M321R4GA0BB0-CQKD Samsung 32GB DDR5 SDRAM PC5-38400 ECC REG 4800MHz 288P RDIMM RAM

Core Key Specifications

At the heart of this module lies a comprehensive set of specifications designed for compatibility and performance within the latest server platforms.

DDR5's Revolutionary 32-Bank Structure

A key architectural advancement within DDR5 is the subdivision of memory banks. While DDR4 featured 16 banks, DDR5 doubles this to 32. Furthermore, these banks are grouped into 8 bank groups. This finer granularity allows the memory controller to access different banks with much lower latency between operations. By keeping more banks "open" and ready for activation, the module can handle a more complex and parallelized queue of memory access requests, leading to significantly improved efficiency, especially under random access patterns common in server workloads.

ECC and Registered Design for Maximum Integrity

The integration of Error-Correcting Code (ECC) is non-negotiable for enterprise environments. The Samsung M321R4GA0BB0-CQKD features on-die ECC, a pioneering aspect of DDR5 technology. This means each DRAM chip can detect and correct bit errors internally before data is sent to the memory buffer. This proactive error correction happens at the earliest possible stage, significantly enhancing data integrity and reducing the latent error rate. Combined with the reliability of the registered buffer, this module delivers the fault tolerance required for 24/7/365 operation, safeguarding against data corruption and potential system crashes.

Memory Capacity and Form Factor

This module provides a substantial 32 gigabytes (GB) of data storage capacity. This capacity is ideal for balancing high-density memory configurations with cost-effectiveness, allowing system architects to populate servers with ample total memory to handle vast datasets and numerous concurrent applications. The module utilizes the standard 288-pin RDIMM form factor, ensuring broad compatibility with server motherboards designed for DDR5 memory. The Registered (RDIMM) design incorporates a register (or buffer) on the module to reduce the electrical load on the server's memory controller. This crucial feature enables the support of a much larger number of memory modules per channel, which is essential for achieving high total memory capacities in multi-socket server systems without compromising signal integrity or system stability.

4800MT/s Data Rate

Operating at a data rate of 4800 megatransfers per second (MT/s), formally designated as PC5-38400, this module offers a significant bandwidth uplift over previous-generation DDR4 standards, accelerating data movement between the CPU and memory.

288-Pin RDIMM

The module utilizes a 288-pin Dual In-line Memory Module (DIMM) form factor, physically distinct from DDR4's 288-pin design due to a different key notch position to prevent accidental insertion into incompatible motherboards. The Registered (RDIMM) design incorporates a register to buffer address and command signals, enabling greater stability and support for more modules per channel in multi-socket server systems.

Advanced Memory Architecture

Samsung's DDR5 technology introduces fundamental architectural changes that go beyond simple speed increases, enhancing overall system efficiency and capability.

ECC and Registered Features

The module features on-die ECC, a new DDR5 capability where error correction occurs within the DRAM chip itself, addressing cell-level faults before they affect the wider memory array. This works in tandem with the standard side-band ECC (often referred to as ECC on the data bus) provided by the Registered ECC architecture to correct single-bit errors and detect multi-bit errors, ensuring unparalleled data integrity for critical server applications.

Power Management Integrated Circuit (PMIC)

DDR5 introduces a paradigm shift in power delivery by moving the Power Management Integrated Circuit (PMIC) from the motherboard directly onto the memory module itself. The M321R4GA0BB0-CQKD incorporates an on-module PMIC. This innovation provides several critical advantages: it allows for more granular and stable voltage regulation tailored specifically to the module's components, reduces power supply noise, and improves signal integrity. The on-module PMIC also enhances power efficiency by optimizing voltage levels, which is a cornerstone of DDR5's improved performance-per-watt metric.

Power Efficiency

Operating at a reduced voltage of 1.1V compared to DDR4's typical 1.2V, this Samsung DDR5 module achieves notable power savings at the component level. When multiplied across hundreds or thousands of modules in a data center, this reduction translates into substantial decreases in operational power consumption and heat generation. The on-module PMIC is instrumental in maintaining this lower voltage with high precision.

Registered Clock Driver (RCD)

The onboard Register Clock Driver (RCD) is a critical component for server-grade memory. This allows server motherboards to populate more memory modules per channel (commonly 2 DPC - DIMMs Per Channel) without signal degradation, which is essential for achieving high total memory capacities in systems with multiple CPUs.

DDR5-Specific Enhancements

A key innovation in DDR5 is the integration of a Power Management IC (PMIC) directly on the memory module. This shifts voltage regulation from the motherboard to the DIMM itself, enabling more precise power delivery, improved signal integrity, and enhanced power efficiency. The PMIC allows for better granularity in power states and reduces voltage noise, which is crucial for stable operation at high speeds.

Burst Length and Bank Architecture

DDR5 doubles the burst length from BL8 (in DDR4) to BL16, allowing for more efficient data transfer per column access command. Furthermore, it employs a bank architecture split into two independent 32-bit sub-channels (though still accessed as a single 64-bit channel by the CPU), which increases bank parallelism and reduces latency for concurrent accesses, improving overall efficiency.

Application Use Cases

The combination of high bandwidth, large capacity, and robust reliability makes this module suited for a wide spectrum of enterprise computing tasks.

Data Center and Enterprise Server Deployment

In virtualized environments running VMware ESXi, Microsoft Hyper-V, or KVM, high memory capacity and reliability are paramount. The 32GB RDIMM density allows for efficient consolidation of numerous virtual machines (VMs) on a single host, while ECC protection safeguards against silent data corruption that could affect multiple tenant VMs in cloud scenarios.

In-Memory Databases and Analytics

Platforms like SAP HANA, Oracle Database In-Memory, and Microsoft SQL Server with In-Memory OLTP demand vast, fast, and error-resistant memory. The module's 4800MHz bandwidth accelerates data access for real-time analytics, and the ECC functionality ensures the accuracy of computations and transactions held in volatile memory.

High-Performance Computing (HPC)

HPC clusters used for computational fluid dynamics, genomic sequencing, and financial modeling require consistent, high-throughput data feeding to CPUs. The increased bandwidth of DDR5, as exemplified by this Samsung module, helps reduce bottlenecks in memory-bound applications, shortening time-to-solution for complex simulations.