MTA18ASF2G72PDZ-3G2E1 16GB DDR4 3200Mhz PC4-25600 CL22 ECC RDIMM

Capacity

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM is equipped with a capacity of 16GB, making it an excellent choice for users who require high-performance memory modules for their systems. With this substantial capacity, users can expect improved multitasking capabilities, faster data processing, and enhanced overall system performance.

Improved Multitasking

With a capacity of 16GB, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM allows users to run multiple applications simultaneously without experiencing any lag or slowdowns. This is particularly beneficial for professionals who rely on resource-intensive software, such as graphic designers, video editors, and engineers. The increased capacity ensures smooth operation even when juggling multiple tasks simultaneously.

Enhanced Data Processing

The 16GB capacity of this DDR4 SDRAM enables faster data processing, allowing users to handle large files and complex calculations more efficiently. Whether you're rendering high-resolution videos, analyzing big data sets, or running virtual machines, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM's ample capacity ensures that your system can handle demanding tasks effortlessly.

Improved System Performance

By increasing the capacity of your system's memory, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM significantly improves overall system performance. With 16GB of memory, your computer can store and access frequently used data more quickly, resulting in faster boot times, smoother application launches, and reduced loading times for large files. This enhanced performance leads to a more efficient and productive computing experience.

Speed

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM boasts an impressive speed of 3200Mhz, making it an excellent choice for users who demand top-notch performance from their memory modules. The high speed of this SDRAM module offers numerous benefits and is essential for tasks that require rapid data access and transfer.

Rapid Data Access

The 3200Mhz speed of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM ensures that data can be accessed quickly, resulting in faster application launches and seamless multitasking. This is particularly advantageous for users who work with resource-intensive applications, as the high-speed memory allows for efficient handling of complex tasks.

Fast Data Transfer

In addition to rapid data access, the high speed of this DDR4 SDRAM module enables fast data transfer rates. This is crucial when transferring large files or streaming high-definition media. With a speed of 3200Mhz, users can enjoy smooth and uninterrupted data transfer, ensuring a seamless experience when working with large datasets or transferring files between devices.

Optimized Gaming Performance

For gamers, the 3200Mhz speed of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM is a significant advantage. It allows for faster loading times, smoother gameplay, and reduced latency. Gamers can enjoy immersive gaming experiences without any performance bottlenecks caused by slower memory modules.

Form Factor

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM features a 288-pin RDIMM form factor, which offers several benefits and advantages for users. The form factor of a memory module determines its physical size and compatibility with different systems.

Compatibility with Various Systems

The 288-pin RDIMM form factor is widely compatible with a range of systems, including servers, workstations, and high-performance desktop computers. This makes the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM suitable for a wide variety of applications, ensuring that users can easily integrate it into their existing systems without compatibility issues.

Expandability and Future-Proofing

The 288-pin RDIMM form factor allows for easy expandability, making it simple to add additional memory modules to enhance system performance. With the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM, users can start with a single module and expand their memory capacity as needed. This ensures future-proofing and the ability to meet evolving memory requirements without replacing the entire memory subsystem.

Reliable and Secure Connection

The 288-pin RDIMM form factor provides a secure and reliable connection between the memory module and the system's memory slots. The increased number of pins ensures a stable electrical connection, reducing the risk of data corruption or system instability. Users can have confidence in the durability and reliability of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM, even under heavy workloads or demanding conditions.

Ecc

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM features ECC (Error-Correcting Code) technology with an ECC rating of 1. ECC is an essential feature for users who prioritize data integrity and system stability.

Data Integrity and Error Detection

ECC technology detects and corrects errors that may occur during data storage or transmission. By implementing error detection and correction algorithms, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM can identify and rectify single-bit errors, ensuring the accuracy and integrity of stored data. This is crucial in applications where data integrity is paramount, such as scientific computing, financial transactions, and critical server operations.

Prevention of System Instability

Bit errors in memory can cause system crashes, freezes, or unexpected behavior. The ECC functionality of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM helps prevent such issues by detecting and correcting errors in real-time. This ensures that the system remains stable and reliable, even when subjected to heavy workloads or prolonged operation.

Enhanced System Uptime

The ECC feature of this DDR4 SDRAM module contributes to enhanced system uptime and reduced downtime. By automatically correcting errors, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM minimizes the risk of data corruption or system crashes. This is particularly important for businesses and organizations that rely on continuous operation without interruptions or data loss.

Registered

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM is a registered memory module, which offers several benefits for users who require high-performance and reliable memory solutions.

Improved Signal Integrity

Registered memory modules, also known as buffered memory modules, provide improved signal integrity by reducing electrical load on the memory bus. The buffering of signals ensures that data transmission remains stable and accurate, even at high speeds or when using multiple memory modules. The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM's registered design ensures robust signal integrity, allowing for consistent performance under demanding conditions.

Support for Large Memory Configurations

Registered memory modules enable the use of larger memory configurations in systems that require substantial amounts of RAM. By reducing the electrical load on the memory bus, registered memory modules allow for greater scalability and compatibility with systems that support higher memory capacities. With the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM, users can take advantage of larger memory configurations to meet the demands of memory-intensive applications or virtualization environments.

Increase in System Stability

The registered design of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM contributes to increased system stability by reducing signal noise and crosstalk. This results in fewer errors and improved overall system performance. Users can rely on the stability and reliability of this memory module, even under heavy workloads or in mission-critical applications.

Rank

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM features a dual rank configuration, which offers several benefits for users who require high-performance memory modules.

Increased Memory Density

Dual rank memory modules provide increased memory density compared to single rank modules. With more memory cells packed into a single module, users can achieve higher memory capacities without occupying additional slots. The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM's dual rank configuration allows for efficient utilization of available memory slots, making it an ideal choice for systems with limited slot availability or those that require maximum memory capacity.

Enhanced Memory Performance

The dual rank configuration of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM enables improved memory performance by facilitating better memory interleaving. This allows for faster data access and transfer rates, resulting in enhanced system performance and responsiveness. Users can expect smoother multitasking and improved overall system efficiency with this dual rank memory module.

Optimized Compatibility

Dual rank memory modules, such as the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM, are widely compatible with a variety of systems. They can be used in single-channel, dual-channel, or quad-channel memory configurations, making them suitable for a broad range of applications. The optimized compatibility ensures that users can easily integrate this memory module into their existing systems without compatibility issues or limitations.

Data Width

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM features an X8 data width configuration, offering several benefits for users who require high-performance and efficient memory solutions.

Increased Memory Bandwidth

The X8 data width configuration allows for increased memory bandwidth compared to narrower data width configurations. With a wider data path, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM can transfer larger amounts of data per clock cycle, resulting in improved overall system performance. This increased memory bandwidth is particularly advantageous for memory-intensive tasks such as gaming, multimedia editing, and data analysis.

Efficient Data Processing

The X8 data width configuration enables efficient processing of data by maximizing the utilization of available memory channels. By utilizing a wider data path, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM can handle larger chunks of data simultaneously, reducing latency and improving overall system responsiveness. Users can experience faster data processing and seamless multitasking with this memory module.

Optimized System Performance

The X8 data width configuration ensures optimized system performance by enabling efficient communication between the memory module and the system's memory controller. This results in improved data transfer rates, reduced bottlenecks, and enhanced overall system efficiency. Users can rely on the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM to deliver exceptional performance and responsiveness in their computing tasks.

Voltage

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM operates at a voltage of 1.2v, offering several benefits for users who prioritize energy efficiency and low power consumption.

Energy Efficiency

Operating at a low voltage of 1.2v, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM consumes less power compared to memory modules that operate at higher voltages. This contributes to overall energy efficiency and helps reduce electricity consumption, making it an excellent choice for environmentally conscious users or organizations aiming to minimize their carbon footprint.

Reduced Heat Generation

The low voltage operation of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM results in reduced heat generation compared to memory modules that require higher voltages. This helps maintain optimal operating temperatures within the system and prevents excessive heat buildup, which can lead to performance degradation or system instability. Users can rely on this memory module to deliver consistent performance even under prolonged operation without concerns about overheating.

Compatibility with Low-Voltage Systems

The 1.2v operating voltage of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM ensures compatibility with low-voltage systems, such as laptops or small form factor computers. This makes it an ideal choice for users who require high-performance memory in energy-efficient computing environments. Users can enjoy the benefits of this memory module without compromising on power efficiency or compatibility with their systems.

Cas Latency

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM features a CAS latency (CL) of 22, which offers several benefits for users who demand high-performance memory modules.

Improved Memory Access Time

CAS latency refers to the amount of time it takes for the memory module to respond to a command and deliver requested data. With a CAS latency of 22, the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM offers improved memory access time, ensuring faster data retrieval and reduced latency. This results in enhanced system responsiveness and smoother multitasking, especially for memory-intensive applications.

Optimized System Performance

The low CAS latency of the Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM contributes to optimized system performance by minimizing delays in data access. By reducing the time it takes for the memory module to respond to commands, users can experience faster application launches, improved overall system efficiency, and seamless handling of resource-intensive tasks. Whether you're gaming, editing videos, or running virtual machines, this memory module's low CAS latency ensures optimal performance.

Compatibility with High-Speed Systems

The Micron MTA18ASF2G72PDZ-3G2E1 DDR4 SDRAM's CAS latency of 22 ensures compatibility with high-speed systems that require low-latency memory modules. This makes it an ideal choice for users who demand top-notch performance from their systems and rely on memory modules that can keep up with their computing needs. Users can trust this memory module to deliver exceptional performance and reliability in high-speed computing environments.