M321RAJA0MB2-CCPWF Samsung DDR5 6400MBPS Pc5-51200 RAM
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Samsung DDR5 Server Memory Module Specifications
This high-performance server memory component is engineered for demanding computational environments, offering exceptional reliability and speed for enterprise systems and data centers.
Comprehensive Product Details
Manufacturer and Model Identification
- Brand: Samsung
- Manufacturer Part Code: M321RAJA0MB2-CCPWF
- Product Designation: 128GB DDR5 Synchronous DRAM Component
Technical Attributes and Performance Metrics
Capability and Architecture
- Total Storage Capacity: 128 Gigabytes
- Memory Generation: Double Data Rate 5 (DDR5) SDRAM
- Configuration: Single Module (1 x 128GB)
Speed and Data Transfer Specifications
- Data Rate: 6400 Megatransfers per second (MT/s)
- Classification: DDR5-6400 / PC5-51200
Advanced Reliability Mechanisms
Error Management and Signal Integrity
- Error Correction: ECC (Error Correcting Code)
- Signal Buffering: Registered (Buffered)
Timing and Organizational Features
- CAS Latency: CL52
- Rank Configuration: Dual Rank Architecture
- Operating Voltage: 1.1 Volts
Physical Construction and Dimensions
Module Form Factor and Interface
- Connector Type: 288-pin RDImm
Physical Measurements
- Unit Height: 1.00 inch
- Module Depth: 6.75 inches
Samsung M321RAJA0MB2-CCPWF Memory Kit
The Samsung 128GB DDR5 6400MBPS Pc5-51200 Dual Rank ECC Registered 1.1v CL52 SDRAM 288-pin RDIMM Memory Kit represents the cutting-edge in server memory technology. Designed for enterprise-grade systems, this memory module ensures both high performance and reliability. The Dual Rank configuration optimizes bandwidth and allows servers to achieve maximum throughput, making it ideal for data-intensive workloads such as virtualization, cloud computing, and high-performance computing applications.
Advanced DDR5 Architecture
The DDR5 architecture in the Samsung M321RAJA0MB2-CCPWF memory kit introduces several key improvements over the previous DDR4 generation. Operating at a frequency of 6400MBPS, it offers unprecedented data transfer speeds, which enhances system responsiveness and reduces latency. The DDR5 standard also includes on-die ECC (Error-Correcting Code) support, which complements the registered ECC feature, ensuring superior data integrity across all server operations. This combination of high-speed performance and error correction makes it an essential component for mission-critical applications.
ECC Registered Technology
Error-Correcting Code (ECC) Registered memory is crucial for servers and workstations that require consistent data accuracy. The Samsung M321RAJA0MB2-CCPWF memory kit leverages ECC to detect and correct single-bit errors, preventing data corruption and system crashes. Registered DIMMs (RDIMM) provide an additional layer of signal buffering, reducing electrical load on the memory controller. This architecture allows for greater stability and scalability, enabling IT professionals to deploy large memory configurations without compromising system reliability.
High-Capacity Memory Solutions
With a total capacity of 128GB per module, this Samsung RDIMM memory kit caters to modern servers that demand high memory density. Dual Rank design allows the memory controller to access multiple banks simultaneously, improving multitasking efficiency and supporting complex workloads such as database management, virtualization, and artificial intelligence computations. Organizations leveraging high-density memory configurations can expect smoother performance under heavy server load conditions.
Optimized for Energy Efficiency
The Samsung 128GB DDR5 RDIMM operates at a low voltage of 1.1V, which reduces overall power consumption and thermal output. Compared to previous DDR4 memory modules that typically require 1.2V or higher, this energy-efficient design helps data centers reduce operational costs while maintaining high performance. Lower power consumption also contributes to longer hardware lifespan and enhances sustainability efforts within enterprise IT infrastructures.
Low Latency Performance
The CL52 latency rating of this memory module ensures quick response times, which is critical for real-time computing environments. Low latency contributes to faster access to frequently used data, enabling improved performance for applications that demand rapid memory access. Whether managing large-scale virtual machines or processing high-volume transactions, the low latency characteristics of the Samsung DDR5 RDIMM facilitate smoother and more reliable server operation.
Compatibility and Scalability
The M321RAJA0MB2-CCPWF memory kit is fully compatible with a wide range of modern server platforms that support DDR5 RDIMM memory. IT administrators can easily scale memory capacities to meet growing computational demands without worrying about system incompatibilities. Dual Rank ECC Registered modules ensure that even in high-density memory configurations, data integrity and signal stability remain uncompromised, allowing for seamless upgrades in enterprise environments.
Robust Reliability for Enterprise Applications
Samsung’s commitment to quality and reliability is evident in the M321RAJA0MB2-CCPWF memory kit. Each module undergoes rigorous testing to meet strict industry standards for thermal, electrical, and operational performance. This ensures consistent stability under demanding server workloads. The combination of ECC support, registered architecture, and advanced DDR5 technology makes this memory kit particularly suitable for critical applications such as financial modeling, scientific simulations, and cloud-based services.
Enhanced Server Performance Metrics
By deploying Samsung 128GB DDR5 RDIMM modules, organizations can achieve measurable improvements in server performance metrics. Higher memory bandwidth, reduced latency, and error correction translate to faster processing times and increased uptime. Large-scale enterprise applications benefit from this enhanced performance, enabling IT teams to optimize server utilization and deliver superior computational outcomes across diverse workloads.
Precision Engineering and Build Quality
Samsung memory modules are known for their precision engineering. The 288-pin RDIMM layout, optimized trace design, and high-quality components ensure minimal signal interference and maximum data throughput. This meticulous attention to build quality reduces the risk of hardware failures and enhances the longevity of memory modules within demanding server environments. Every module is designed to meet stringent enterprise requirements for durability and performance.
Integration with Modern Server Architectures
The Samsung M321RAJA0MB2-CCPWF memory kit seamlessly integrates with the latest server architectures, including platforms optimized for high memory throughput and low latency. Its advanced design supports the latest DDR5 memory channels, enabling efficient communication between processors and memory modules. This integration contributes to overall system performance, reducing bottlenecks and ensuring that high-demand applications execute smoothly.
Thermal Management and Operational Stability
Efficient thermal management is critical for maintaining system reliability. The Samsung 128GB DDR5 RDIMM operates with reduced voltage, minimizing heat generation while still providing exceptional performance. This reduces the need for intensive cooling solutions and contributes to stable operations in densely packed server racks. Maintaining optimal thermal conditions ensures long-term reliability and prevents memory-related failures in mission-critical systems.
Data Security and Integrity Features
ECC Registered memory plays a pivotal role in preserving data integrity by detecting and correcting memory errors on the fly. The Samsung DDR5 modules go further by implementing advanced internal error-checking mechanisms, reducing the likelihood of system crashes or data corruption. Enterprises can trust this memory kit to maintain accurate and secure data handling for business-critical workloads.
High-Speed Performance and Bandwidth
The 6400MBPS data transfer rate ensures rapid processing of complex workloads and reduces latency in memory-intensive applications. By delivering a Pc5-51200 performance level, the Samsung M321RAJA0MB2-CCPWF module supports faster read and write operations, making it ideal for large databases, virtualization, and scientific computing tasks. Its Dual Rank architecture enhances memory access efficiency, offering superior performance when handling simultaneous server operations.
Dual Rank ECC Registered Technology
ECC (Error-Correcting Code) Registered memory provides robust protection against data corruption, a critical feature for mission-critical servers. The dual rank configuration allows simultaneous data operations across multiple memory chips, optimizing memory bandwidth utilization and boosting overall system stability. With ECC Registered support, this memory kit ensures high data integrity, reducing the risk of crashes and system errors that can impact enterprise workflows.
Energy-Efficient DDR5 Design
Operating at a low 1.1V, the Samsung DDR5 RDIMM module reduces power consumption while maintaining high performance, enabling data centers to achieve energy efficiency and lower operational costs. DDR5 technology introduces advanced power management features and on-die ECC, allowing precise voltage regulation and minimized thermal footprint. This energy-conscious design is essential for large-scale server deployments where efficiency is as critical as speed.
Ideal Applications for Enterprise and Data Centers
The M321RAJA0MB2-CCPWF memory kit is ideal for a variety of high-demand applications, including virtualization, cloud computing, database management, and AI-driven analytics. Its combination of high bandwidth, energy efficiency, and error-correcting capabilities makes it an essential component for enterprise IT environments. Organizations can confidently deploy this module in mission-critical systems to achieve high performance and uptime.
