MTC10C1084S1BC64BD1 Micron 16GB DDR5 6400MT/s PC5-51200 288-Pin CUDIMM Memory Kit

Micron MTC10C1084S1BC64BD1 DDR5 Server Memory Kit

The Micron MTC10C1084S1BC64BD1 represents a significant advancement in server and high-performance computing memory technology. As a 16GB DDR5 module operating at 6400MT/s, it is engineered to deliver enhanced bandwidth, improved power efficiency, and robust reliability for data-critical environments. This module belongs to the cutting-edge category of DDR5 memory, specifically designed for servers, workstations, and storage systems that demand unwavering data integrity and sustained performance under heavy loads.

Core Specifications and Performance Profile

At the heart of this module is its adherence to the DDR5 standard, which introduces a paradigm shift from previous generations. The key specifications define its capabilities and ideal use cases.

Capacity and Data Rate

The module boasts a 16GB (Gigabyte) capacity, providing a substantial amount of memory for handling large datasets, virtual machines, and in-memory databases. Its data rate of 6400 Megatransfers per second (MT/s) translates to a peak data bandwidth that significantly outpaces DDR4 modules. This speed is often denoted by the industry-standard designation PC5-51200, where "51200" refers to the module's bandwidth in megabytes per second (MB/s).

Understanding PC5-51200

The "PC5" prefix indicates a DDR5 module. The number "51200" is calculated by taking the data rate (6400 MT/s), multiplying by the module's data width (64 bits), and dividing by 8 bits per byte. This yields a theoretical peak bandwidth of 51,200 MB/s for a single module, enabling faster CPU-to-memory communication and reducing bottlenecks in bandwidth-intensive applications.

ECC and CUDIMM Form Factor

A critical feature of this module is ECC (Error-Correcting Code). ECC memory includes additional bits to detect and correct single-bit memory errors on-the-fly, safeguarding against data corruption, silent data errors, and system crashes. This is non-negotiable for enterprise servers, financial computing, and scientific research where data accuracy is paramount.

The module uses a 288-pin CUDIMM (Control Unit DIMM) connector. DDR5 architecture distributes the power management integrated circuit (PMIC) from the motherboard to the memory module itself, improving signal integrity and power delivery. The "CU" in CUDIMM can also be associated with the inclusion of a register/control buffer, making this module suitable for platforms that require registered/buffered memory for greater electrical load management in multi-DIMM configurations.

Technical Deep Dive: DDR5 Architecture Advantages

The Micron MTC10C1084S1BC64BD1 leverages several foundational DDR5 innovations that provide tangible benefits over DDR4.

Improved Channel Architecture

DDR5 effectively doubles the burst length and prefetch compared to DDR4. Furthermore, each DDR5 DIMM is organized as two independent 32-bit addressable sub-channels. This design increases memory access parallelism and efficiency, allowing the memory controller to handle more simultaneous operations, thereby reducing latency for real-world workloads and improving overall system responsiveness.

Power Management Integrated Circuit (PMIC)

The onboard PMIC is a hallmark of DDR5 technology. By regulating voltage (VDD) on the module itself, it provides more stable and cleaner power, which is crucial for achieving high data rates like 6400MT/s reliably. This localized power management also reduces noise and improves signal integrity, contributing to system stability and overclocking headroom.

DRAM Chip Organization and Rank Structure

Internally, the module is constructed using Micron's high-density DDR5 chips. The specific part number "MTC10C1084S1BC64BD1" indicates a single-rank (1Rx) configuration. A single-rank module presents all its memory chips to the memory controller in a single access group, which simplifies signal loading and can enable higher operating frequencies. This 1R design is crucial for achieving the 6400MT/s speed while maintaining signal integrity, especially in multi-DIMM per channel configurations common in servers.

CAS Latency

The designation "PC5-51200" is the module's bandwidth classification. It is calculated as (6400 MT/s * 64-bit bus / 8 bits per byte), resulting in approximately 51,200 MB/s (or 51.2 GB/s) of peak theoretical bandwidth per module. The CAS Latency (CL) is specified as CL52. In DDR5, due to the higher base speeds, CAS latency numbers are larger compared to DDR4, but this does not indicate lower performance. The true measure is absolute latency in nanoseconds. For this module at 6400MT/s, the approximate first-word latency is (CL52 / (0.5 * 6400) * 1000) ≈ 16.25 nanoseconds, representing a significant performance leap over previous generations when combined with the massive gains in bandwidth.

Error-Correcting Code (ECC) for Mission-Critical Stability

The "ECC" in this module's description is a paramount feature for professional and enterprise use. It signifies that the module includes additional memory bits to detect and correct the most common types of data corruption (single-bit errors) and detect multi-bit errors. This hardware-level error correction occurs transparently, preventing silent data corruption, system crashes, and application faults that can result from cosmic rays, electrical interference, or cell leakage. For servers running 24/7, ECC is not a luxury but a necessity for data integrity and system uptime.

On-Die ECC and Reliability Features

Beyond the standard ECC that corrects data in transit, DDR5 DRAM chips often incorporate on-die ECC. This internal error correction handles bit errors within the DRAM chip itself before data is sent to the memory bus, further enhancing data integrity and chip longevity. This multi-layered approach to reliability makes modules like the Micron MTC10C1084S1BC64BD1 exceptionally robust.

Detailed Product Parameters and Compatibility

Selecting the correct memory requires a thorough understanding of all technical parameters to ensure compatibility and optimal performance.

Timings and Latency

The module operates at CAS Latency (CL) 52. While this number is higher than typical DDR4 CL values, it is a reflection of the vastly increased clock speed and architectural changes of DDR5. True latency in nanoseconds is a function of both CAS latency and clock cycle time. At 6400MT/s, the cycle time is significantly shorter, often resulting in comparable or better absolute latency than DDR4 modules. The full timing specification (e.g., CL52-52-52) indicates a balanced latency profile optimized for server stability.

Power Efficiency

DDR5 operates at a lower standard voltage (typically 1.1V VDD) compared to DDR4's 1.2V. This reduction, combined with the efficiency of the onboard PMIC, leads to meaningful power savings at scale in data centers. The Micron module is designed to deliver high performance within this efficient power envelope through reduced energy consumption and cooling requirements.

Density and Chip Configuration

The 16GB density is achieved using state-of-the-art DRAM chips. The specific part number "MTC10C1084S1BC64BD1" follows Micron's naming convention, indicating the manufacturer (Micron), technology (DDR5), density, organization, and feature set. This module likely utilizes high-density components to achieve its capacity on a single rank, which can simplify memory population rules on server motherboards.

Application and Use Case Scenarios

The specific combination of features in the Micron MTC10C1084S1BC64BD1 makes it ideal for a range of demanding professional and enterprise applications.

Enterprise Servers and Virtualization

In rackmount and blade servers, this memory supports virtualization hypervisors (VMware, Hyper-V, KVM) by allowing a high density of virtual machines to run concurrently. The ECC protection ensures the stability of the host and all guest VMs, while the high bandwidth accelerates data movement between virtualized resources.

Database and In-Memory Analytics

For SQL/NoSQL databases (Oracle, SQL Server, MongoDB) and in-memory analytics platforms (SAP HANA, Redis), speed and reliability are critical. The module's 6400MT/s data rate reduces query times, and ECC safeguards the integrity of the in-memory data stores, preventing costly errors in financial transactions or business intelligence computations.

High-Performance Computing

In HPC clusters used for scientific simulation and rendering memory bandwidth can be a limiting factor. Deploying these DDR5 modules helps feed data to high-core-count CPUs (like Intel Xeon Scalable or AMD EPYC processors) more efficiently, reducing computation time and accelerating time-to-results for complex models.

Networking and Storage Appliances

Modern network function virtualization (NFV) appliances and all-flash storage arrays (SAN/NAS) require high-throughput, reliable memory for caching, metadata management, and protocol processing. The ECC CUDIMM design of this Micron module provides the necessary resilience and performance for these always-on infrastructure components.