Micron MTA18ASF2G72PZ-2G9E1 16GB Pc4-23400 2933Mhz Cl21 Ecc Registered Single Rank X4 DDR4 SDRAM 288-pin Rdimm Memory Module

Capacity

The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM is equipped with a capacity of 16GB, making it an excellent choice for users who require high-performance memory for their computing needs. This ample capacity allows for smooth multitasking, faster data processing, and the ability to run resource-intensive applications without any hiccups.

Enhanced Performance

A 16GB capacity ensures that your system has enough memory to handle demanding tasks effortlessly. Whether you are a gamer, a content creator, or a professional using resource-intensive software, this DDR4 SDRAM will provide the necessary performance boost to enhance your overall computing experience.

Seamless Multitasking

With 16GB of memory, you can seamlessly switch between multiple applications without experiencing any slowdowns. This feature is especially beneficial for professionals who rely on software suites that require significant memory resources, such as graphic designers using Adobe Creative Suite or video editors working with large media files.

Smooth Gaming Experience

Gamers can also benefit greatly from the 16GB capacity of this DDR4 SDRAM. Modern games often require a substantial amount of memory to run smoothly, and having 16GB ensures that your system can handle the demands of the latest titles. This means faster load times, reduced stuttering, and an overall more immersive gaming experience.

Future-Proofing

Investing in a DDR4 SDRAM with a capacity of 16GB ensures that your system is future-proofed. As software and applications continue to evolve and become more resource-intensive, having ample memory will enable your computer to keep up with the demands of the latest technologies without requiring immediate upgrades.

Speed

The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM operates at a speed of 2933Mhz, providing users with blazing-fast performance and the ability to handle data-intensive tasks with ease.

Enhanced Data Processing

With a speed of 2933Mhz, this DDR4 SDRAM ensures that data is processed quickly and efficiently. This is particularly important for tasks that involve large datasets or complex calculations, such as scientific simulations, financial modeling, or video rendering. The high speed of this memory module significantly reduces processing time, allowing users to complete their tasks more efficiently.

Improved System Responsiveness

A higher speed results in improved system responsiveness, reducing the time it takes for applications to load and respond to user input. Whether you are launching software, opening files, or browsing the web, the speed of this DDR4 SDRAM ensures a smooth and seamless user experience.

Optimized Gaming Performance

Gamers can also benefit from the high speed of this DDR4 SDRAM. Faster memory speeds result in reduced latency, allowing for quicker access to game assets and smoother gameplay. This means faster frame rates, reduced input lag, and an overall more enjoyable gaming experience.

Compatibility with High-Speed Processors

The 2933Mhz speed of this DDR4 SDRAM makes it an ideal choice for systems equipped with high-speed processors. When paired with a compatible processor, the memory module can fully leverage the processor's capabilities, resulting in improved overall system performance.

Cas Latency

The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM features a Cas Latency (CL) of 21, which plays a crucial role in determining the memory module's speed and performance.

Optimized Memory Access

A Cas Latency of 21 ensures that the memory module can access stored data quickly and efficiently. Lower Cas Latency values indicate faster memory access times, resulting in improved system performance. The CL21 rating of this DDR4 SDRAM ensures that data retrieval processes are smooth and seamless, reducing overall latency and enhancing the user experience.

Enhanced System Stability

A lower Cas Latency value, such as CL21, contributes to improved system stability. By minimizing the time it takes for the memory module to access data, potential bottlenecks are reduced, resulting in a more stable and reliable computing environment. This is particularly important for users who rely on their systems for critical tasks or workloads that require consistent performance.

Compatibility with High-Performance Systems

The CL21 rating of this DDR4 SDRAM makes it compatible with high-performance systems that require fast memory access times. Whether you have a gaming rig, a workstation, or a server, this memory module will ensure that your system can handle demanding tasks without any compromise in performance.

Overclocking Potential

The Cas Latency value also plays a significant role in the overclocking potential of a memory module. A lower Cas Latency value allows for more headroom when manually overclocking the memory. This means that users who are interested in pushing their systems to the limit can benefit from the CL21 rating of this DDR4 SDRAM by achieving higher overclocking frequencies while maintaining stability.

Ecc

The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM features ECC (Error-Correcting Code) Registered technology, providing users with an additional layer of reliability and data integrity.

Data Integrity

ECC technology ensures that data stored in memory is protected against errors and corruption. This is achieved by adding extra bits to each memory cell, allowing the memory module to detect and correct single-bit errors. By implementing ECC Registered technology, this DDR4 SDRAM provides users with a higher level of data integrity, reducing the risk of data loss or corruption.

Reliability for Critical Workloads

The ECC Registered technology of this memory module makes it an excellent choice for systems that handle critical workloads or store sensitive data. Servers, workstations, and professional-grade systems often rely on ECC memory to ensure that data integrity is maintained at all times. By investing in this DDR4 SDRAM, users can have peace of mind knowing that their system is equipped with reliable memory that can withstand potential errors.

Stability for 24/7 Operation

Servers and other systems that operate continuously can benefit greatly from the ECC Registered technology. These systems are more susceptible to memory errors due to prolonged usage, making ECC memory essential for stable operation. The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM's ECC functionality ensures that these systems can run reliably without experiencing memory-related issues.

Reduced Downtime and Maintenance Costs

By utilizing ECC Registered memory, users can minimize system downtime caused by memory errors. The ability to detect and correct errors in real-time reduces the need for manual intervention or troubleshooting, saving both time and money on maintenance costs. This feature is particularly beneficial for businesses and organizations that rely on continuous system operation.

Rank

The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM features a Single Rank design, which offers several advantages in terms of compatibility and performance.

Optimized Compatibility

A Single Rank memory module is more compatible with a wider range of systems compared to Dual Rank or Quad Rank modules. This makes the Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM an ideal choice for users who are unsure about the compatibility of their system or plan to upgrade their system in the future. The Single Rank design ensures that this memory module can be easily integrated into various systems without any compatibility issues.

Improved Memory Performance

The Single Rank design allows for improved memory performance due to reduced electrical loading on the memory controller. This results in better signal integrity and faster data transfer rates. Users can benefit from increased memory bandwidth and improved overall system performance when using the Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM.

Scalability for Future Upgrades

Choosing a Single Rank memory module provides users with scalability options for future upgrades. As technology advances and memory requirements increase, users can easily add additional Single Rank modules to their system without worrying about compatibility issues or performance degradation. This flexibility allows for future-proofing and ensures that users can keep up with the demands of evolving technologies.

Cost-Effective Solution

The Single Rank design of this DDR4 SDRAM offers a cost-effective solution for users who require reliable memory performance without breaking the bank. With its compatibility, performance, and scalability benefits, the Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM provides excellent value for money and is a practical choice for users with budget constraints.

Voltage

The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM operates at a voltage of 1.2v, providing users with energy efficiency and compatibility with a wide range of systems.

Energy Efficiency

A lower operating voltage, such as 1.2v, translates to reduced power consumption. This not only benefits the environment by conserving energy but also helps users save on electricity bills. The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM's low voltage design ensures efficient power usage without compromising on performance.

Cooler Operation

The lower voltage of this DDR4 SDRAM contributes to cooler operation, as less power is converted into heat. This is particularly important for systems that require optimal thermal management, such as high-performance gaming rigs or servers. By operating at a lower voltage, this memory module helps maintain system temperatures within acceptable limits, reducing the risk of overheating and ensuring long-term stability.

Compatibility with Various Systems

The 1.2v voltage of this DDR4 SDRAM makes it compatible with a wide range of systems, including laptops, desktops, and servers. Many modern systems are designed to operate with low-voltage memory modules, and the Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM ensures seamless integration without any compatibility issues.

Overclocking Potential

The low operating voltage of this memory module also opens up opportunities for overclocking enthusiasts. When combined with other components designed for low-voltage operation, such as processors and graphics cards, users can achieve higher overclocking frequencies while maintaining stable and efficient performance. The 1.2v voltage of the Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM provides a solid foundation for users looking to push their systems to the limits.

Form Factor

The Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM features a 288-pin Rdimm form factor, offering users a reliable and widely compatible memory solution.

Easy Installation

The 288-pin Rdimm form factor ensures straightforward installation of this memory module into compatible systems. Users can simply align the pins with the corresponding slots on their motherboard and apply gentle pressure to secure the module in place. This ease of installation allows for hassle-free upgrades or replacements, saving time and effort.

Compatibility with Various Systems

The 288-pin Rdimm form factor is widely supported by a variety of systems, including desktops, workstations, and servers. This makes the Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM a versatile memory solution that can be used across different platforms without any compatibility concerns. Whether you have a consumer-grade system or an enterprise-level server, this memory module will seamlessly integrate into your setup.

Sturdy and Reliable Design

The 288-pin Rdimm form factor features a robust construction that ensures the durability and stability of the memory module. This design helps protect against accidental damage or dislodgement during system handling or transportation. Users can have confidence in the reliability of the Micron MTA18ASF2G72PZ-2G9E1 DDR4 SDRAM, knowing that it is built to withstand the rigors of everyday use.

Scalability for System Upgrades

The 288-pin Rdimm form factor allows for easy scalability when it comes to system upgrades. Users can add additional memory modules to their system, taking advantage of available slots, to increase overall memory capacity. This flexibility ensures that users can adapt their systems to evolving needs and future requirements without any compatibility issues.