P65001-001 HPE 800GB Nvme Gen4 MU SFF U.3 SSD

HPE P65001-001 800GB NVMe Mixed Use SSD 

The HPE P65001-001 represents the pinnacle of enterprise storage technology, engineered specifically for modern data center demands. This 800GB NVMe Gen4 Mixed Use SSD delivers exceptional performance for read-intensive and mixed workload environments while maintaining enterprise-grade reliability. Built to the U.3 form factor standard, this drive offers unparalleled flexibility for multi-vendor server environments, ensuring seamless integration across your infrastructure.

Performance Specifications 

Designed for organizations requiring consistent, high-performance storage, the P65001-001 leverages the latest NVMe 1.4 protocol and PCIe 4.0 interface to deliver breakthrough speeds that significantly outperform previous generation solutions. The drive's advanced architecture ensures low latency and high IOPS for the most demanding enterprise applications.

Interface and Protocol Performance

The PCIe 4.0 x4 interface doubles the bandwidth compared to PCIe 3.0, enabling unprecedented data transfer rates. Combined with the efficiency of the NVMe 1.4 protocol, this drive minimizes protocol overhead and maximizes parallel processing capabilities through deep queue depths and multiple command queues.

Sequential Performance Metrics

With exceptional sequential read speeds reaching up to 6,800 MB/s and sequential write speeds up to 3,800 MB/s, the P65001-001 handles large file transfers and streaming data applications with remarkable efficiency. These performance characteristics make it ideal for big data analytics, video processing, and scientific computing workloads.

Random Performance Characteristics

The drive delivers outstanding random performance with up to 1,000,000 IOPS for read operations and up to 250,000 IOPS for write operations. This exceptional random performance ensures responsive operation in virtualized environments, database applications, and transaction processing systems where multiple simultaneous access patterns are common.

Endurance and Write Performance

As a Mixed Use SSD, the P65001-001 is optimized for environments with balanced read/write ratios. The drive features a substantial endurance rating of 5.84 PBW (Petabytes Written), equivalent to 1.0 Drive Writes Per Day over its 5-year warranty period, ensuring long-term reliability in write-intensive scenarios.

Form Factor and Physical Specifications

The 2.5-inch Small Form Factor (SFF) design with U.3 interface compatibility provides maximum deployment flexibility. This physical specification makes the drive suitable for both traditional and hyper-converged infrastructure deployments where space optimization is critical.

U.3 Interface Advantages

The U.3 interface represents a significant advancement in enterprise storage connectivity, combining SAS, SATA, and NVMe protocols into a single connector. This universal compatibility eliminates the need for different backplanes for various drive types, simplifying infrastructure planning and reducing total cost of ownership.

Physical Dimensions 

Measuring 70mm x 100mm x 15mm and weighing approximately 120 grams, the P65001-001 conforms to standard 2.5-inch drive specifications. This compact design enables high-density storage configurations while maintaining optimal thermal characteristics for consistent performance.

Power Consumption Profile

With typical active power consumption of 10-14 watts and idle power as low as 4 watts, the drive offers excellent performance per watt. Advanced power management features include multiple power states that automatically optimize energy usage based on workload demands, contributing to reduced operational costs in large-scale deployments.

Reliability and Data Integrity Features

Enterprise workloads demand uncompromising data protection, and the P65001-001 delivers comprehensive reliability features. With a MTBF (Mean Time Between Failures) rating of 2,000,000 hours and built-in end-to-end data protection, this drive ensures data integrity throughout the entire data path.

Advanced Error Correction and Protection

The drive incorporates multiple layers of error correction, including LDPC (Low-Density Parity Check) ECC technology that corrects both random and burst errors. Additional protection mechanisms include RAID-like functionality within the drive architecture and advanced bad block management algorithms.

Data Retention Specifications

Under typical operating conditions, the P65001-001 guarantees data retention for 3 months at 40°C after power loss, ensuring data integrity during maintenance or unexpected power events. This specification exceeds JEDEC standards for enterprise SSDs and provides additional peace of mind for critical data storage.

Use Cases and Application Scenarios

The P65001-001 excels in multiple enterprise scenarios where performance, reliability, and flexibility are paramount. Its balanced characteristics make it suitable for diverse workload types across various industry verticals.

Virtualization and Cloud Infrastructure

In virtualized environments, the drive delivers consistent low latency for VDI (Virtual Desktop Infrastructure), server virtualization, and containerized applications. The high IOPS capability supports dense VM deployments while maintaining quality of service across all virtual machines.

Database and Transaction Processing

For OLTP (Online Transaction Processing) systems and database applications, the P65001-001 provides the low latency and high random IOPS required for responsive transaction processing. The mixed-use optimization ensures balanced performance for both read-intensive queries and write-heavy transaction commits.

High-Performance Computing and Analytics

In HPC environments, the drive's high sequential throughput accelerates data ingestion and processing for scientific computing, financial modeling, and big data analytics. The capacity point of 800GB provides optimal balance between performance and storage density for computational workloads.

NAND Technology 

Utilizing high-endurance 3D TLC NAND flash memory, the drive achieves an optimal balance between cost, performance, and reliability. The advanced memory architecture includes multiple parallel NAND channels and die-level interleaving to maximize throughput and minimize latency.