rapids and newer) and AMD EPYC 9004 Series (Genoa) and 8004 Series (Siena) processors and their respective platforms. It is crucial to verify compatibility with the specific server motherboard or OEM system (Dell PowerEdge, HPE ProLiant, etc.) via their qualified vendor lists (QVL) to ensure certified operation at advertised speeds.