M324R4GA3DB0-CWMOD Samsung 32GB PC5-44800 DDR5 5600MBPS Ram
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Highlights of Samsung M324R4GA3DB0-CWMOD 32GB DDR5 Ram
The Samsung M324R4GA3DB0-CWMOD 32GB DDR5 5600MBPS PC5-44800 UDIMM delivers high-speed performance for desktops requiring advanced DDR5 architecture. This non-ECC unbuffered memory module enhances multitasking, boosts application responsiveness, and improves overall system productivity.
General Information
- Manufacturer: Samsung
- Part Number: M324R4GA3DB0-CWMOD
- Product Category: Desktop Memory Upgrade
- Sub Type: DDR5 5600MBPS (PC5-44800)
Technical Specifications
- Module Type: DDR5 UDIMM
- Capacity: 32GB
- Memory Standard: DDR5 SDRAM
- Module Count: 1 × 32GB
- Speed Rating: 5600MBPS / DDR5-5600 / PC5-44800
- Error Checking: Non-ECC
- Signal Type: Unbuffered (UDIMM)
- CAS Latency: CL40
- Rank Structure: 2Rx8
- Operating Voltage: 1.1V
Physical Attributes
Dimensions & Build
- Width: 8.89 cm (3.5 in)
- Depth: 19.81 cm (7.8 in)
- Height: 1.91 cm (0.75 in)
Package & Weight
- Shipping Weight: 0.20 lb
Compatibility
- Compatible with motherboards that support DDR5 UDIMM Non-ECC.
- Not suitable for servers requiring RDIMM or ECC memory.
Overview of Samsung M324R4GA3DB0-CWMOD 32GB Non-ECC
The Samsung M324R4GA3DB0-CWMOD 32GB DDR5 5600MBPS PC5-44800 Non-ECC 2Rx8 1.1V SDRAM 288-Pin UDIMM Memory Module represents one of the most advanced and high-performance desktop and workstation memory components available from Samsung’s industry-leading DDR5 lineup. This module is engineered to meet the demands of next-generation computing where higher clock speeds, improved bandwidth, superior power efficiency, and scalable performance are all essential for professionals, enthusiasts, and creators. With a 5600MBPS transfer rate, dual-rank 2Rx8 layout, 1.1V low-power design, and the reliability of Samsung’s latest semiconductor fabrication, this memory module ensures uncompromising stability for workloads and high-end system configurations.
Advanced DDR5 Architecture
The shift from DDR4 to DDR5 is one of the most significant leaps in memory technology in recent years, and the Samsung M324R4GA3DB0-CWMOD module stands at the forefront of this transition. DDR5 introduces substantial improvements in bandwidth, efficiency, and internal structure, enabling the memory module to deliver faster performance while maintaining optimal thermal and electrical stability. At 5600MBPS, this PC5-44800 UDIMM offers remarkable data throughput that dramatically enhances system responsiveness during complex tasks such as large dataset operations, AI-assisted workflows, high-resolution video editing, advanced gaming physics calculations, and massive multitasking environments.
The Importance of 5600MBPS Memory Speed in Modern Computing
As applications grow more resource-intensive, memory speed becomes a critical factor for performance. The Samsung M324R4GA3DB0-CWMOD module’s 5600MBPS rating provides a significant jump over previous DDR4 memory offerings, granting users faster refresh cycles, improved I/O performance, and enhanced responsiveness in systems that leverage cutting-edge CPU platforms. For gaming enthusiasts, ultra-fast DDR5 memory helps reduce texture-loading delays, improves frame pacing uniformity, and significantly enhances real-time processing performance. Media professionals benefit from high bandwidth during multi-stream 4K and 8K playback, demanding compositing workflows, and high-bitrate timeline scrubbing.
Internal Enhancements Made Possible by DDR5
DDR5 introduces several significant architectural changes compared to DDR4, and the Samsung M324R4GA3DB0-CWMOD takes advantage of these enhancements to provide stable, high-throughput data transfer. Among these improvements is the integration of on-die ECC, which, while not the same as server-grade ECC, helps correct minor internal bit errors and enhances data integrity within the memory die. DDR5 also doubles the number of memory banks and bank groups, allowing better concurrency for multi-threaded applications. Burst lengths have been extended for improved throughput, and independently functioning 32-bit subchannels optimize data pipelines for parallel workloads. These advancements work together to ensure that users experience smooth and highly reliable performance during demanding computing tasks.
Enhanced Burst Length for Data Processing
One critical improvement with DDR5 technology is an increased burst length, enabling larger blocks of data to be processed more efficiently. The Samsung M324R4GA3DB0-CWMOD model benefits greatly from this architectural shift, delivering higher-level performance in data-intensive workloads such as photorealistic rendering, neural network computation, scientific simulation, and content production pipelines. A longer burst length allows the memory to serve the CPU more data in less time, boosting real-world performance even in scenarios where high-speed random access is required.
1.1V Operating Voltage
Modern computing systems require memory modules that balance speed with power efficiency, especially as increasingly compact workstations and gaming rigs integrate powerful CPUs, GPUs, and storage devices. The Samsung M324R4GA3DB0-CWMOD reduces energy consumption thanks to its 1.1V DDR5 operating standard, which lowers power draw compared to DDR4 while enabling higher frequencies and improved thermal operation. This reduction is beneficial not just for power-conscious users but also for systems operating within limited thermal envelopes such as small-form-factor desktops or high-density workstation racks. Lower voltage operation also contributes to long-term hardware reliability and reduced heat output, which directly benefits overall system stability under heavy sustained load.
Integrated Circuit (PMIC) Advantages
One of the most significant innovations introduced with DDR5 is the integration of a Power Management Integrated Circuit (PMIC) on the memory module itself. The Samsung M324R4GA3DB0-CWMOD uses PMIC technology to enhance voltage regulation precision, reduce electrical noise, and ensure more stable power delivery to the memory chips. By shifting voltage regulation from the motherboard to the memory module, DDR5 reduces power management complexity and allows modules to maintain consistent operation even when the system is under heavy transient load. This greatly improves overall system efficiency, minimizes voltage fluctuations, and enhances compatibility with a wide variety of motherboard designs.
Thermal Benefits and Long-Term Stability
Heat is one of the leading factors affecting long-term memory performance and stability. With its efficient 1.1V design, DDR5 architecture, and PMIC-controlled regulation, the Samsung M324R4GA3DB0-CWMOD operates at lower temperatures even during intense workloads. This thermal efficiency allows the memory module to maintain consistent clock speeds without throttling, ensuring predictable performance in gaming, creative workloads, and computational applications. Additionally, cooler operation promotes hardware longevity, making this module ideal for users who demand long-term reliability from their systems.
Improved Stability for Overclocked Systems
While Non-ECC UDIMM modules are not typically associated with professional overclocking, the internal efficiency improvements in DDR5 allow the Samsung M324R4GA3DB0-CWMOD to maintain exceptional stability even when configured within high-performance systems. Enthusiasts who utilize advanced BIOS tuning or memory optimization tools benefit from more predictable behavior and smoother performance scaling, making this module ideal for workloads that require extra performance under tuned conditions. The robust internal architecture ensures consistent operation even when running at sustained high frequencies.
Dual Rank 2Rx8 Design for Multi-Channel
The Samsung M324R4GA3DB0-CWMOD 32GB module uses a 2Rx8 configuration, which offers several performance advantages for multitasking, high throughput workflows, and systems requiring enhanced memory addressing capabilities. Dual-rank memory modules allow CPUs to interleave workloads more effectively, improving performance in applications that rely on rapid access to large amounts of data. Compared to single-rank modules, dual-rank memory typically provides smoother performance in modern desktop applications, especially when paired with multi-core processors that issue numerous simultaneous memory requests. This makes the Samsung M324R4GA3DB0-CWMOD a strong choice for advanced users who need consistent bandwidth and enhanced multi-threading performance.
Benefits of 2Rx8 Structure in Modern CPU Architectures
Today’s CPUs are built with increasingly sophisticated memory controllers capable of leveraging high-speed dual-rank memory for more efficient data access patterns. The 2Rx8 design used by this Samsung module improves the ability of processors to maintain higher memory throughput, especially during concurrent workloads such as gaming while streaming, rendering while encoding, or multitasking with intense parallel applications. As the number of processor cores continues to increase in consumer systems, dual-rank memory ensures consistent feed rates for optimal CPU performance. This is particularly important for creators, researchers, and professionals who rely on fast memory responsiveness throughout long computational tasks.
Reduced Bottlenecks Applications
Many demanding applications experience performance bottlenecks due to memory throughput limitations. With its dual-rank design and high-speed DDR5 architecture, the Samsung M324R4GA3DB0-CWMOD minimizes these constraints, allowing software to run more smoothly even under intense workloads. Applications involving heavy processing of visual effects, AI model development, large data analysis, or high frame-rate gaming can access memory more quickly and efficiently, reducing latency spikes and eliminating bottlenecks that can compromise performance consistency.
Enhanced High-Density Memory Configurations
Systems equipped with multiple memory slots often benefit significantly from dual-rank modules. The Samsung M324R4GA3DB0-CWMOD works exceptionally well in multi-module configurations where high total system memory is required. Whether a workstation is configured with 64GB, 128GB, or even larger capacities using multiple DDR5 UDIMMs, the dual-rank structure helps ensure balanced performance and consistent data flow, making it suitable for users who need to equip their systems with large amounts of memory.
288-Pin UDIMM Format for Broad Platform
As a 288-pin UDIMM, the Samsung M324R4GA3DB0-CWMOD is compatible with a wide selection of modern desktop motherboards from leading manufacturers that support DDR5 memory. This includes platforms from Intel’s 12th, 13th, and 14th generation families, as well as AMD’s Ryzen 7000 series and newer architectures designed for high-speed DDR5. The UDIMM format is designed specifically for desktops and workstations and ensures easy installation without the need for specialized server configurations. Its Non-ECC design further broadens compatibility with consumer-level chipsets, making it ideal for general users, gamers, and professional creators who do not require ECC-specific features.
Platform Across Intel and AMD Ecosystems
The Samsung M324R4GA3DB0-CWMOD provides extensive compatibility across multiple generations of high-performance hardware. Intel’s latest desktop processors feature advanced IMC designs optimized for DDR5 bandwidth, allowing users to experience the full potential of the 5600MBPS speed rating. AMD’s Ryzen 7000 series and future AM5-based processors also benefit greatly from the enhanced throughput and architectural improvements offered by DDR5. Whether building a new system or upgrading an existing one, this module ensures seamless performance integration across diverse computing environments.
erformance with XMP and Memory Tuning Technologies
Modern motherboards provide advanced memory tuning features such as Intel XMP and AMD EXPO technologies, enabling users to unlock the full rated speed of their DDR5 modules. While specific XMP or EXPO profiles depend on the manufacturer’s implementation, the Samsung M324R4GA3DB0-CWMOD is engineered to achieve stable performance when configured at its full 5600MBPS frequency. Users who utilize memory tuning features can experience improved performance scalability, allowing the module to deliver exceptional responsiveness during demanding workloads.
Improved Signal Integrity Through 288-Pin Interface
The enhanced pin layout of DDR5 modules provides improved signal integrity, additional power routing features, and greater communication stability between the memory and the CPU. The Samsung M324R4GA3DB0-CWMOD leverages this interface design to ensure reliable performance at high clock speeds, maintaining stable operation even when the system is under heavy load. This is particularly essential for users who depend on consistent performance across extended usage periods.
Ideal Use Cases for DDR5 UDIMM Memory
With its exceptional 5600MBPS performance and 32GB capacity, the Samsung M324R4GA3DB0-CWMOD is ideal for users who require advanced memory capabilities for modern computing environments. This includes professionals working with 3D modeling, advanced content creation, high-resolution video editing, software development, and simulation tasks that demand massive bandwidth and low-latency operation. Gamers building high-end rigs benefit from smoother gameplay, improved load times, and enhanced performance in open-world titles, competitive esports environments, and VR experiences. Data analysts, researchers, and AI developers can also leverage the module’s high-speed design to accelerate computational tasks significantly.
Gaming and Real-Time Rendering Advantages
High-speed memory is essential for modern gaming systems that rely heavily on real-time processing and asset streaming. The Samsung M324R4GA3DB0-CWMOD ensures faster scene transitions, reduced micro-stutter, and improved minimum frame rates in demanding games that utilize large data buffers. Titles with advanced physics engines, massive open-world terrains, or AI-driven gameplay logic benefit significantly from the increased data throughput offered by DDR5 memory. Paired with modern Intel or AMD CPUs and powerful GPUs, this module creates a balanced, high-performance system designed for next-generation gaming standards.
Professional Workflow Enhancements
Creative professionals depend on memory performance for video editing, rendering, visual effects production, and digital art workflows. The Samsung M324R4GA3DB0-CWMOD offers sufficient capacity and bandwidth to handle large project files, multi-layer compositions, high-bitrate footage, and complex timelines in applications such as Adobe Premiere Pro, DaVinci Resolve, Blender, Autodesk Maya, and Cinema 4D. Faster memory reduces preview lag, accelerates rendering tasks, enhances multitasking productivity, and ensures a smoother overall workflow for creators working on time-sensitive projects.
Scientific, Engineering, and Development Applications
Tasks such as computational modeling, engineering simulation, AI development, and software compilation require high memory bandwidth and stable performance. The Samsung M324R4GA3DB0-CWMOD provides a reliable platform for these workloads, enabling faster computation cycles, optimized data handling, and consistent performance even under heavy multi-threaded load. Research institutions, developers, and engineers benefit from its ability to handle complex workloads that require efficient access to large datasets.
Samsung Semiconductor Quality and Reliability
Samsung is one of the world’s leading producers of memory products, known for its high-quality fabrication, rigorous testing standards, and unmatched reliability across its DDR5 lineup. The M324R4GA3DB0-CWMOD model is engineered with premium semiconductor materials, ensuring optimal stability across a wide temperature and voltage range. Samsung’s strict quality control procedures ensure that each module meets global standards for durability, long-term reliability, and consistent electrical performance. This makes the module an excellent investment for users who require dependable performance for professional and enthusiast applications.
High-End Manufacturing for Long-Term Durability
With state-of-the-art manufacturing facilities and advanced chip design methodologies, Samsung ensures that its DDR5 modules maintain high reliability during intense workloads and long operational periods. The M324R4GA3DB0-CWMOD uses robust PCB layers, advanced heat dissipation materials, and optimized signal routing to maintain stable performance. This attention to engineering detail ensures that the module provides years of reliable operation even under heavy computational demands.
Rigorous Testing and Validation Standards
Samsung subjects each module to extensive validation procedures, including stress testing, temperature testing, voltage fluctuation analysis, and compatibility verification. These testing procedures ensure that the M324R4GA3DB0-CWMOD module delivers stable and predictable performance in a wide range of system configurations. The strict validation process also guarantees compatibility with top-tier motherboards, ensuring seamless integration for users upgrading or building new systems.
Consistent Performance Across Diverse Computing Environments
Whether deployed in professional studios, home workstations, corporate desktops, or high-performance gaming rigs, the Samsung M324R4GA3DB0-CWMOD consistently delivers the same high-quality performance. Its robust design ensures that users experience stable operation even when performing demanding tasks that push system resources to their limits. This reliability makes it a top choice for users seeking high-performance DDR5 Non-ECC UDIMM memory.
