Samsung M426R2GA3BB0-CQKOD 16GB 4800MHz PC5-38400 CL46 DDR5 ECC Memory
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Samsung 16GB DDR5-4800 Memory Modules
Discover rapid, energy‑efficient laptop memory with the Samsung M426R2GA3BB0-CQKOD. This 16GB DDR5 SODIMM delivers next‑gen bandwidth, lower power draw, and dependable stability, ideal for productivity, gaming, and professional workloads.
Manufacturer and part details
- Brand: Samsung
- Official part number: M426R2GA3BB0-CQKOD
- Product name: 16GB DDR5 SDRAM Memory Module
Technical specifications
- Total capacity: 16GB
- Memory type: DDR5 SDRAM
- Module count: 1 × 16GB (single module)
- Data rate: 4800 Mbps (DDR5‑4800)
- Bandwidth class: PC5‑38400
- Error checking: On‑die ECC for enhanced reliability
- CAS latency: CL46
- Rank configuration: 1Rx8
Physical characteristics
- Form factor: 262‑pin SODIMM
- Shipping dimensions: 1.00″ (height) × 6.75″ (depth)
- Shipping weight: 0.20 lb
Performance and reliability advantages
Speed and efficiency
- High throughput: DDR5‑4800 enables faster multitasking, smoother apps, and reduced load times.
- Optimized power use: Lower operating voltage helps keep systems cooler and more efficient.
Stability and integrity
- On‑die ECC: Improves data integrity by correcting internal bit errors in real time.
- Consistent latency: CL46 timings balance speed with predictable performance.
Compatibility guidance
Laptop readiness
- Socket support: Designed for notebooks using 262‑pin DDR5 SODIMM slots.
- Platform check: Verify your motherboard or laptop supports DDR5 memory standards before upgrading.
Use cases
- Productivity: Accelerates office suites, browsers with many tabs, and collaboration tools.
- Content creation: Improves editing, rendering, and large asset workflows.
- Gaming: Enhances frame consistency and reduces stutter with faster assets loading.
M426R2GA3BB0-CQKOD PC5-38400 1Rx8 Memory overview
Samsung DDR5 memory represents a significant evolution in system memory technology, designed to meet the increasing demands of modern computing environments such as enterprise servers, professional workstations, advanced desktop platforms, and data-intensive applications. The Samsung M426R2GA3BB0-CQKOD 16GB PC5-38400 DDR5-4800Mbps 1Rx8 Memory module belongs to a category of next-generation DRAM solutions that prioritize higher bandwidth, improved power efficiency, enhanced stability, and architectural scalability. This category is engineered for platforms that require consistent performance under sustained workloads, including virtualization, database management, content creation, engineering simulations, and emerging artificial intelligence workloads. DDR5 memory introduces architectural improvements over DDR4, enabling systems to handle larger data sets while maintaining lower power consumption per bit transferred.
Transition from DDR4 to DDR5 Memory Architecture
The shift from DDR4 to DDR5 represents a fundamental redesign rather than an incremental update. DDR5 memory modules such as the Samsung M426R2GA3BB0-CQKOD feature increased data rates, starting at 4800Mbps and scaling far beyond previous standards. This category supports higher densities per module, allowing system builders to achieve greater total memory capacity without increasing physical slot usage. The DDR5 architecture integrates on-die error correction capabilities, which enhance data reliability and reduce system-level error handling overhead. By moving power management responsibilities from the motherboard to the memory module itself, DDR5 enables more precise voltage regulation and improved signal integrity, contributing to system stability under heavy loads.
PC5-38400 Bandwidth Classification and Its Impact
The PC5-38400 designation reflects the theoretical peak bandwidth offered by this category of memory modules. Operating at 4800Mbps, these modules provide a substantial increase in data throughput compared to DDR4 alternatives. This higher bandwidth is especially beneficial for multi-core processors that require rapid access to memory resources. In high-performance computing environments, increased bandwidth reduces latency bottlenecks and improves overall system responsiveness. The Samsung M426R2GA3BB0-CQKOD is designed to maintain consistent throughput across sustained workloads, making it suitable for enterprise-grade applications and professional computing tasks.
16GB Capacity Configuration and Scalability Considerations
The 16GB capacity of this memory module positions it as a versatile solution within the DDR5 category. It serves as a foundational building block for scalable memory configurations, allowing users to populate multiple slots to reach higher aggregate capacities. This capacity is well-suited for modern operating systems and applications that demand substantial memory resources, including virtualization platforms, development environments, and creative software suites. The category emphasizes modular scalability, enabling system integrators to customize memory configurations based on workload requirements without compromising performance consistency.
Single Rank 1Rx8 Memory Design Characteristics
The 1Rx8 configuration indicates a single-rank memory module utilizing x8 DRAM chips. This design balances performance, compatibility, and efficiency across a wide range of platforms. Single-rank modules often offer improved signal integrity and compatibility with diverse motherboard layouts, making them a preferred choice in enterprise and OEM deployments. Within this category, the 1Rx8 layout contributes to predictable latency characteristics and optimized memory controller interactions, which are critical for systems that operate continuously under demanding conditions.
Compatibility with DDR5 Memory Controllers
DDR5 memory controllers are designed to take advantage of the architectural enhancements offered by modules like the Samsung M426R2GA3BB0-CQKOD. This category is engineered to meet JEDEC specifications, ensuring broad compatibility with supported chipsets and processors. The standardized design allows seamless integration into systems built around next-generation CPUs from leading manufacturers. By adhering to strict validation processes, this category minimizes compatibility issues and ensures stable operation across supported platforms.
Power Efficiency and Thermal Management in DDR5 Modules
One of the defining characteristics of DDR5 memory is improved power efficiency. The Samsung M426R2GA3BB0-CQKOD operates at a lower nominal voltage compared to previous generations, reducing overall system power consumption. Integrated power management circuits on the module allow for finer voltage control, which enhances energy efficiency and reduces heat generation. This category is particularly advantageous in data centers and professional environments where power efficiency directly impacts operational costs and thermal design constraints.
On-Module Voltage Regulation and Stability
The inclusion of on-module voltage regulation distinguishes DDR5 memory from earlier standards. This design allows each module to manage its own power delivery, resulting in improved voltage stability and reduced electrical noise. For the Samsung M426R2GA3BB0-CQKOD category, this translates into consistent performance under variable workloads and improved reliability over extended operational periods. Enhanced stability is critical for mission-critical applications where system uptime and data integrity are paramount.
Benefits for Enterprise and Professional Workloads
Enterprise applications such as virtualization, database processing, and real-time analytics benefit from the enhanced reliability provided by DDR5 memory. The Samsung M426R2GA3BB0-CQKOD category is designed to support these workloads by delivering consistent performance and minimizing error-related interruptions. Improved data integrity contributes to smoother operation and reduced maintenance overhead, which are essential considerations in large-scale deployments.
Virtualization and Cloud Infrastructure Support
Virtualized environments place significant demands on system memory due to the need to allocate resources across multiple virtual machines. DDR5 memory modules in this category provide the bandwidth and capacity required to support high VM densities without performance degradation. The Samsung M426R2GA3BB0-CQKOD enables efficient memory allocation and fast context switching, which are critical for cloud service providers and enterprise IT environments.
Content Creation and Engineering Applications
Content creators and engineers rely on memory-intensive applications that process large data sets in real time. The high bandwidth and stable performance of this DDR5 category support smooth operation of professional software tools. Tasks such as high-resolution video editing, complex simulations, and large-scale modeling benefit from the improved memory throughput offered by the Samsung M426R2GA3BB0-CQKOD.
Future-Proofing System Builds with DDR5 Technology
As software and hardware continue to evolve, memory requirements are expected to increase. DDR5 memory provides a foundation for future system upgrades by offering higher capacity potential and scalable performance. The Samsung M426R2GA3BB0-CQKOD category enables system builders to prepare for upcoming workloads and technological advancements without requiring immediate hardware overhauls.
