P25706-001 HPE 16GB 2RX4 DDR4-3200 CAS-22-22-22 PC4-25600 RDIMM Smart Dual-rank Memory
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Overview of the HPE P25706-001 16GB DDR4-3200 RAM
The HPE P25706-001 16GB DDR4-3200 PC4-25600 Registered DIMM is engineered for performance, stability, and energy efficiency. Designed specifically for enterprise-class servers, this dual-rank Smart Memory module helps improve workload handling, reduce latency, and deliver consistent system responsiveness in demanding environments.
General Information
- Part Number: P25706-001
- Brand: HPE
- Capacity: 16GB per module
- Technology: DDR4 SDRAM
- Form Factor: Registered DIMM (RDIMM)
- Speed: 3200 MT/s (PC4-25600)
- Latency: CL22
- Voltage: 1.20V for optimized energy consumption
- Pin Count: 288-pin
- Memory Rank: Dual-rank configuration
- Compatible Systems: HPE servers requiring DDR4 Smart Memory
Technical Specifications
- Memory Size: 16GB per module
- Number of Modules: 1 x 16GB
- Memory Technology: DDR4 SDRAM
- Memory Standard: DDR4-3200 / PC4-25600
- Memory Speed: 3200 MHz
- Signal Processing: Registered
- CAS Latency: CL22
- Voltage: 1.20 V
- Memory Rank: Dual-rank
- Form Factor: 288-pin RDIMM
DDR4-3200 Smart Memory Matters
- Support high-performance computing workloads
- Enable scalable data center solutions
- Maintain reliability with registered buffering
- Operate at low voltage for energy-efficient deployments
The HPE 16GB DDR4-3200 CAS-22 PC4-25600 RDIMM Memory
The P25706-001 HPE 16GB 2Rx4 DDR4-3200 RDIMM is an enterprise-grade dual-rank Registered DIMM designed for modern HPE servers requiring dependable memory bandwidth, predictable latency, and long lifecycle stability. Built to the PC4-25600 specification and tuned to run at an effective transfer rate of 3200 MT/s with CAS timings of 22-22-22, this module aligns reliability features such as on-DIMM ECC and register/buffer logic with HPE Smart Memory qualification, helping data center operators meet capacity and performance targets while maintaining platform consistency and serviceability.
As a 2Rx4 RDIMM, the module balances density and signal integrity for mainstream virtualization hosts, database nodes, file/print servers, and edge compute appliances. It integrates seamlessly with HPE ProLiant, Apollo, and select HPE tower and rack servers that support DDR4-3200 registered memory, enabling straightforward scaling from entry configurations to fully populated multi-channel layouts.
DDR4-3200 RDIMM with 2Rx4 Architecture
Registered DIMMs place a register between the memory controller and the DRAM chips to reduce electrical load on the memory channel. This is especially valuable in multi-socket servers or systems with high slot counts, where signal integrity and timing margins are critical for reliability. The P25706-001 follows a 2Rx4 configuration—two ranks of x4-width DRAM devices—offering an effective balance of capacity and error resilience. With x4 DRAM organizations, the ECC scheme can provide improved fault isolation compared to x8 organizations under certain platform implementations, which is why x4 devices are common in enterprise RDIMMs.
At 3200 MT/s, the module aligns with PC4-25600 bandwidth targets, meaning a theoretical peak of 25.6 GB/s per channel under ideal conditions. Actual throughput depends on the CPU memory controller, number of active channels, rank interleaving, and workload characteristics. The CAS-22-22-22 latency profile is typical for qualified server memory running at top bin speeds, prioritizing consistency and platform stability over aggressive timing reductions.
Dual-Rank Matters for Real-World Workloads
Dual-rank modules can offer practical advantages in interleaving and bank-level parallelism. In workloads that continuously stream data—such as virtualization hosts with numerous virtual machines, in-memory caches, or analytics applications—interleaving between ranks can help maintain a steady flow of data to the CPU, mitigating stalls and improving effective bandwidth utilization. The P25706-001’s dual-rank layout lets administrators achieve higher performance per slot compared to many single-rank alternatives at the same capacity, especially when memory channels are fully populated across a server’s CPU sockets.
ECC and Reliability Enhancements
ECC (Error-Correcting Code) memory can detect and correct single-bit errors and detect multi-bit errors. This is essential in 24×7 environments where cosmic rays, electrical noise, and device aging can induce transient bit flips. Combined with platform RAS (Reliability, Availability, Serviceability) features—such as patrol scrubbing, demand scrubbing, and predictive failure analysis—ECC RDIMMs like the P25706-001 contribute to lower failure rates, reduced unplanned downtime, and more predictable system behavior during sustained operation.
Performance
While raw data rate is important, real-world performance emerges from the interaction of CPU memory controllers, NUMA topology, and workload patterns. The following best practices help extract consistent performance from DDR4-3200 RDIMMs.
Populate All Memory Channels
Most server CPUs provide multiple memory channels per socket (commonly six or eight depending on platform generation). Populating every channel with at least one module enables channel interleaving, which spreads requests across channels to increase aggregate bandwidth and smooth queueing effects. Using identical P25706-001 modules across channels simplifies tuning and avoids mixed-speed fallbacks.
Balance Ranks per Channel
Rank interleaving can reduce latency spikes by overlapping operations across ranks. Aim for a consistent number of ranks per channel and per socket. With dual-rank 16GB modules, two DIMMs per channel provide four ranks—a configuration that can offer excellent parallelism on many platforms, subject to speed maintenance guidelines.
BIOS Considerations
Keep system firmware and BIOS/UEFI up to date for the latest memory compatibility tables and stability improvements. Server firmware updates often refine training algorithms, timing margins, and power management routines that affect high-speed DDR4 operation. If a platform supports configurable memory profiles, ensure the memory frequency is set to 3200 MT/s (or the highest stable speed allowed by your population) and that ECC features such as patrol scrubbing are enabled per policy.
Energy Efficiency
DDR4 at 1.2V already represents a significant efficiency gain over earlier generations. In dense configurations, airflow and ambient temperature influence DIMM reliability and longevity. The P25706-001 is engineered for data center duty cycles, but optimal cooling practices help maintain low error rates and consistent performance.
Databases and Analytics
Increase buffer pool sizes and pin hot data in memory. For in-memory analytics engines, ensure even channel utilization and verify NUMA node allocations. The repeatable characteristics of the P25706-001 simplify capacity modeling and scaling plans across clusters.
