M321R4GA3EB0-CWM Samsung 32GB PC5-44800 SDRAM Cl46 288P RDIMM ECC REG DDR5 RAM

Comprehensive Product Overview

Samsung M321R4GA3EB0-CWM 32GB PC5-44800 2Rx8 288-pin RDIMM ECC Registered DDR5-5600MHz memory modules are built for high-reliability systems where stability, data integrity, and consistent throughput matter. This category focuses on enterprise-grade RDIMMs that combine Samsung's memory engineering with ECC (Error-Correcting Code) and register technology to support multi-CPU servers, dense memory configurations, virtualization platforms, in-memory databases, and mission-critical workloads.

Samsung M321R4GA3EB0-CWM 32GB DDR5 Memory Kit

The Samsung M321R4GA3EB0-CWM represents a critical advancement in server memory technology, offering robust performance, enhanced reliability, and superior data integrity for modern data centers, enterprise servers, and high-performance computing (HPC) environments. This 32GB DDR5 module is engineered to meet the escalating demands of workloads requiring high bandwidth, massive data throughput, and unwavering stability.

Core Product Specifications

At its heart, the M321R4GA3EB0-CWM is a precision-engineered component designed for seamless integration into compatible server platforms. Its specifications define its capabilities and ideal use cases.

Capacity

This module provides a substantial 32 gigabytes (GB) of memory capacity in a single 288-pin RDIMM form factor. The configuration is listed as 1x32GB, indicating a single module kit. The internal architecture is 2Rx8, meaning it is a dual-rank module with eight internal banks per rank. This design optimizes memory access efficiency and allows the memory controller to interleave requests between ranks, improving overall bandwidth utilization compared to single-rank modules in many server workloads.

Part Number Breakdown: M321R4GA3EB0-CWM

Samsung's part number encodes key attributes. The "M3" signifies DDR5. "21" denotes the product family and technology. "R4" indicates it is a Registered (RDIMM) module. "GA" references the component and revision. "3EB0" often pertains to speed, timing, and voltage specifics. The suffix "CWM" is a crucial bin code, representing the guaranteed performance profile of this specific module: a speed of 5600 Mbps at CAS Latency 46 with a 1.1V operating voltage.

Performance Parameters

The performance of this DDR5 module is characterized by its speed, latency, and voltage, which collectively determine its data transfer rates and power efficiency.

Speed and Data Rate: 5600 Mbps / PC5-44800

The module operates at a data rate of 5600 megatransfers per second (MT/s), often referred to as 5600 Mbps. In DDR (Double Data Rate) memory, this translates to a clock speed of 2800 MHz. The industry-standard designation for this performance level is PC5-44800. The "PC5" identifies it as DDR5, and the "44800" refers to the theoretical peak bandwidth in megabytes per second (MB/s) for a single module. Calculating this involves multiplying the data rate (5600 MT/s) by the data width (64 bits/8 bits per byte = 8 bytes), resulting in 44,800 MB/s of bandwidth.

Timing and Latency: CL46

A critical performance metric is Column Address Strobe Latency, or CAS Latency (CL), specified here as CL46. This figure, measured in clock cycles, represents the delay between the memory controller requesting data and the moment the data is available on the module's output pins. While a lower CL number generally indicates faster response time (lower latency), it must be evaluated in the context of the clock speed. DDR5's higher base speeds often result in higher cycle counts (like CL46) but can still achieve lower absolute latency in nanoseconds compared to previous generations when calculated. The combination of 5600 MT/s and CL46 offers a balanced profile optimized for server throughput and stability.

Power Efficiency

The Samsung M321R4GA3EB0-CWM runs at a nominal voltage of 1.1 volts. This represents a significant reduction from the 1.2V standard of DDR4, contributing directly to lower power consumption and reduced thermal output at the module and system level. This efficiency is paramount in dense server deployments where power and cooling costs are major operational considerations.

Advanced DDR5 Technology Features

Beyond the base specifications, this module incorporates the architectural improvements inherent to the DDR5 standard, which deliver substantial gains over DDR4.

On-Die ECC (Error-Correcting Code)

A foundational feature of DDR5 memory is the inclusion of On-Die ECC. This is a secondary, internal error-correction mechanism that operates within the DRAM chip itself. It corrects bit errors that occur *inside* the memory chip before data is sent to the memory buffer. This layer of protection increases data reliability and chip-level longevity, addressing soft error rates that can increase with finer semiconductor manufacturing processes. It is important to distinguish this from the module-level ECC provided by the Registered ECC design.

Two Independent 32-bit Subchannels

Unlike DDR4's single 64-bit data channel per module, each DDR5 module features two independent 32-bit subchannels. This effectively doubles the number of banks and bank groups accessible concurrently. For the memory controller, this means more granularity in command operations, reducing bottlenecks and improving overall efficiency in handling multiple, simultaneous data requests, which is typical in multi-core server processors.

Server-Specific Reliability Features

The "M321R4GA3EB0-CWM" is explicitly built for the demanding operational environment of servers, integrating features that prioritize data integrity and system stability over raw consumer-oriented speed.

ECC (Error-Correcting Code) Functionality

This is a true ECC memory module. It includes extra DRAM chips on the PCB to store error-correcting code bits. The module can detect and correct single-bit errors on-the-fly and detect (but not correct) multi-bit errors. This is a fundamental requirement for enterprise servers, financial systems, scientific computing, and databases where data corruption is unacceptable. It prevents soft memory errors from causing system crashes or data corruption.

Registered ECC (RDIMM)

The module is a Registered DIMM (RDIMM). It incorporates a register, or buffer, on the module itself (the Registering Clock Driver - RCD) that sits between the memory controller and the DRAM chips. This buffer handles all address, command, and clock signals, reducing the electrical load on the memory controller. This allows servers to support much higher memory capacities (more DIMMs per channel) and higher densities without timing degradation, which is essential for multi-socket servers and systems requiring terabytes of RAM. It provides superior signal integrity and system stability at the cost of a minimal, one-clock-cycle latency penalty, which is irrelevant for most server applications.

PMIC (Power Management Integrated Circuit)

DDR5 moves the voltage regulation from the motherboard to the memory module itself, via an onboard PMIC. This gives the M321R4GA3EB0-CWM greater control over its power delivery, enabling cleaner power signals, improved voltage scaling, and enhanced signal integrity. This leads to better stability, especially during power state transitions, and contributes to the overall energy efficiency of the server.

Compatibility and Use Cases

Understanding where and how this module is deployed is key to recognizing its value proposition.

Target Systems and Platforms

The Samsung M321R4GA3EB0-CWM is designed for servers and workstations that require registered ECC DDR5 memory. It is compatible with server platforms from major OEMs like Dell (PowerEdge), HPE (Proliant), Lenovo (ThinkSystem), and Cisco (UCS), as well as with motherboard platforms from Supermicro, Asus, and others that utilize Intel Xeon Scalable Processors (e.g., Sapphire Rapids, Emerald Rapids) or AMD EPYC processors supporting DDR5 memory. It is critical to verify compatibility via the system or motherboard manufacturer's Qualified Vendor List (QVL) before installation.

Ideal Workloads and Applications

The combination of high bandwidth (5600MT/s), large capacity (32GB per module), and robust ECC protection makes this module suitable for a wide array of enterprise and technical computing tasks.

Virtualization and Cloud Infrastructure

In virtualized environments running VMware, Hyper-V, or KVM, high memory capacity and reliability are non-negotiable. This module allows for dense consolidation of virtual machines (VMs) on a single host, ensuring data integrity across multiple tenant workloads.

In-Memory Databases and Analytics

Platforms like SAP HANA, Oracle Database In-Memory, and Microsoft SQL Server leverage large pools of RAM for extreme performance. The bandwidth of DDR5-5600 accelerates data access, while ECC guarantees the accuracy of calculations and transactions stored in memory.

High-Performance Computing (HPC)

Scientific simulations, financial modeling, and machine learning training often involve processing massive datasets. The high throughput of this memory module helps feed data to high-core-count CPUs efficiently, reducing bottlenecks in computational pipelines.

Physical and Operational Details

The physical construction and operational characteristics ensure reliable long-term performance.

Form Factor: 288-Pin RDImm

The module uses the standard 288-pin interface for DDR5. The key notch is in a different position than DDR4, preventing accidental insertion into an incorrect slot. The "RDIMM" designation confirms its registered/buffered design, which is physically distinguishable by the presence of the register chip (RCD) typically located in the center of the PCB.

Density and Chip Organization

The 32GB density is achieved using high-density DDR5 SDRAM chips from Samsung's advanced semiconductor fabrication lines. The 2Rx8 configuration indicates the use of multiple ranks of 8-bit-wide chips to assemble the full 64-bit data width (plus extra bits for ECC). This organization is a common and reliable configuration for server memory of this capacity.