Samsung M426R2GA3BB0-CQKOL 16GB 4800MHz DDR5 SDRAM 262-Pin PC5-38400 CL46 ECC Memory

Samsung 16GB DDR5 Memory Modules

Discover the high-performance Samsung M426R2GA3BB0-CQKOL 16GB PC5-38400 DDR5-4800Mbps 1Rx8 memory module designed for speed, reliability, and efficiency in modern computing systems.

General Information

• Brand: Samsung
• Part Number: M426R2GA3BB0-CQKOL
• Product Name: 16GB Ddr5 Sdram Memory Module

Technical Specifications

Storage Capacity

• 16GB of advanced memory storage

Memory Technology

• DDR5 SDRAM for next-generation performance

Module Configuration

• Single module: 1 x 16GB

Bus Speed

• 4800Mbps DDR5-4800 / PC5-38400

Data Integrity

• Error-Correcting Code (ECC) support for reliable data processing

Latency Timings

• CAS Latency: CL46 for optimized responsiveness

Rank Features

• 1Rx8 architecture for efficient memory handling

M426R2GA3BB0-CQKOL DDR5 Memory Modules Overview

The Samsung M426R2GA3BB0-CQKOL 16GB PC5-38400 DDR5-4800Mbps 1Rx8 Memory belongs to a specialized category of high-performance system memory modules engineered for contemporary computing environments that demand stability, bandwidth efficiency, and long-term reliability. This category focuses on DDR5 SDRAM modules designed to support next-generation processors and chipsets in enterprise servers, professional workstations, and advanced desktop platforms. As computing workloads evolve toward higher core counts, larger datasets, and real-time processing requirements, DDR5 memory technology represents a foundational upgrade over previous DDR4 standards.

Within this category, emphasis is placed on JEDEC-compliant specifications, consistent signal integrity, and optimized power delivery. The Samsung M426R2GA3BB0-CQKOL module exemplifies these characteristics through its 4800Mbps data rate, PC5-38400 bandwidth rating, and single-rank 1Rx8 architecture. These features collectively position the module as a dependable choice for systems that prioritize balanced performance and compatibility across a wide range of platforms.

DDR5 Architecture and Bandwidth

DDR5 memory represents a significant architectural advancement compared to earlier DDR generations. Modules in this category, including the Samsung M426R2GA3BB0-CQKOL, are designed with a dual 32-bit channel architecture per DIMM, enabling more efficient data access and improved concurrency. This structural evolution allows memory controllers to handle multiple operations simultaneously, reducing latency under heavy workloads and improving overall system responsiveness.

The PC5-38400 classification denotes a theoretical peak bandwidth of 38.4GB/s per module, a substantial improvement that supports data-intensive applications such as virtualization, scientific modeling, content creation, and enterprise database management. Memory modules in this category are built to sustain this throughput while maintaining signal stability and error-free operation under continuous use.

Module Density and 16GB Capacity Applications

The 16GB capacity segment within the DDR5 memory category addresses a broad spectrum of professional and commercial computing needs. Modules such as the Samsung M426R2GA3BB0-CQKOL are frequently deployed as building blocks in scalable memory configurations, allowing system integrators to populate multiple DIMM slots to reach higher total capacities while maintaining balanced channel distribution.

A single 16GB DDR5 module provides sufficient headroom for modern operating systems, enterprise applications, and multitasking workloads. In multi-module configurations, this capacity tier supports advanced use cases such as virtualization hosts, software development environments, and data analysis platforms, where memory availability directly impacts performance and efficiency.

Single-Rank 1Rx8 Design Considerations

The 1Rx8 architecture indicates a single-rank memory module composed of x8 DRAM components. This design choice plays a critical role in signal integrity, memory controller compatibility, and thermal management. Within this category, single-rank modules are often favored for their predictable electrical characteristics and ease of integration into a wide range of system designs.

The Samsung M426R2GA3BB0-CQKOL module utilizes this architecture to deliver consistent performance while minimizing electrical load on the memory controller. This approach supports stable operation at the DDR5-4800 speed grade and aligns with platform guidelines established by CPU and chipset manufacturers.

JEDEC Compliance and Platform Compatibility

A defining characteristic of this memory category is strict adherence to JEDEC standards. JEDEC compliance ensures that modules such as the Samsung M426R2GA3BB0-CQKOL operate within defined voltage, timing, and signaling parameters, enabling seamless compatibility across supported platforms. This compliance is essential for enterprise and OEM environments where non-standard memory behavior can lead to system instability or certification issues.

DDR5 modules in this category typically operate at a nominal voltage of 1.1V, contributing to improved power efficiency compared to previous generations. The integrated power management IC, or PMIC, on the module further refines voltage regulation, reducing noise and improving overall electrical stability. These features collectively support long-term reliability in continuous-operation scenarios.

Reliability and Manufacturing Quality Standards

Memory reliability is a central focus within this category, particularly for modules intended for professional and enterprise use. Samsung’s manufacturing processes emphasize rigorous testing, binning, and quality assurance to ensure that each module meets stringent performance and durability criteria. The M426R2GA3BB0-CQKOL module reflects this commitment through its validated operating characteristics and consistent production quality.

Modules in this category are designed to withstand extended operational periods, thermal cycling, and varying workload intensities. This reliability is essential for systems that operate continuously or support mission-critical applications where memory errors or failures can have significant consequences.

Scalability and Future-Proofing Considerations

Scalability is a key advantage of DDR5 memory modules within this category. The 16GB capacity tier allows systems to scale memory incrementally as requirements grow, providing flexibility for future upgrades. The Samsung M426R2GA3BB0-CQKOL module can be deployed in matched configurations to maintain balanced channel utilization and optimal performance.

Future-proofing is further enhanced by DDR5’s support for higher densities and faster speeds as the technology matures. Systems built with DDR5-4800 memory establish a foundation that can accommodate future processor generations and evolving software demands without requiring immediate memory architecture changes.

Signal Integrity and Data Accuracy Enhancements

DDR5 memory introduces several improvements aimed at enhancing signal integrity and data accuracy. Modules in this category benefit from features such as decision feedback equalization and improved training algorithms, which help maintain stable communication between the memory module and the controller at high data rates.

The Samsung M426R2GA3BB0-CQKOL module incorporates these enhancements as part of its JEDEC-compliant design, ensuring reliable data transmission even under demanding workloads. This focus on signal integrity is particularly important in environments where memory errors can impact application performance or data consistency.