Samsung M426R2GA3BB0-CQKOD 16GB 4800MHz PC5-38400 CL46 DDR5 ECC Memory
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High-Performance DDR5 Memory Module
Experience next-generation speed and reliability with Samsung's advanced DDR5 SODIMM memory, engineered for demanding computing environments.
Key Specifications at a Glance
- Capacity: 16GB single module
- Speed Rating: 4800 MT/s (PC5-38400)
- Voltage: Operates at a low 1.1V for energy efficiency
- Form Factor: Compact 262-pin SODIMM design
Manufacturer Details
- Brand: Samsung
- Part Number: M426R2GA3BB0-CQKOD
- Product Title: 16GB DDR5 SODIMM Memory Stick
Advanced Memory Architecture
This module features a single-rank x8 configuration (1Rx8), optimized for high throughput and reduced latency. The CL46 CAS latency ensures swift data access, making it ideal for multitasking and intensive workloads.
Robust Data Integrity
Equipped with ECC (Error-Correcting Code), this memory module actively detects and corrects data corruption, ensuring system stability and protecting mission-critical operations.
DDR5 Over DDR4
- Higher bandwidth for faster data transfer
- Improved power efficiency with lower operating voltage
- Enhanced reliability through built-in ECC support
Ideal Use Cases
- High-performance gaming notebooks
- Data-intensive applications like video editing and 3D rendering
Physical Build and Compatibility
Designed in a 262-pin SODIMM format, this module fits seamlessly into modern motherboards supporting DDR5 technology. Its compact footprint makes it suitable for space-constrained systems without compromising performance.
Technical Highlights
- Single module configuration: 1 x 16GB
- Bus interface: DDR5-4800 / PC5-38400
- Latency: CL46 for responsive performance
Product Overview
The M426R2GA3BB0-CQKOD is a Samsung-manufactured 16GB DDR5 SODIMM ECC memory module engineered for reliability, efficiency, and modern high-performance computing platforms. Marketed to OEMs, system integrators, and IT professionals who require compact form-factor memory with server-class error correction, this module combines the higher bandwidth of DDR5 (4800MT/s), a PC5-38400 transfer rate, and ECC (Error-Correcting Code) functionality in a 262-pin SODIMM package. With a single-rank 1Rx8 organization and a nominal operating voltage of 1.1V, it's optimized for low-power, high-stability applications such as ultra-compact servers, edge computing devices, workstation-grade industrial systems that demand continuous uptime.
Choose ECC SODIMM DDR5 for Modern Systems
ECC (Error-Correcting Code) memory corrects single-bit errors and detects multi-bit errors to prevent data corruption. For mission-critical workloads — databases, virtualization hosts, scientific computing, and financial systems — ECC memory reduces the risk of silent data corruption which can lead to application crashes or compromised results. The M426R2GA3BB0-CQKOD module provides ECC-level reliability in a SODIMM form factor, addressing use-cases where full-sized DIMMs aren’t feasible.
DDR5 Advantages Over DDR4
- Higher bandwidth: 4800MT/s baseline for DDR5 increases throughput for memory-bound applications.
- Improved power efficiency: Lower 1.1V operating voltage reduces power draw compared to DDR4 modules with higher voltages.
- On-die ECC: DDR5 integrates on-die ECC to improve internal DRAM reliability; combined with module ECC, you get a two-tier reliability approach.
- Higher density potential: DDR5 supports greater per-module capacities in future generations, making upgrades easier.
Detailed Technical Breakdown
Module Organization and Ranks
The designation 1Rx8 indicates a single-rank module with x8 DRAM devices. Single-rank SODIMMs often provide better compatibility with certain mobile and compact platforms, reduce signal loading on the memory bus, and can improve compatibility with some memory controllers. For users comparing single-rank and dual-rank modules, the single-rank M426R2GA3BB0-CQKOD is often preferred where platform constraints or BIOS support are limited.
1Rx8 means for performance
Single-rank modules may sometimes achieve slightly higher frequencies or more stable operation at a given voltage on some controllers. The x8 device width means each DRAM chip is organized to deliver 8 bits per access lane — a common configuration for server and industrial-grade components.
Timing and Latency — CL46 Explained
CAS Latency (CL) 46 at DDR5-4800 defines the number of clock cycles between a column address being sent to the memory and the data being available. While CL46 appears larger compared to many DDR4 numbers, absolute latency must be evaluated in the context of DDR5’s doubled prefetch and higher clock rate. In practice, DDR5-4800 CL46 delivers equal or better real-world performance than many DDR4 modules at lower MT/s with smaller CL due to the increased data rate.
Power and Thermal Characteristics
Operating at 1.1V, this Samsung module reduces energy consumption compared to older DDR standards and helps thermal budgets in compact systems. Lower voltage also benefits battery-backed devices and dense server nodes where cumulative heat from multiple modules matters. Keep airflow and chassis ventilation in mind; SODIMM slots are often nearer to other heat sources.
Compatibility and Use Cases
Compatible Systems
This module targets systems that explicitly support DDR5 SODIMM and ECC functionality — for example:
- Compact servers and micro-servers using SODIMM memory slots
- Edge computing nodes and specialized appliances where space is constrained
Comparisons
Against DDR5 Non-ECC SODIMM
Non-ECC DDR5 SODIMM typically targets consumer gaming notebooks. While non-ECC may be a fraction cheaper, you lose the data integrity that ECC provides. For mission-critical or professional environments, ECC SODIMM like the Samsung model is usually the safer choice.
Against DDR4 ECC SODIMM
Compared to DDR4 ECC, DDR5 SODIMM delivers higher bandwidth and better power-efficiency. Upgrading from DDR4 ECC to DDR5 ECC requires platform support (newer CPU/motherboard generations), but for new builds, DDR5 provides a longer performance runway.
Price vs Value Considerations
ECC modules often cost more than non-ECC equivalents. Evaluate the value in terms of reduced downtime, protection against silent data corruption, and longer-term system resilience. For servers and critical workstations, the incremental cost is commonly justified by the mitigated risk.
