MTA18ASF2G72PZ-2G6J1 Micron 16GB Pc4-21300 DDR4 2666Mhz Ecc Registered Memory Module

The Micron MTA18ASF2G72PZ-2G6J1 16GB RAM PC4-21300

The Micron MTA18ASF2G72PZ-2G6J1 16GB RAM PC4-21300 DDR4 2666MHz CL19 SDRAM category includes high-performance, server-grade memory modules designed for enterprise servers, workstations, and data centers. This page dives deep into every aspect of this category, ensuring you understand the specifications, performance characteristics, compatibility, and benefits of this ECC Registered memory solution. Whether you are a system builder, IT professional, or enthusiast looking to optimize a server environment, this detailed breakdown helps you discover why this RAM module category is essential for demanding applications.

DDR4 Technology and Memory

DDR4 (Double Data Rate 4) is the fourth generation of synchronous dynamic random-access memory. This memory standard delivers significant improvements over previous generations (such as DDR3) including higher data transfer rates, lower operating voltage, and enhanced thermal performance. The Micron MTA18ASF2G72PZ-2G6J1 modules follow the DDR4 standard, meaning they provide improved reliability and efficiency in memory operations.

DDR4 memory, like this PC4-21300 module, delivers scalable performance that meets the needs of modern server workloads. The “PC4-21300” designation represents the module’s peak theoretical bandwidth of 21,300 MB/s, making it suitable for data-intensive environments.

Memory 16GB Capacity

The memory capacity of 16GB per module provides a robust balance of size and performance for applications requiring fast access to large datasets. A 16GB memory module is standard in server builds where multitasking, virtualization, and high-throughput computing are critical.

16GB Modules Matter

Choosing a 16GB module enables better memory scaling compared to smaller capacities such as 4GB or 8GB. This becomes particularly important when deploying memory in multi-channel configurations or when operating in systems that demand high concurrency, such as virtualization platforms, database servers, and memory-intensive computing environments.

2666MHz Frequency

The 2666MHz memory speed defines the data rate at which the RAM can read and write. Higher frequency corresponds to faster data processing, which results in improved system responsiveness and throughput. The Micron 2666MHz RAM modules are optimized to balance performance and stability for server workloads.

Comparing 2666MHz with Other Speeds

While some systems support higher speeds like 2933MHz or 3200MHz, the 2666MHz configuration remains widely supported across server platforms and is often the default profile for many enterprise motherboards. It ensures compatibility with a variety of CPUs and chipsets while delivering consistent and reliable performance.

CAS Latency CL19

CAS latency (Column Access Strobe latency) measures the delay between memory request and data availability. A CAS latency of CL19 means the memory module requires 19 clock cycles to access data after a request. While CL19 may appear higher compared to gaming-oriented RAM modules, it is optimized for server stability and ECC error correction processes, making it ideal for enterprise use.

288-Pin DIMM Architecture

This memory module adheres to the standard 288-pin DIMM architecture for DDR4 SDRAM. This form factor ensures physical compatibility with a wide range of server motherboards designed for ECC Registered memory. The 288-pin configuration also supports robust electrical signaling and improved power management.

ECC Registered Memory

Understanding ECC (Error-Correcting Code)

ECC stands for Error-Correcting Code, a critical memory technology used in enterprise environments. ECC memory automatically detects and corrects single-bit memory errors before they cause data corruption or system crashes. Servers and workstations handling mission-critical applications require ECC memory to maintain data integrity.

Registered (Buffered) Memory

Registered memory, also known as buffered memory, incorporates a register between the DRAM modules and the memory controller. This register helps stabilize electrical signals, especially when multiple memory modules are installed. The result is improved signal integrity and support for larger memory configurations.

DDR4 vs. DDR3

When comparing DDR4 to older DDR3 modules, the DDR4 offers several advantages. DDR4 operates at a lower voltage (1.2V) compared to DDR3 (1.5V or higher), resulting in reduced power consumption and heat generation. DDR4 memory also supports higher maximum capacities and faster data rates, which is crucial for scaling large systems.

Performance Improvements

DDR4 memory modules, such as the Micron MTA18ASF2G72PZ-2G6J1, provide higher bandwidth and improved throughput, supporting modern workloads more efficiently. This makes them suitable for virtualization, real-time analytics, and multi-threaded applications that demand fast, concurrent memory access.